Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films.
Ontology highlight
ABSTRACT:
SUBMITTER: Zhang D
PROVIDER: S-EPMC6199022 | biostudies-literature |
REPOSITORIES: biostudies-literature
Similar Datasets
Project description:The hysteretic insulator-to-metal transition of VO2 is studied in detail for pulsed laser deposition grown thin films on TiO2 substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the resistive transition in these films occurs close to room temperature. Multiple, stable resistance states can be set controllably in the temperature range of the hysteretic phase transition by tailored temperature sweeps or by Joule heating induced by current pulses.
| S-EPMC7040009 | biostudies-literature
Project description:Vanadium dioxide (VO2) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor-metal transition. Its study is notoriously challenging due to the interplay of long- and short-range elastic distortions, as well as the symmetry change and the electronic structure changes. The inherent coupling of lattice and electronic degrees of freedom opens the avenue toward mechanical actuation of single domains. In this work, we show that we can manipulate and monitor the reversible semiconductor-to-metal transition of VO2 while applying a controlled amount of mechanical pressure by a nanosized metallic probe using an atomic force microscope. At a critical pressure, we can reversibly actuate the phase transition with a large modulation of the conductivity. Direct tunneling through the VO2-metal contact is observed as the main charge carrier injection mechanism before and after the phase transition of VO2. The tunneling barrier is formed by a very thin but persistently insulating surface layer of the VO2. The necessary pressure to induce the transition decreases with temperature. In addition, we measured the phase coexistence line in a hitherto unexplored regime. Our study provides valuable information on pressure-induced electronic modifications of the VO2 properties, as well as on nanoscale metal-oxide contacts, which can help in the future design of oxide electronics.
| S-EPMC9798830 | biostudies-literature
Project description:Fenestration elements that enable spectrally selective dynamic modulation of the near-infrared region of the electromagnetic spectrum are of great interest as a means of decreasing the energy consumption of buildings by adjusting solar heat gain in response to external temperature. The binary vanadium oxide VO2 exhibits a near-room-temperature insulator-metal electronic transition accompanied by a dramatic modulation of the near-infrared transmittance. The low-temperature insulating phase is infrared transparent but blocks infrared transmission upon metallization. There is considerable interest in harnessing the thermochromic modulation afforded by VO2 in nanocomposite thin films. However, to prepare a viable thermochromic film, the visible-light transmittance must be maintained as high as possible while maximizing thermochromic modulation in the near-infrared region of the electromagnetic spectrum, which necessitates the development of high-crystalline-quality VO2 nanocrystals of the optimal particle size embedded within the appropriate host matrix and refractive index matched to the host medium. Here, we demonstrate the preparation of acrylate-based nanocomposite thin films with varying sizes of embedded VO2 nanoparticles. The observed strong size dependence of visible-light transmittance and near-infrared modulation is explicable on the basis of optical simulations. In this article, we elucidate multiple scattering and absorption mechanisms, including Mie scattering, temperature-/phase-variant refractive-index mismatch between VO2 nanocrystals and the encapsulating matrix, and the appearance of a surface plasmon resonance using temperature-variant absorptance and diffuse transmittance spectroscopy measurements performed as a function of particle loading for the different sizes of VO2 nanocrystals. Nanocrystals with dimensions of 44 ± 30 nm show up to >32% near-infrared energy modulation across the near-infrared region of the electromagnetic spectrum while maintaining high visible-light transmission. The results presented here, providing mechanistic elucidation of the size dependence of the different scattering mechanisms, underscore the importance of nanocrystallite dimensions, refractive-index matching, and individualized dispersion of particles within the host matrix for the preparation of viable thermochromic thin films mitigating Mie scattering and differential refractive-index scattering.
| S-EPMC6644338 | biostudies-literature
Project description:Impurities can be incorporated during thin film deposition, but also can originate from atmosphere exposure. As impurities can strongly affect the composition-structure-property relations in magnetron sputter deposited thin films, it is important to distinguish between both incorporation channels. Therefore, the impurity incorporation by atmosphere exposure into sputtered Mg, Al, and Ca thin films is systematically studied by a variation of the deposition temperatures and atmosphere exposure times. Deposition temperature variation results in morphological modifications explained by considering surface and bulk diffusion as well as grain boundary motion and evaporation. The film morphologies exhibiting the lowest oxygen concentrations, as measured by energy dispersive X-ray spectroscopy, are obtained at a homologous temperature of 0.4 for both Mg and Al thin films. For Ca, preventing atmosphere exposure is essential to hinder impurity incorporation: By comparing the impurity concentration in Al-capped and uncapped thin films, it is demonstrated that Ca thin films are locally protected by Al-capping, while Mg (and Al) form native passivation layers. Furthermore, it can be learned that the capping (or self-passivation) efficiency in terms of hindering further oxidation of the films in atmosphere is strongly dependent on the underlying morphology, which in turn is defined by the growth temperature.
| S-EPMC9822154 | biostudies-literature
Project description:Reversible insulator-metal transition (IMT) and structure phase change in vanadium dioxide (VO2) remain vital and challenging with complex polymorphs. It is always essential to understand the polymorphs that coexist in desired VO2 materials and their IMT behaviors. Different electrical properties and lattice alignments in VO2 (M) and VO2 (B) phases have enabled the creation of versatile functional devices. Here, we present polymorphous VO2 thin films with coexistent VO2 (M) and VO2 (B) phases and phase-dependent IMT behaviors. The presence of VO2 (B) phases may induce lattice distortions in VO2 (M). The plane spacing of (011)M in the VO2 (M) phase becomes widened, and the V-V and V-O vibrations shift when more VO2 (B) phase exists in the VO2 (M) matrix. Significantly, the coexisting VO2 (B) phases promote the IMT temperature of the polymorphous VO2 thin films. We expect that such coexistent polymorphs and IMT variations would help us to understand the microstructures and IMT in the desired VO2 materials and contribute to advanced electronic transistors and optoelectronic devices.
| S-EPMC10180398 | biostudies-literature
Project description:The appearance of thin film metallic glasses (TFMGs) is gaining increasing interest because of their unique mechanical and anticorrosion properties and potential engineering applications. In this study, Cu-Zr-Al ternary thin film metallic glasses were fabricated by using DC magnetron sputtering equipment with various target powers. The evolution of the structure was systematically investigated by grazing incidence X-ray diffractometer, scanning electron microscopy, and transmission electron microscopy. The deposition rate increases with the increasing of applied target power. The as-deposited thin films show an amorphous structure. The compositional fluctuations on the nanometer scale indicate the presence of two Cu- and Zr-rich amorphous phases. The electrochemical corrosion measurements indicated that Cu-Zr-Al thin film metallic glasses had good corrosion resistance in the sulfuric acid solution. Nanoindentation results showed that the mechanical deformation was found to be homogenous and reproducible with a high value range for the hardness and modulus.
| S-EPMC6947152 | biostudies-literature
Project description:The fabrication of a Fe-based coated conductor (CC) becomes possible when Fe(Se,Te) is grown as an epitaxial film on a metallic oriented substrate. Thanks to the material's low structural anisotropy, less strict requirements on the template microstructure allow for the design of a simplified CC architecture with respect to the REBCO multi-layered layout. This design, though, still requires a buffer layer to promote the oriented growth of the superconducting film and avoid diffusion from the metallic template. In this work, Fe(Se,Te) films are grown on chemically-deposited, CeO2-based buffer layers via pulsed laser deposition, and excellent properties are obtained when a Fe(Se,Te) seed layer is used. Among all the employed characterization techniques, transmission electron microscopy proved essential to determine the actual effect of the seed layer on the final film properties. Also, systematic investigation of the full current transport properties J(θ, H, T) is carried out: Fe(Se,Te) samples are obtained with sharp superconducting transitions around 16 K and critical current densities exceeding 1 MA cm-2 at 4.2 K in self-field. The in-field and angular behavior of the sample are in line with data from the literature. These results are the demonstration of the feasibility of a Fe-based CC, with all the relative advantages concerning process simplification and cost reduction.
| S-EPMC9834258 | biostudies-literature
Project description:Hysteresis loops exhibited by the thermophysical properties of VO2 thin films deposited on either a sapphire or silicon substrate have been experimentally measured using a high frequency photothermal radiometry technique. This is achieved by directly measuring the thermal diffusivity and thermal effusivity of the VO2 films during their heating and cooling across their phase transitions, along with the film-substrate interface thermal boundary resistance. These thermal properties are then used to determine the thermal conductivity and volumetric heat capacity of the VO2 films. A 2.5 enhancement of the VO2 thermal conductivity is observed during the heating process, while its volumetric heat capacity does not show major changes. This sizeable thermal conductivity variation is used to model the operation of a conductive thermal diode, which exhibits a rectification factor about 30% for small temperature differences (≈70 °C) on its terminals. The obtained results grasp thus new insights on the control of heat currents.
| S-EPMC6584564 | biostudies-literature
Project description:Structural and morphological modulation of rf-sputtered BiVO4 thin films deposited using mechanochemical synthesis prepared BiVO4 nano-powders as sintered target are included in this data article. The crystalline nature of as-prepared films, namely amorphous and crystalline was acquired with time and temperature dependent in-situ high temperature X-ray diffraction (HT-XRD), at a time interval of 1 h. Typical Fourier transform infrared (FT-IR) spectra of annealed thin film of monoclinic BiVO4 structure is given. Furthermore, correlation between morphologies of various substrate temperature fabricated BiVO4 thin films are presented.
| S-EPMC5988375 | biostudies-literature
Project description:A thin-film materials library in the system V-Bi-O was fabricated by reactive co-sputtering. The composition of Bi relative to V was determined by Rutherford backscattering spectroscopy, ranging from 0.06 to 0.84 at% along the library. The VO2 phase M1 was detected by X-ray diffraction over the whole library, however a second phase was observed in the microstructure of films with Bi contents > 0.29 at%. The second phase was determined by electron diffraction to be BiVO4, which suggests that the solubility limit of Bi in VO2 is only ∼0.29 at%. For Bi contents from 0.08 to 0.29 at%, the phase transformation temperatures of VO2:Bi increase from 74.7 to 76.4 °C by 8 K per at% Bi. With X-ray photoemission spectroscopy, the oxidation state of Bi was determined to be 3+. The V5+/V4+ ratio increases with increasing Bi content from 0.10 to 0.84 at%. The similarly increasing tendency of the V5+/V4+ ratio and T c with Bi content suggests that although the ionic radius of Bi3+ is much larger than that of V4+, the charge doping effect and the resulting V5+ are more prominent in regulating the phase transformation behavior of Bi-doped VO2.
| S-EPMC8694945 | biostudies-literature