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Defect engineering of metal-oxide interface for proximity of photooxidation and photoreduction.

ABSTRACT: Close proximity between different catalytic sites is crucial for accelerating or even enabling many important catalytic reactions. Photooxidation and photoreduction in photocatalysis are generally separated from each other, which arises from the hole-electron separation on photocatalyst surface. Here, we show with widely studied photocatalyst Pt/[Formula: see text] as a model, that concentrating abundant oxygen vacancies only at the metal-oxide interface can locate hole-driven oxidation sites in proximity to electron-driven reduction sites for triggering unusual reactions. Solar hydrogen production from aqueous-phase alcohols, whose hydrogen yield per photon is theoretically limited below 0.5 through conventional reactions, achieves an ultrahigh hydrogen yield per photon of 1.28 through the unusual reactions. We demonstrated that such defect engineering enables hole-driven CO oxidation at the Pt-[Formula: see text] interface to occur, which opens up room-temperature alcohol decomposition on Pt nanoparticles to [Formula: see text] and adsorbed CO, accompanying with electron-driven proton reduction on Pt to [Formula: see text].

SUBMITTER: Zhou Y

PROVIDER: S-EPMC6534996 | biostudies-literature |

REPOSITORIES: biostudies-literature

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Project description:The contact resistance of the transition metal dichalcogenide (TMD) devices is not comparable to that of their silicon counterparts, probably due to a lack of clarity in their interface chemistry. Looking beyond the conventional Schottky-Mott rule, the metal chalcogen orbital overlaps, tunnel barrier, and metal-induced gap states (MIGSs) are crucial factors determining different metals' contact properties with TMDs. Exploring their properties helps TMDs' contact resistance engineering, driven mainly by their orbital overlaps and perturbing parameters. This work presents the interface chemistry of TMDs (MoS2, MoSe2, WS2, and WSe2) with different metals (Au, Cr, Ni, and Pd) in detail using density functional theory computations. Additionally, the work discusses the role of the chalcogen vacancy and interstitial defects in the metal-TMD interactions and corresponding MIGS features. The investigations reveal that Au does not show any significant MIGS due to its weak interactions with all the TMDs. However, other investigated metals have a strong affinity with TMDs, making significant MIGS contributions. All the metals offer n-type doping characteristics to TMDs due to valence charge transfer from the metals toward TMDs. The chalcogen vacancy boosts the orbital overlaps of the TMDs with all the metals. The vacancy reduces metal-TMD interfacial distance, which can be a promising technique to reduce the tunnel barrier and contact resistance. The MIGS and defect-induced gap states (DIGSs) reflect the possibility of Fermi-level pinning in the TMDs' contacts with Cr, Ni, and Pd. Besides, the work discloses that the chalcogen vacancy converts an n-type Pd-TMD interface into p-type due to reverse charge transfer after the vacancy. Chalcogen interstitial impurity also helps with contact resistance engineering for some metal-TMD systems by reducing the bond distance of the metal TMDs. Our study highlights the possibility of defect-assisted and MIGS-based contact engineering at the metal-TMD interfaces.

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Defect engineering of metal-oxide interface for proximity of photooxidation and photoreduction.

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