Browse
Submit Data
Databases
API
Help

Dataset Information

22 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Long-term drift of Si-MOS quantum dots with intentional donor implants.

ABSTRACT: Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the QDs. We show that the MOS system exhibits non-equilibrium drift characteristics, in the form of transients and discrete jumps, that are not dependent on the properties of the donor implants. The equilibrium charge noise indicates a 1/f noise dependence, and a noise strength as low as [Formula: see text], comparable to that reported in more model GaAs and Si/SiGe systems (which have also not been implanted). We demonstrate that implanted qubits, therefore, can be fabricated without detrimental effects on long-term drift or 1/f noise for devices with less than 50 implanted donors near the qubit.

SUBMITTER: Rudolph M

PROVIDER: S-EPMC6529408 | biostudies-literature | 2019 May

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Long-term drift of Si-MOS quantum dots with intentional donor implants.

Rudolph M M Sarabi B B Murray R R Carroll M S MS Zimmerman Neil M NM

Scientific reports 20190521 1

Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the QDs. We show that the MOS system exhibits non-equilibrium drift characteristics, in the form of transients and discrete jumps, that are not dependent on the properties of the donor implants. The equilibrium charge noise indicates a 1/f noise dependence, and a noi ...[more]

PMID: 31114008

Similar Datasets

Lasing from Glassy Ge Quantum Dots in Crystalline Si.

Project description:Semiconductor light-emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices. Light sources based on group IV elements would be SIT-compatible, but suffer from the poor optoelectronic properties of bulk Si and Ge. Here we demonstrate that epitaxially grown Ge quantum dots (QDs) in a defect-free Si matrix show extraordinary optical properties if partially amorphized by Ge-ion bombardment (GIB). In contrast to conventional SiGe nanostructures, these QDs exhibit dramatically shortened carrier lifetimes and negligible thermal quenching of the photoluminescence (PL) up to room temperature. Microdisk resonators with embedded GIB-QDs exhibit threshold behavior as well as a superlinear increase of the integrated PL intensity with concomitant line width narrowing as the pump power increases. These findings demonstrate light amplification by stimulated emission in a fully SIT-compatible group IV nanosystem.

| S-EPMC4759615 | biostudies-literature

Laser-synthesized oxide-passivated bright Si quantum dots for bioimaging.

Project description:Crystalline silicon (Si) nanoparticles present an extremely promising object for bioimaging based on photoluminescence (PL) in the visible and near-infrared spectral regions, but their efficient PL emission in aqueous suspension is typically observed after wet chemistry procedures leading to residual toxicity issues. Here, we introduce ultrapure laser-synthesized Si-based quantum dots (QDs), which are water-dispersible and exhibit bright exciton PL in the window of relative tissue transparency near 800?nm. Based on the laser ablation of crystalline Si targets in gaseous helium, followed by ultrasound-assisted dispersion of the deposited films in physiological saline, the proposed method avoids any toxic by-products during the synthesis. We demonstrate efficient contrast of the Si QDs in living cells by following the exciton PL. We also show that the prepared QDs do not provoke any cytoxicity effects while penetrating into the cells and efficiently accumulating near the cell membrane and in the cytoplasm. Combined with the possibility of enabling parallel therapeutic channels, ultrapure laser-synthesized Si nanostructures present unique object for cancer theranostic applications.

| S-EPMC4840388 | biostudies-literature

Long-term persistence and spectral blue shifting of quantum dots in vivo.

Project description:Quantum dots are a powerful fluorophore family with desirable attributes for fluorescence imaging. They have been used in several animal models with direct clinical relevance, including sentinel lymph node mapping, tracing vasculature and lymphatics, and targeting specific lesions for diagnosis and removal. (1-12) Despite significant interest for use in translational applications, little is known about the persistence and long-term fate of quantum dots in vivo. We have observed fluorescence of quantum dots injected into Balb/c and nude mice for up to two-years post injection using both whole-body and microscopic fluorescence techniques. Two-photon spectral microscopy was used to verify the existence of quantum dots within two-year tissues, but also revealed a range of significantly blue-shifted emission peaks with increased bandwidths. Systemically administered quantum dots persist and retain fluorescence for up to two-years in vivo, but with significantly blue-shifted emission.

| S-EPMC2727854 | biostudies-literature

Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots.

Project description:Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processors. Here, we elucidate and statistically predict the valley splitting by the holistic integration of 3D atomic-level properties, theory and transport. We find that the concentration fluctuations of Si and Ge atoms within the 3D landscape of Si/SiGe interfaces can explain the observed large spread of valley splitting from measurements on many quantum dot devices. Against the prevailing belief, we propose to boost these random alloy composition fluctuations by incorporating Ge atoms in the Si quantum well to statistically enhance valley splitting.

| S-EPMC9747794 | biostudies-literature

Transcriptome Profile of Quantum Dots on Saccharomyces cerevisiae

Project description:Transcriptome Profile of CdSe/ZnS and InP/ZnS Quantum Dots on Saccharomyces cerevisiae

2021-01-30 | GSE165805 | GEO

Singly ionized double-donor complex in vertically coupled quantum dots.

Project description:The electronic states of a singly ionized on-axis double-donor complex (D2+) confined in two identical vertically coupled, axially symmetrical quantum dots in a threading magnetic field are calculated. The solutions of the Schrödinger equation are obtained by a variational separation of variables in the adiabatic limit. Numerical results are shown for bonding and antibonding lowest-lying artificial molecule states corresponding to different quantum dot morphologies, dimensions, separation between them, thicknesses of the wetting layers, and magnetic field strength.

| S-EPMC3477053 | biostudies-literature

Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates.

Project description:Self-catalyzed AlGaAs nanowires (NWs) and NWs with a GaAs quantum dot (QD) were monolithically grown on Si(111) substrates via solid-source molecular beam epitaxy. This growth technique is advantageous in comparison to the previously employed Au-catalyzed approach, as it removes Au contamination issues and renders the structures compatible with complementary metal-oxide-semiconductor (CMOS) technology applications. Structural studies reveal the self-formation of an Al-rich AlGaAs shell, thicker at the NW base and thinning towards the tip, with the opposite behavior observed for the NW core. Wide alloy fluctuations in the shell region are also noticed. AlGaAs NW structures with nominal Al contents of 10, 20, and 30% have strong room temperature photoluminescence, with emission in the range of 1.50-1.72 eV. Individual NWs with an embedded 4.9 nm-thick GaAs region exhibit clear QD behavior, with spatially localized emission, both exciton and biexciton recombination lines, and an exciton line width of 490 μeV at low temperature. Our results demonstrate the properties and behavior of the AlGaAs NWs and AlGaAs/GaAs NWQDs grown via the self-catalyzed approach for the first time and exhibit their potential for a range of novel applications, including nanolasers and single-photon sources.

| S-EPMC8279736 | biostudies-literature

Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations.

Project description:Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to achieving high-fidelity single- and two-qubit gates in these devices. In this work, we measure the charge-noise spectrum of a Si/SiGe singlet-triplet qubit over nearly 12 decades in frequency using a combination of methods, including dynamically-decoupled exchange oscillations with up to 512 π pulses during the qubit evolution. The charge noise is colored across the entire frequency range of our measurements, although the spectral exponent changes with frequency. Moreover, the charge-noise spectrum inferred from conductance measurements of a proximal sensor quantum dot agrees with that inferred from coherent oscillations of the singlet-triplet qubit, suggesting that simple transport measurements can accurately characterize the charge noise over a wide frequency range in Si/SiGe quantum dots.

| S-EPMC8854405 | biostudies-literature

Programmable electronic synapse and nonvolatile resistive switches using MoS<sub>2</sub> quantum dots.

Project description:Brain-inspired computation that mimics the coordinated functioning of neural networks through multitudes of synaptic connections is deemed to be the future of computation to overcome the classical von Neumann bottleneck. The future artificial intelligence circuits require scalable electronic synapse (e-synapses) with very high bit densities and operational speeds. In this respect, nanostructures of two-dimensional materials serve the purpose and offer the scalability of the devices in lateral and vertical dimensions. In this work, we report the nonvolatile bipolar resistive switching and neuromorphic behavior of molybdenum disulfide (MoS2) quantum dots (QD) synthesized using liquid-phase exfoliation method. The ReRAM devices exhibit good resistive switching with an On-Off ratio of 104, with excellent endurance and data retention at a smaller read voltage as compared to the existing MoS2 based memory devices. Besides, we have demonstrated the e-synapse based on MoS2 QD. Similar to our biological synapse, Paired Pulse Facilitation / Depression of short-term memory has been observed in these MoS2 QD based e-synapse devices. This work suggests that MoS2 QD has potential applications in ultra-high-density storage as well as artificial intelligence circuitry in a cost-effective way.

| S-EPMC7381601 | biostudies-literature

Phosphorescent MoS<sub>2</sub> quantum dots as a temperature sensor and security ink.

Project description:Currently, few phosphorescent materials (PMs) possess a long phosphorescence lasting time and have potential for application in chemical sensors. Herein, we disclose that the incorporation of few-layer molybdenum disulfide quantum dots (FL-MoS2 QDs) into poly(vinyl alcohol) (PVA) matrices leads to the emission of bright green phosphorescence with a long lasting time of 3.0 s and a phosphorescence quantum yield of 20%. This enhanced phosphorescence originates from the formation of O-H⋯S hydrogen bonding networks between the rich sulfur sites of the FL-MoS2 QDs and the hydroxyl groups of the PVA molecules, which not only rigidifies the vibration modes of the FL-MoS2 QDs but also provides an oxygen barrier. Further investigations reveal that the FL-MoS2 QD/PVA composites exhibit a longer phosphorescence lasting time than N,S-doped carbon dots, few layer tungsten disulfide quantum dots, Rhodamine 6G, and Rhodamine B in PVA matrices. Since heat efficiently induced the removal of water moisture from PVA matrices, the FL-MoS2 QD/PVA composites could be implemented for phosphorescence turn-on and naked-eye detection of temperature variations ranging from 30 to 70 °C. By contrast, the carbon dot/PVA composites were incapable of sensing environmental temperature due to their weak hydrogen bonding with the hydroxyl groups of PVA matrices. Additionally, this study reveals the potential of the FL-MoS2 QD/PVA composites as an advanced security ink for anti-counterfeiting and encryption applications. The given results could open a new direction for potential application of two-dimensional quantum dots in phosphorescence-based sensors and security inks.

| S-EPMC9417700 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data