Browse
Submit Data
Databases
API
Help

Dataset Information

27 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Fermi level tuning of Ag-doped Bi₂Se₃ topological insulator.

ABSTRACT: The temperature dependence of the resistivity (ρ) of Ag-doped Bi₂Se₃ (Ag_xBi_2-xSe₃) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi₂Se₃ at 1.5-300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi₂Se₃ can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in Ag_xBi_2-xSe₃ and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of Ag_xBi_2-xSe₃ provides metallic behavior that is similar to that of non-doped Bi₂Se₃, indicating a successful upward tuning of the Fermi level.

SUBMITTER: Uesugi E

PROVIDER: S-EPMC6440949 | biostudies-literature |

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

Enhanced Photocharacteristics by Fermi Level Modulating in Sb2 Te3 /Bi2 Se3 Topological Insulator p-n Junction.

Project description:Topological insulators have recently received attention in optoelectronic devices because of their high mobility and broadband absorption resulting from their topological surface states. In particular, theoretical and experimental studies have emerged that can improve the spin generation efficiency in a topological insulator-based p-n junction structure called a TPNJ, drawing attention in optospintronics. Recently, research on implementing the TPNJ structure is conducted; however, studies on the device characteristics of the TPNJ structure are still insufficient. In this study, the TPNJ structure is effectively implemented without intermixing by controlling the annealing temperature, and the photocharacteristics appearing in the TPNJ structure are investigated using a cross-pattern that can compare the characteristics in a single device. Enhanced photo characteristics are observed for the TPNJ structure. An optical pump Terahertz probe and a physical property measurement system are used to confirm the cause of improved photoresponsivity. Consequently, the photocharacteristics are improved owing to the change in the absorption mechanism and surface transport channel caused by the Fermi level shift in the TPNJ structure.

| S-EPMC10953576 | biostudies-literature

Topological delocalization and tuning of surface channel separation in Bi2Se2Te Topological Insulator Thin films.

Project description:The surface states of a 3D topological insulator (TI) exhibit topological protection against backscattering. However, the contribution of bulk electrons to the transport data is an impediment to the topological protection of surface states. We report the tuning of the chemical potential in the bulk in Bi2Se2Te TI thin films, pinning it near the center of the bulk band gap, thereby suppressing the bulk carriers. The temperature dependent resistance of these films show activated behavior down to 50 K, followed by a metallic transition at lower temperatures, a hallmark of robustness of TI surface states. Manifestation of topological protection and surface dominated transport is explained by 2D weak antilocalization phenomenon. We further explore the effect of surface to bulk coupling in TI in this work, which is captured by the number of effective conducting surface channels that participate in the transport. The presence of a single conducting channel indicates a strong surface to bulk coupling which is detrimental to purely topological transport. We demonstrate the decoupling of topological surface states on opposite surfaces of thin films, thereby suppressing the bulk transport. Our findings provide a deeper understanding of surface to bulk coupling along with topological transport behavior and their respective tunability.

| S-EPMC5501793 | biostudies-literature

Superconducting and normal-state anisotropy of the doped topological insulator Sr0.1Bi2Se3.

Project description:SrxBi2Se3 and the related compounds CuxBi2Se3 and NbxBi2Se3 have attracted considerable interest, as these materials may be realizations of unconventional topological superconductors. Superconductivity with Tc ~3 K in SrxBi2Se3 arises upon intercalation of Sr into the layered topological insulator Bi2Se3. Here we elucidate the anisotropy of the normal and superconducting state of Sr0.1Bi2Se3 with angular dependent magnetotransport and thermodynamic measurements. High resolution x-ray diffraction studies underline the high crystalline quality of the samples. We demonstrate that the normal state electronic and magnetic properties of Sr0.1Bi2Se3 are isotropic in the basal plane while we observe a large two-fold in-plane anisotropy of the upper critical field in the superconducting state. Our results support the recently proposed odd-parity nematic state characterized by a nodal gap of Eu symmetry in SrxBi2Se3.

| S-EPMC5956080 | biostudies-literature

Quantum frequency doubling in the topological insulator Bi2Se3.

Project description:The nonlinear Hall effect due to Berry curvature dipole (BCD) induces frequency doubling, which was recently observed in time-reversal-invariant materials. Here we report novel electric frequency doubling in the absence of BCD on a surface of the topological insulator Bi2Se3 under zero magnetic field. We observe that the frequency-doubling voltage transverse to the applied ac current shows a threefold rotational symmetry, whereas it forbids BCD. One of the mechanisms compatible with the symmetry is skew scattering, arising from the inherent chirality of the topological surface state. We introduce the Berry curvature triple, a high-order moment of the Berry curvature, to explain skew scattering under the threefold rotational symmetry. Our work paves the way to obtain a giant second-order nonlinear electric effect in high mobility quantum materials, as the skew scattering surpasses other mechanisms in the clean limit.

| S-EPMC7846578 | biostudies-literature

Thermally generated spin current in the topological insulator Bi2Se3.

Project description:We present measurements of thermally generated transverse spin currents in the topological insulator Bi2Se3, thereby completing measurements of interconversions among the full triad of thermal gradients, charge currents, and spin currents. We accomplish this by comparing the spin Nernst magneto-thermopower to the spin Hall magnetoresistance for bilayers of Bi2Se3/CoFeB. We find that Bi2Se3 does generate substantial thermally driven spin currents. A lower bound for the ratio of spin current density to thermal gradient is [Formula: see text] = (4.9 ± 0.9) × 106 [Formula: see text], and a lower bound for the magnitude of the spin Nernst ratio is -0.61 ± 0.11. The spin Nernst ratio for Bi2Se3 is the largest among all materials measured to date, two to three times larger compared to previous measurements for the heavy metals Pt and W. Strong thermally generated spin currents in Bi2Se3 can be understood via Mott relations to be due to an overall large spin Hall conductivity and its dependence on electron energy.

| S-EPMC10848729 | biostudies-literature

Observation of chiral surface excitons in a topological insulator Bi2Se3.

Project description:The protected electron states at the boundaries or on the surfaces of topological insulators (TIs) have been the subject of intense theoretical and experimental investigations. Such states are enforced by very strong spin-orbit interaction in solids composed of heavy elements. Here, we study the composite particles-chiral excitons-formed by the Coulomb attraction between electrons and holes residing on the surface of an archetypical 3D TI, [Formula: see text] Photoluminescence (PL) emission arising due to recombination of excitons in conventional semiconductors is usually unpolarized because of scattering by phonons and other degrees of freedom during exciton thermalization. On the contrary, we observe almost perfectly polarization-preserving PL emission from chiral excitons. We demonstrate that the chiral excitons can be optically oriented with circularly polarized light in a broad range of excitation energies, even when the latter deviate from the (apparent) optical band gap by hundreds of millielectronvolts, and that the orientation remains preserved even at room temperature. Based on the dependences of the PL spectra on the energy and polarization of incident photons, we propose that chiral excitons are made from massive holes and massless (Dirac) electrons, both with chiral spin textures enforced by strong spin-orbit coupling. A theoretical model based on this proposal describes quantitatively the experimental observations. The optical orientation of composite particles, the chiral excitons, emerges as a general result of strong spin-orbit coupling in a 2D electron system. Our findings can potentially expand applications of TIs in photonics and optoelectronics.

| S-EPMC6410791 | biostudies-literature

Materials analysis and focused ion beam nanofabrication of topological insulator Bi2Se3.

Project description:Focused ion beam milling allows manipulation of the shape and size of nanostructures to create geometries potentially useful for opto-electronics, thermoelectrics, and quantum computing. We focus on using the ion beam to control the thickness of Bi2Se3 and to create nanowires from larger structures. Changes in the material structure of Bi2Se3 nanomaterials that have been milled using a focused ion beam are presented. In order to characterize the effects of ion beam processing on the samples, we use a variety of techniques including analytical transmission electron microscopy and atomic force microscopy. The results show that while part of the material remains intact after shaping, amorphous regions form where the beam has been used to thin the sample. For wires created by thinning the material down to the substrate, the sidewalls of the wires appear intact based on diffraction images from samples cut at an angle, but thin crystalline regions remain at the wire edges. Even with the resulting defects and limitations when thinning, focused ion beam milling can be used to fabricate custom geometries of Bi2Se3 nanostructures.

| S-EPMC5647386 | biostudies-literature

Real-space nanoimaging of THz polaritons in the topological insulator Bi2Se3.

Project description:Plasmon polaritons in topological insulators attract attention from a fundamental perspective and for potential THz photonic applications. Although polaritons have been observed by THz far-field spectroscopy on topological insulator microstructures, real-space imaging of propagating THz polaritons has been elusive so far. Here, we show spectroscopic THz near-field images of thin Bi2Se3 layers (prototypical topological insulators) revealing polaritons with up to 12 times increased momenta as compared to photons of the same energy and decay times of about 0.48 ps, yet short propagation lengths. From the images we determine and analyze the polariton dispersion, showing that the polaritons can be explained by the coupling of THz radiation to various combinations of Dirac and massive carriers at the Bi2Se3 surfaces, massive bulk carriers and optical phonons. Our work provides critical insights into the nature of THz polaritons in topological insulators and establishes instrumentation and methodology for imaging of THz polaritons.

| S-EPMC8927118 | biostudies-literature

Ultrafast photocurrents at the surface of the three-dimensional topological insulator Bi2Se3.

Project description:Three-dimensional topological insulators are fascinating materials with insulating bulk yet metallic surfaces that host highly mobile charge carriers with locked spin and momentum. Remarkably, surface currents with tunable direction and magnitude can be launched with tailored light beams. To better understand the underlying mechanisms, the current dynamics need to be resolved on the timescale of elementary scattering events (∼10 fs). Here, we excite and measure photocurrents in the model topological insulator Bi2Se3 with a time resolution of 20 fs by sampling the concomitantly emitted broadband terahertz (THz) electromagnetic field from 0.3 to 40 THz. Strikingly, the surface current response is dominated by an ultrafast charge transfer along the Se-Bi bonds. In contrast, photon-helicity-dependent photocurrents are found to be orders of magnitude smaller than expected from generation scenarios based on asymmetric depopulation of the Dirac cone. Our findings are of direct relevance for broadband optoelectronic devices based on topological-insulator surface currents.

| S-EPMC5095513 | biostudies-literature

Synthesis and quantum transport properties of Bi?Se? topological insulator nanostructures.

Project description:Bi?Se? nanocrystals with various morphologies, including nanotower, nanoplate, nanoflake, nanobeam and nanowire, have been synthesized. Well-distinguished Shubnikov-de Haas (SdH) oscillations were observed in Bi?Se? nanoplates and nanobeams. Careful analysis of the SdH oscillations suggests the existence of Berry's phase ?, which confirms the quantum transport of the surface Dirac fermions in both Bi?Se? nanoplates and nanobeams without intended doping. The observation of the singular quantum transport of the topological surface states implies that the high-quality Bi?Se? nanostructures have superiorities for investigating the novel physical properties and developing the potential applications.

| S-EPMC3569629 | biostudies-literature