Browse
Submit Data
Databases
API
Help

Dataset Information

23 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Structural and Photoelectric Properties of Epitaxially Grown Vanadium Dioxide Thin Films on c-Plane Sapphire and Titanium Dioxide.

ABSTRACT: Vanadium dioxide (VO2) is one of the most extensively studied materials in the strongly correlated electron family capable of sustaining an insulator-to-metal transition. Here we present our studies of high-quality thin films of epitaxially grown VO2 on c-Al2O3(0001) and TiO2(001) via reactive DC pulsed magnetron sputtering. We present the structural transition probed via Reflection High Energy Electron Diffraction (RHEED) for the first time and we correlate the surface microstructure measurements with simulations before, during, and after the thermally induced transition. We also study the photoelectric conversion of VO2 on TiO2(001) and c-Al2O3(0001) under 405?nm light and demonstrate up to a 2000% increase in quantum efficiency as the power of the light is varied for VO2 on TiO2(001).

SUBMITTER: Creeden JA

PROVIDER: S-EPMC6597701 | biostudies-literature | 2019 Jun

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Structural and Photoelectric Properties of Epitaxially Grown Vanadium Dioxide Thin Films on c-Plane Sapphire and Titanium Dioxide.

Creeden Jason A JA Madaras Scott E SE Beringer Douglas B DB Beebe Melissa R MR Novikova Irina I Lukaszew R Ale RA

Scientific reports 20190627 1

Vanadium dioxide (VO2) is one of the most extensively studied materials in the strongly correlated electron family capable of sustaining an insulator-to-metal transition. Here we present our studies of high-quality thin films of epitaxially grown VO2 on c-Al2O3(0001) and TiO2(001) via reactive DC pulsed magnetron sputtering. We present the structural transition probed via Reflection High Energy Electron Diffraction (RHEED) for the first time ...[more]

PMID: 31249373

Similar Datasets

Highly Reduced Saturation Magnetization in Epitaxially Grown Ferrimagnetic Heusler Thin Films.

Project description:The key of spintronic devices using the spin-transfer torque phenomenon is the effective reduction of switching current density by lowering the damping constant and the saturation magnetization while retaining strong perpendicular magnetic anisotropy. To reduce the saturation magnetization, particular conditions such as specific substitutions or buffer layers are required. Herein, we demonstrate highly reduced saturation magnetization in tetragonal D022 Mn3-x Ga thin films prepared by rf magnetron sputtering, where the epitaxial growth is examined on various substrates without any buffer layer. As the lattice mismatch between the sample and the substrate decreases from LaAlO3 and (LaAlO3)0.3(Sr2AlTaO6)0.7 to SrTiO3, the quality of Mn3-x Ga films is improved together with the magnetic and electronic properties. Especially, the Mn3-x Ga thin film epitaxially grown on the SrTiO3 substrate, fully oriented along the c axis perpendicular to the film plane, exhibits significantly reduced saturation magnetization as low as 0.06 ?B, compared to previous results. By the structural and chemical analyses, we find that the predominant removal of Mn II atoms and the large population of Mn3+ ions affect the reduced saturation magnetization. Our findings provide insights into the magnetic properties of Mn3-x Ga crystals, which promise great potential for spin-related device applications.

| S-EPMC6788061 | biostudies-literature

High electron mobility and low carrier concentration of hydrothermally grown ZnO thin films on seeded a-plane sapphire at low temperature.

Project description:Hydrothermal zinc oxide (ZnO) thick films were successfully grown on the chemical vapor deposition (CVD)-grown thick ZnO seed layers on a-plane sapphire substrates using the aqueous solution of zinc nitrate dehydrate (Zn(NO3)2). The use of the CVD ZnO seed layers with the flat surfaces seems to be a key technique for obtaining thick films instead of vertically aligned nanostructures as reported in many literatures. All the hydrothermal ZnO layers showed the large grains with hexagonal end facets and were highly oriented towards the c-axis direction. Photoluminescence (PL) spectra of the hydrothermal layers were composed of the ultraviolet (UV) emission (370 to 380 nm) and the visible emission (481 to 491 nm), and the intensity ratio of the former emission (I UV) to the latter emission (I VIS) changed, depending on both the molarity of the solution and temperature. It is surprising that all the Hall mobilities for the hydrothermal ZnO layers were significantly larger than those for their corresponding CVD seed films. It was also found that, for the hydrothermal films grown at 70°C to 90°C, the molarity dependences of I UV/I VIS resembled those of mobilities, implying that the mobility in the film is affected by the structural defects. The highest mobility of 166 cm(2)/Vs was achieved on the hydrothermal film with the carrier concentration of 1.65?×?10(17) cm(-3) grown from the aqueous solution of 40 mM at 70°C.

| S-EPMC4312313 | biostudies-literature

Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering.

Project description:Topologically protected chiral skyrmions are an intriguing spin texture that has attracted much attention because of fundamental research and future spintronic applications. MnSi with a non-centrosymmetric structure is a well-known material hosting a skyrmion phase. To date, the preparation of MnSi crystals has been investigated by using special instruments with an ultrahigh vacuum chamber. Here, we introduce a facile way to grow MnSi films on a sapphire substrate using a relatively low vacuum environment of conventional magnetron sputtering. Although the as-grown MnSi films have a polycrystalline nature, a stable skyrmion phase in a broad range of temperatures and magnetic fields is observed via magnetotransport properties including phenomenological scaling analysis of the Hall resistivity contribution. Our findings provide not only a general way to prepare the materials possessing skyrmion phases but also insight into further research to stimulate more degrees of freedom in our inquisitiveness.

| S-EPMC7788108 | biostudies-literature

Epitaxially stabilized thin films of ?-Fe2O3 (001) grown on YSZ (100).

Project description:Epsilon ferrite (?-Fe2O3) is a metastable phase of iron(III) oxide, intermediate between maghemite and hematite. It has recently attracted interest because of its magnetocrystalline anisotropy, which distinguishes it from the other polymorphs, and results in a gigantic coercive field and a natural ferromagnetic resonance frequency in the THz range. Moreover, it possesses a polar crystal structure, making it a potential ferroelectric, hence a potential multiferroic. Due to the need of size confinement to stabilize the metastable phase, ?-Fe2O3 has been synthesized mainly as nanoparticles. However, to favor integration in devices, and take advantage of its unique functional properties, synthesis as epitaxial thin films is desirable. In this paper, we report the growth of ?-Fe2O3 as epitaxial thin films on (100)-oriented yttrium-stabilized zirconia substrates. Structural characterization outlined the formation of multiple in-plane twins, with two different epitaxial relations to the substrate. Transmission electron microscopy showed how such twins develop in a pillar-like structure from the interface to the surface. Magnetic characterization confirmed the high magnetocrystalline anisotropy of our film and revealed the presence of a secondary phase which was identified as the well-known magnetite. Finally, angular analysis of the magnetic properties revealed how the presence of twins impacts their azimuthal dependence.

| S-EPMC5473884 | biostudies-other

Epitaxially grown BaM hexaferrite films having uniaxial axis in the film plane for self-biased devices.

Project description:Barium hexaferrite (BaM) films with in-plane c-axis orientation are promising and technically important materials for self-biased magnetic microwave devices. In this work, highly oriented BaM films with different thickness and an in-plane easy axis (c-axis) of magnetization were grown on a-plane single-crystal sapphire substrates by direct current magnetron sputtering. A procedure involving seed layers, layer-by-layer annealing was adopted to reduce the substrate-induced strains and allow for the growth of thick (~3.44 μm) films. The epitaxial growth of the BaM film on sapphire was revealed by high-resolution transmission electron microscopy with dislocations being observed at the film-substrate interface. The orientation was also verified by X-ray diffraction and more notably, polarized Raman scattering. The magnetic properties and ferromagnetic resonant frequencies were experimentally characterized by a vibrating sample magnetometry and a frequency-swept ferromagnetic resonant flip-chip technique, respectively. The micron-thick BaM films exhibited a large remanence ratio of 0.92 along in-plane easy axis and a small one of 0.09 for the in-plane hard axis loop measurement. The FMR frequency was 50.3 GHz at zero field and reached 57.9 GHz under a magnetic field of 3 kOe, indicating that the epitaxial BaM films with strong self-biased behaviors have good electromagnetic properties in millimeter-wave range.

| S-EPMC5343456 | biostudies-literature

Localized Strain Measurement in Molecular Beam Epitaxially Grown Chalcogenide Thin Films by Micro-Raman Spectroscopy.

Project description:We developed an experimental metrology for measuring local strain in molecular beam epitaxially (MBE) grown crystalline chalcogenide thin films through micro-Raman spectroscopy. For In2Se3 and Bi2Se3 on c-plane sapphire substrates, the transverse-optical vibrational mode (A1 phonon) is most sensitive to strain. We first calibrated the phonon frequency-strain relationship in each material by introducing strain in flexible substrates. The Raman shift-strain coefficient is -1.97 cm-1/% for the In2Se3 A1(LO + TO) mode and -1.68 cm-1/% for the Bi2Se3 A1g 2 mode. In2Se3 and Bi2Se3 samples exhibit compressive strain and tensile strain, respectively. The observations are compliant with predictions from the opposite relative thermal expansion coefficient between the sample and the substrate. We also map strain cartography near the edge of as-grown MBE samples. In In2Se3, the strain accumulates with increasing film thickness, while a low strain is observed in thicker Bi2Se3 films.

| S-EPMC7161023 | biostudies-literature

Anisotropic vanadium dioxide sculptured thin films with superior thermochromic properties.

Project description:VO2 (M) STF through reduction of V2O5 STF was prepared. The results illustrate that V2O5 STF can be successfully obtained by oblique angle thermal evaporation technique. After annealing at 550 °C/3 min, the V2O5 STF deposited at 85° can be easily transformed into VO2 STF with slanted columnar structure and superior thermochromic properties. After deposition SiO2 antireflective layer, Tlum of VO2 STF is enhanced 26% and ΔTsol increases 60% compared with that of normal VO2 thin films. Due to the anisotropic microstructure of VO2 STF, angular selectivity transmission of VO2 STF is observed and the solar modulation ability is further improved from 7.2% to 8.7% when light is along columnar direction. Moreover, the phase transition temperature of VO2 STF can be depressed into 54.5 °C without doping. Considering the oblique incidence of sunlight on windows, VO2 STF is more beneficial for practical application as smart windows compared with normal homogenous VO2 thin films.

| S-EPMC3783039 | biostudies-other

Imaging the nanoscale phase separation in vanadium dioxide thin films at terahertz frequencies.

Project description:Vanadium dioxide (VO2) is a material that undergoes an insulator-metal transition upon heating above 340?K. It remains debated as to whether this electronic transition is driven by a corresponding structural transition or by strong electron-electron correlations. Here, we use apertureless scattering near-field optical microscopy to compare nanoscale images of the transition in VO2 thin films acquired at both mid-infrared and terahertz frequencies, using a home-built terahertz near-field microscope. We observe a much more gradual transition when THz frequencies are utilized as a probe, in contrast to the assumptions of a classical first-order phase transition. We discuss these results in light of dynamical mean-field theory calculations of the dimer Hubbard model recently applied to VO2, which account for a continuous temperature dependence of the optical response of the VO2 in the insulating state.

| S-EPMC6127259 | biostudies-literature

Growth of vanadium dioxide thin films on hexagonal boron nitride flakes as transferrable substrates.

Project description:Vanadium dioxide (VO2) is an archetypal metal-insulator transition (MIT) material, which has been known for decades to show an orders-of-magnitude change in resistivity across the critical temperature of approximately 340?K. In recent years, VO2 has attracted increasing interest for electronic and photonic applications, along with advancement in thin film growth techniques. Previously, thin films of VO2 were commonly grown on rigid substrates such as crystalline oxides and bulk semiconductors, but the use of transferrable materials as the growth substrates can provide versatility in applications, including transparent and flexible devices. Here, we employ single-crystalline hexagonal boron nitride (hBN), which is an insulating layered material, as a substrate for VO2 thin film growth. VO2 thin films in the polycrystalline form are grown onto hBN thin flakes exfoliated onto silicon (Si) with a thermal oxide, with grains reaching up-to a micrometer in size. The VO2 grains on hBN are orientated preferentially with the (110) surface of the rutile structure, which is the most energetically favorable. The VO2 film on hBN shows a MIT at approximately 340?K, across which the resistivity changes by nearly three orders of magnitude, comparable to VO2 films grown on common substrates such as sapphire and titanium dioxide. The VO2/hBN stack can be picked up from the supporting Si and transferred onto arbitrary substrates, onto which VO2 thin films cannot be grown directly. Our results pave the way for new possibilities for practical and versatile applications of VO2 thin films in electronics and photonics.

| S-EPMC6393539 | biostudies-literature

The Luminescence of 1,8-Diazafluoren-9-One/Titanium Dioxide Composite Thin Films for Optical Application.

Project description:The investigation of innovative label-free ?-amino acids detection methods represents a crucial step for the early diagnosis of several diseases. While 1,8-diazafluoren-9-one (DFO) is known in forensic application because of the fluorescent products by reacting with the amino acids present in the papillary exudate, its application for diagnostic purposes has not been fully investigated. The stabilization of DFO over a transparent substrate allows its complexation with biomolecules for the detection of ?-amino acids. In this study, DFO was immobilized into a titanium dioxide (TiO2) matrix for the fluorescence detection of glycine, as a target ?-amino acid (a potential marker of the urogenital tract cancers). The DFO/TiO2 composite was characterized by atomic force microscopy, spectroscopic ellipsometry, fluorescence spectroscopy and fluorescence microscopy. The performed fluorescent studies indicate spectacular formation of aggregates at higher concentration. The measurements performed using various fluorescence and microscopic techniques together with the suitable analysis show that the aggregates are able to emit short-lived fluorescence.

| S-EPMC7372385 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data