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Tribotronic bipolar junction transistor for mechanical frequency monitoring and use as touch switch.


ABSTRACT: Tribotronics, a new field that involves the coupling of triboelectricity and semiconductors, has attracted great interest in the nanoenergy and nanoelectronics domains. This paper proposes a tribotronic bipolar junction transistor (TBJT) that incorporates a bipolar junction transistor and a triboelectric nanogenerator (TENG) in the single-electrode mode. When the mobile triboelectric layer slides on the device surface for electrification, a bias voltage is created and applied to the emitter junction, and then the base current from the TENG is amplified. Based on the fabricated TBJT, a mechanical frequency monitoring sensor with high sensitivity and excellent stability and a finger-triggered touch switch were developed. This work demonstrated for the first time a tribotronic device with simultaneously controlled voltage and current voltage/current simultaneously controlled tribotronic device, which has promising potential applications in micro/nano-sensors, human-machine interactions, intelligent instrumentation, wearable electronics, and other applications.

SUBMITTER: Xi F 

PROVIDER: S-EPMC6220156 | biostudies-literature | 2018

REPOSITORIES: biostudies-literature

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Tribotronic bipolar junction transistor for mechanical frequency monitoring and use as touch switch.

Xi Fengben F   Pang Yaokun Y   Li Wenjian W   Bu Tianzhao T   Zhao Junqing J   Liu Guoxu G   Guo Tong T   Liu Wenbo W   Zhang Chi C  

Microsystems & nanoengineering 20181105


Tribotronics, a new field that involves the coupling of triboelectricity and semiconductors, has attracted great interest in the nanoenergy and nanoelectronics domains. This paper proposes a tribotronic bipolar junction transistor (TBJT) that incorporates a bipolar junction transistor and a triboelectric nanogenerator (TENG) in the single-electrode mode. When the mobile triboelectric layer slides on the device surface for electrification, a bias voltage is created and applied to the emitter junc  ...[more]

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