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Breakdown-induced conductive channel for III-nitride light-emitting devices.

ABSTRACT: III-nitride semiconductor-based light-emitting diodes (LEDs) have superior physical properties_, such as high thermal stability and brightness, for application to solid-state lighting sources. With the commercialization of GaN-based LEDs, improving LED reliability is important because they can be affected by electrostatic discharge, reverse leakage, and breakdown. However, research on the reverse bias characteristics of GaN-based LEDs is insufficient. We studied the reverse breakdown mechanism and demonstrated that a local breakdown can form a conductive channel in GaN-based LEDs, which can be expanded to a novel planar-type LED structure without an n-contact electrode. Furthermore, we found that this approach can be applied to AC-controllable light-emitting devices without any AC-DC converter.

SUBMITTER: Han SH

PROVIDER: S-EPMC6224508 | biostudies-literature | 2018 Nov

REPOSITORIES: biostudies-literature

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Breakdown-induced conductive channel for III-nitride light-emitting devices.

Han Sang-Hyun SH Baek Seung-Hye SH Lee Hyun-Jin HJ Kim Hyunsoo H Lee Sung-Nam SN

Scientific reports 20181108 1

III-nitride semiconductor-based light-emitting diodes (LEDs) have superior physical properties<sub>,</sub> such as high thermal stability and brightness, for application to solid-state lighting sources. With the commercialization of GaN-based LEDs, improving LED reliability is important because they can be affected by electrostatic discharge, reverse leakage, and breakdown. However, research on the reverse bias characteristics of GaN-based LEDs is insufficient. We studied the reverse breakdown m ...[more]

PMID: 30410097

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