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A silicon-on-insulator slab for topological valley transport.


ABSTRACT: Backscattering suppression in silicon-on-insulator (SOI) is one of the central issues to reduce energy loss and signal distortion, enabling for capability improvement of modern information processing systems. Valley physics provides an intriguing way for robust information transfer and unidirectional coupling in topological nanophotonics. Here we realize topological transport in a SOI valley photonic crystal slab. Localized Berry curvature near zone corners guarantees the existence of valley-dependent edge states below light cone, maintaining in-plane robustness and light confinement simultaneously. Topologically robust transport at telecommunication is observed along two sharp-bend interfaces in subwavelength scale, showing flat-top high transmission of ~10% bandwidth. Topological photonic routing is achieved in a bearded-stack interface, due to unidirectional excitation of valley-chirality-locked edge state from the phase vortex of a nanoscale microdisk. These findings show the prototype of robustly integrated devices, and open a new door towards the observation of non-trivial states even in non-Hermitian systems.

SUBMITTER: He XT 

PROVIDER: S-EPMC6382878 | biostudies-literature | 2019 Feb

REPOSITORIES: biostudies-literature

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A silicon-on-insulator slab for topological valley transport.

He Xin-Tao XT   Liang En-Tao ET   Yuan Jia-Jun JJ   Qiu Hao-Yang HY   Chen Xiao-Dong XD   Zhao Fu-Li FL   Dong Jian-Wen JW  

Nature communications 20190220 1


Backscattering suppression in silicon-on-insulator (SOI) is one of the central issues to reduce energy loss and signal distortion, enabling for capability improvement of modern information processing systems. Valley physics provides an intriguing way for robust information transfer and unidirectional coupling in topological nanophotonics. Here we realize topological transport in a SOI valley photonic crystal slab. Localized Berry curvature near zone corners guarantees the existence of valley-dep  ...[more]

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