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Controlled Synthesis of Atomically Layered Hexagonal Boron Nitride via Chemical Vapor Deposition.

ABSTRACT: Hexagonal boron nitrite (h-BN) is an attractive material for many applications including electronics as a complement to graphene, anti-oxidation coatings, light emitters, etc. However, the synthesis of high-quality h-BN is still a great challenge. In this work, via controlled chemical vapor deposition, we demonstrate the synthesis of h-BN films with a controlled thickness down to atomic layers. The quality of as-grown h-BN is confirmed by complementary characterizations including high-resolution transition electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray photo-electron spectroscopy. This work will pave the way for production of large-scale and high-quality h-BN and its applications as well.

SUBMITTER: Liu J

PROVIDER: S-EPMC6274273 | biostudies-literature | 2016 Nov

REPOSITORIES: biostudies-literature

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Controlled Synthesis of Atomically Layered Hexagonal Boron Nitride via Chemical Vapor Deposition.

Liu Juanjuan J Kutty R Govindan RG Liu Zheng Z

Molecules (Basel, Switzerland) 20161129 12

Hexagonal boron nitrite (h-BN) is an attractive material for many applications including electronics as a complement to graphene, anti-oxidation coatings, light emitters, etc. However, the synthesis of high-quality h-BN is still a great challenge. In this work, via controlled chemical vapor deposition, we demonstrate the synthesis of h-BN films with a controlled thickness down to atomic layers. The quality of as-grown h-BN is confirmed by complementary characterizations including high-resolution ...[more]

PMID: 27916851

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Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition.

Project description:To grow precisely aligned graphene on h-BN without metal catalyst is extremely important, which allows for intriguing physical properties and devices of graphene/h-BN hetero-structure to be studied in a controllable manner. In this report, such hetero-structures were fabricated and investigated by atomic resolution scanning probe microscopy. Moiré patterns are observed and the sensitivity of moiré interferometry proves that the graphene grains can align precisely with the underlying h-BN lattice within an error of less than 0.05°. The occurrence of moiré pattern clearly indicates that the graphene locks into h-BN via van der Waals epitaxy with its interfacial stress greatly released. It is worthy to note that the edges of the graphene grains are primarily oriented along the armchair direction. The field effect mobility in such graphene flakes exceeds 20,000 cm(2)·V(-1)·s(-1) at ambient condition. This work opens the door of atomic engineering of graphene on h-BN, and sheds light on fundamental research as well as electronic applications based on graphene/h-BN hetero-structure.

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In Situ Observations during Chemical Vapor Deposition of Hexagonal Boron Nitride on Polycrystalline Copper.

Project description:Using a combination of complementary in situ X-ray photoelectron spectroscopy and X-ray diffraction, we study the fundamental mechanisms underlying the chemical vapor deposition (CVD) of hexagonal boron nitride (h-BN) on polycrystalline Cu. The nucleation and growth of h-BN layers is found to occur isothermally, i.e., at constant elevated temperature, on the Cu surface during exposure to borazine. A Cu lattice expansion during borazine exposure and B precipitation from Cu upon cooling highlight that B is incorporated into the Cu bulk, i.e., that growth is not just surface-mediated. On this basis we suggest that B is taken up in the Cu catalyst while N is not (by relative amounts), indicating element-specific feeding mechanisms including the bulk of the catalyst. We further show that oxygen intercalation readily occurs under as-grown h-BN during ambient air exposure, as is common in further processing, and that this negatively affects the stability of h-BN on the catalyst. For extended air exposure Cu oxidation is observed, and upon re-heating in vacuum an oxygen-mediated disintegration of the h-BN film via volatile boron oxides occurs. Importantly, this disintegration is catalyst mediated, i.e., occurs at the catalyst/h-BN interface and depends on the level of oxygen fed to this interface. In turn, however, deliberate feeding of oxygen during h-BN deposition can positively affect control over film morphology. We discuss the implications of these observations in the context of corrosion protection and relate them to challenges in process integration and heterostructure CVD.

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Atomically-Precise Texturing of Hexagonal Boron Nitride Nanostripes.

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Project description:Boron nitride (BN) aerogels are porous materials with a continuous three-dimensional network structure. They are attracting increasing attention for a wide range of applications. Here, we report the template-assisted synthesis of BN aerogels by catalyst-free, low-pressure chemical vapor deposition on graphene-carbon nanotube composite aerogels using borazine as the B and N sources with a relatively low temperature of 900?(°)C. The three-dimensional structure of the BN aerogels was achieved through the structural design of carbon aerogel templates. The BN aerogels have an ultrahigh specific surface area, ultralow density, excellent oil absorbing ability, and high temperature oxidation resistance. The specific surface area of BN aerogels can reach up to 1051?m(2) g(-1), 2-3 times larger than the reported BN aerogels. The mass density can be as low as 0.6?mg cm(-3), much lower than that of air. The BN aerogels exhibit high hydrophobic properties and can absorb up to 160 times their weight in oil. This is much higher than porous BN nanosheets reported previously. The BN aerogels can be restored for reuse after oil absorption simply by burning them in air. This is because of their high temperature oxidation resistance and suggests broad utility as water treatment tools.

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Introducing Overlapping Grain Boundaries in Chemical Vapor Deposited Hexagonal Boron Nitride Monolayer Films.

Project description:We demonstrate the growth of overlapping grain boundaries in continuous, polycrystalline hexagonal boron nitride (h-BN) monolayer films via scalable catalytic chemical vapor deposition. Unlike the commonly reported atomically stitched grain boundaries, these overlapping grain boundaries do not consist of defect lines within the monolayer films but are composed of self-sealing bilayer regions of limited width. We characterize this overlapping h-BN grain boundary structure in detail by complementary (scanning) transmission electron microscopy techniques and propose a catalytic growth mechanism linked to the subsurface/bulk of the process catalyst and its boron and nitrogen solubilities. Our data suggest that the overlapping grain boundaries are comparatively resilient against deleterious pinhole formation associated with grain boundary defect lines and thus may reduce detrimental breakdown effects when polycrystalline h-BN monolayer films are used as ultrathin dielectrics, barrier layers, or separation membranes.

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Enhanced tunnel spin injection into graphene using chemical vapor deposited hexagonal boron nitride.

Project description:The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic architectures through demonstrations of ultrahigh electron mobilities and charge-based tunnel transistors. Here, we expand the functional horizon of such 2D materials demonstrating the quantum tunneling of spin polarized electrons through atomic planes of CVD grown h-BN. We report excellent tunneling behavior of h-BN layers together with tunnel spin injection and transport in graphene using ferromagnet/h-BN contacts. Employing h-BN tunnel contacts, we observe enhancements in both spin signal amplitude and lifetime by an order of magnitude. We demonstrate spin transport and precession over micrometer-scale distances with spin lifetime up to 0.46 nanosecond. Our results and complementary magnetoresistance calculations illustrate that CVD h-BN tunnel barrier provides a reliable, reproducible and alternative approach to address the conductivity mismatch problem for spin injection into graphene.

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Opening of triangular hole in triangular-shaped chemical vapor deposited hexagonal boron nitride crystal.

Project description:In-plane heterostructure of monolayer hexagonal boron nitride (h-BN) and graphene is of great interest for its tunable bandgap and other unique properties. Here, we reveal a H2-induced etching process to introduce triangular hole in triangular-shaped chemical vapor deposited individual h-BN crystal. In this study, we synthesized regular triangular-shaped h-BN crystals with the sizes around 2-10 ?m on Cu foil by chemical vapor deposition (CVD). The etching behavior of individual h-BN crystal was investigated by annealing at different temperature in an H2:Ar atmosphere. Annealing at 900 °C, etching of h-BN was observed from crystal edges with no visible etching at the center of individual crystals. While, annealing at a temperature ? 950 °C, highly anisotropic etching was observed, where the etched areas were equilateral triangle-shaped with same orientation as that of original h-BN crystal. The etching process and well-defined triangular hole formation can be significant platform to fabricate planar heterostructure with graphene or other two-dimensional (2D) materials.

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Chemical Vapor Deposition of Highly Conjugated, Transparent Boron Carbon Nitride Thin Films.

Project description:Ternary materials made up only from the lightweight elements boron, carbon, and nitrogen are very attractive due to their tunable properties that can be obtained by changing the relative elemental composition. However, most of the times, the synthesis requires to use up to three different precursor and very high temperatures for the synthesis. Moreover, the low reciprocal solubility of boron nitride and graphene often leads to BN-C composite materials due to phase segregation. Herein, an innovative method is presented to prepare BCN thin films by chemical vapor deposition from a single source precursor, melamine diborate. The deposition occurs homogenously at relatively low temperatures generating very high degree of sp2 conjugation. The as-prepared thin films possess high transparency and refractive index values in the visible range that are of interest for reflective mirrors and lenses. Furthermore, they are wide-bandgap semiconductor with very positive valence band, making these materials very stable against oxidation of interest as protective coating and charge transport layer for solar cells. The simple chemical vapor deposition method that relies on commonly available and low-hazard precursor can open the way for application of BCN thin films in optics, optoelectronics, and beyond.

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Wafer-scale and selective-area growth of high-quality hexagonal boron nitride on Ni(111) by metal-organic chemical vapor deposition.

Project description:We demonstrate wafer-scale growth of high-quality hexagonal boron nitride (h-BN) film on Ni(111) template using metal-organic chemical vapor deposition (MOCVD). Compared with inert sapphire substrate, the catalytic Ni(111) template facilitates a fast growth of high-quality h-BN film at the relatively low temperature of 1000 °C. Wafer-scale growth of a high-quality h-BN film with Raman E2g peak full width at half maximum (FWHM) of 18~24 cm-1 is achieved, which is to the extent of our knowledge the best reported for MOCVD. Systematic investigation of the microstructural and chemical characteristics of the MOCVD-grown h-BN films reveals a substantial difference in catalytic capability between the Ni(111) and sapphire surfaces that enables the selective-area growth of h-BN at pre-defined locations over a whole 2-inch wafer. These achievement and findings have advanced our understanding of the growth mechanism of h-BN by MOCVD and will contribute an important step toward scalable and controllable production of high-quality h-BN films for practical integrated two-dimensional materials-based systems and devices.

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