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High-temperature operation of a silicon qubit.

ABSTRACT: This study alleviates the low operating temperature constraint of Si qubits. A qubit is a key element for quantum sensors, memories, and computers. Electron spin in Si is a promising qubit, as it allows both long coherence times and potential compatibility with current silicon technology. Si qubits have been implemented using gate-defined quantum dots or shallow impurities. However, operation of Si qubits has been restricted to milli-Kelvin temperatures, thus limiting the application of the quantum technology. In this study, we addressed a single deep impurity, having strong electron confinement of up to 0.3?eV, using single-electron tunnelling transport. We also achieved qubit operation at 5-10?K through a spin-blockade effect based on the tunnelling transport via two impurities. The deep impurity was implemented by tunnel field-effect transistors (TFETs) instead of conventional FETs. With further improvement in fabrication and controllability, this work presents the possibility of operating silicon spin qubits at elevated temperatures.

SUBMITTER: Ono K

PROVIDER: S-EPMC6346053 | biostudies-literature | 2019 Jan

REPOSITORIES: biostudies-literature

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High-temperature operation of a silicon qubit.

Ono Keiji K Mori Takahiro T Moriyama Satoshi S

Scientific reports 20190124 1

This study alleviates the low operating temperature constraint of Si qubits. A qubit is a key element for quantum sensors, memories, and computers. Electron spin in Si is a promising qubit, as it allows both long coherence times and potential compatibility with current silicon technology. Si qubits have been implemented using gate-defined quantum dots or shallow impurities. However, operation of Si qubits has been restricted to milli-Kelvin temperatures, thus limiting the application of the quan ...[more]

PMID: 30679469

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