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From CsPbBr3 Nano-Inks to Sintered CsPbBr3-CsPb2Br5 Films via Thermal Annealing: Implications on Optoelectronic Properties.


ABSTRACT: CsPbBr3 nanocrystals passivated with short molecular ligands and deposited on a substrate were annealed from room temperature to 400 °C in inert atmosphere. Chemical, structural, and morphological transformations were monitored in situ and ex situ by different techniques, while optoelectronic properties of the film were also assessed. Annealing at 100 °C resulted in a 1 order of magnitude increase in photocurrent and photoresponse as a result of partial sintering of the NCs and residual solvent evaporation. Beyond 150 °C the original orthorhombic NCs were partially transformed into tetragonal CsPb2Br5 crystals, due to the desorption of weakly bound propionic acid ligands. The photocurrent increased moderately until 300 °C although the photoresponse became slower as a result of the formation of surface trap states. Eventually, annealing beyond 350 °C removed the strongly bound butylamine ligands and reversed the transition to the original orthorhombic phase, with a loss of photocurrent due to the numerous defects induced by the stripping of the passivating butylamine.

SUBMITTER: Palazon F 

PROVIDER: S-EPMC6284206 | biostudies-literature | 2017 Jun

REPOSITORIES: biostudies-literature

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From CsPbBr<sub>3</sub> Nano-Inks to Sintered CsPbBr<sub>3</sub>-CsPb<sub>2</sub>Br<sub>5</sub> Films via Thermal Annealing: Implications on Optoelectronic Properties.

Palazon Francisco F   Dogan Sedat S   Marras Sergio S   Locardi Federico F   Nelli Ilaria I   Rastogi Prachi P   Ferretti Maurizio M   Prato Mirko M   Krahne Roman R   Manna Liberato L  

The journal of physical chemistry. C, Nanomaterials and interfaces 20170503 21


CsPbBr<sub>3</sub> nanocrystals passivated with short molecular ligands and deposited on a substrate were annealed from room temperature to 400 °C in inert atmosphere. Chemical, structural, and morphological transformations were monitored <i>in situ</i> and <i>ex situ</i> by different techniques, while optoelectronic properties of the film were also assessed. Annealing at 100 °C resulted in a 1 order of magnitude increase in photocurrent and photoresponse as a result of partial sintering of the  ...[more]

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