Browse
Submit Data
Databases
API
Help

Dataset Information

14 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Effect of device design on charge offset drift in Si/SiO2 single electron devices.

ABSTRACT: We have measured the low-frequency time instability known as charge offset drift of Si/SiO2 single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less charge offset drift, exhibiting fewer isolated jumps and a factor of two reduction in fluctuations about a stable mean value. The observed reduction can be accounted for by the electrostatic reduction in the mutual capacitance Cm between defects and the quantum dot, and increase in the total defect capacitance Cd due to the top gate. These results depart from the prominent interpretation that the level of charge offset drift in SEDs is determined by the intrinsic material properties, forcing consideration of the device design as well. We expect these results to be of importance in developing SEDs for applications from quantum information to metrology or wherever charge noise or integrability of devices is a challenge.

SUBMITTER: Hu B

PROVIDER: S-EPMC6604639 | biostudies-literature | 2018

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Effect of device design on charge offset drift in Si/SiO2 single electron devices.

Hu Binhui B Ochoa Erick D ED Sanchez Daniel D Perron Justin K JK Zimmerman Neil M NM Stewart M D MD

Journal of applied physics 20180101

We have measured the low-frequency time instability known as charge offset drift of Si/SiO2 single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less charge offset drift, exhibiting fewer isolated jumps and a factor of two reduction in fluctuations about a stable mean value. The observed reduction can be accounted for by the electrostatic reduction in the mutual capacitance Cm betwee ...[more]

PMID: 31274883

Similar Datasets

Controlled synthesis and luminescence properties of core-shell-shell structured SiO2@AIPA-S-Si-Eu@SiO2 and SiO2@AIPA-S-Si-Eu-phen@SiO2 nanocomposites.

Project description:Two novel core-shell structured SiO2@AIPA-S-Si-Eu and SiO2@AIPA-S-Si-Eu-phen nanocomposites have been synthesized by a bifunctional organic ligands ((HOOC)2C6H3NHCONH(CH2)3Si(OCH2CH3)3) (defined as AIPA-S-Si) connected with Eu3+ ions and silica via covalent bond. And the corresponding core-shell-shell structured SiO2@AIPA-S-Si-Eu@SiO2 and SiO2@AIPA-S-Si-Eu-phen@SiO2 nanocomposites with enhanced luminescence have been synthesized by tetraethyl orthosilicate (TEOS) hydrolysis co-deposition method. The composition and micromorphology of the nanocomposites were characterized by means of Fourier-transform infrared spectroscopy (FT-IR), thermal gravimetric analysis (TG), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectrometry (EDX) and X-ray photoelectron spectroscopy (XPS). The as-synthesized core-shell and core-shell-shell structured nanocomposites have excellent luminescence intensity and long lifetime. The nanocomposites show bright red light under ultraviolet lamp. However, the core-shell-shell structured nanocomposites have stronger luminescence intensity than the corresponding core-shell structured nanocomposites. Meanwhile, the core-shell-shell structured nanocomposites still exhibit good luminescence stability in aqueous solution. In addition, a large number of Si-OH on the surface of the core-shell-shell structured nanocomposites can be attached to many biomacromolecules. Therefore, they have potential applications in the fields of biology and luminescence.

| S-EPMC7044297 | biostudies-literature

Reduction of charge offset drift using plasma oxidized aluminum in SETs.

Project description:Aluminum oxide ([Formula: see text])-based single-electron transistors (SETs) fabricated in ultra-high vacuum (UHV) chambers using in situ plasma oxidation show excellent stabilities over more than a week, enabling applications as tunnel barriers, capacitor dielectrics or gate insulators in close proximity to qubit devices. Historically, [Formula: see text]-based SETs exhibit time instabilities due to charge defect rearrangements and defects in [Formula: see text] often dominate the loss mechanisms in superconducting quantum computation. To characterize the charge offset stability of our [Formula: see text]-based devices, we fabricate SETs with sub-1 e charge sensitivity and utilize charge offset drift measurements (measuring voltage shifts in the SET control curve). The charge offset drift ([Formula: see text]) measured from the plasma oxidized [Formula: see text] SETs in this work is remarkably reduced (best [Formula: see text] over [Formula: see text] days and no observation of [Formula: see text] exceeding [Formula: see text]), compared to the results of conventionally fabricated [Formula: see text] tunnel barriers in previous studies (best [Formula: see text] over [Formula: see text] days and most [Formula: see text] within one day). We attribute this improvement primarily to using plasma oxidation, which forms the tunnel barrier with fewer two-level system (TLS) defects, and secondarily to fabricating the devices entirely within a UHV system.

| S-EPMC7588434 | biostudies-literature

Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene.

Project description:One of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth wafers onto the isolating target wafers. In the present research, graphene was transferred from the chemical vapor deposited 200 mm Germanium/Silicon (Ge/Si) wafers onto isolating (SiO2/Si and Si3N4/Si) wafers by electrochemical delamination procedure, employing poly(methylmethacrylate) as an intermediate support layer. In order to influence the adhesion properties of graphene, the wettability properties of the target substrates were investigated in this study. To increase the adhesion of the graphene on the isolating surfaces, they were pre-treated with oxygen plasma prior the transfer process of graphene. The wetting contact angle measurements revealed the increase of the hydrophilicity after surface interaction with oxygen plasma, leading to improved adhesion of the graphene on 200 mm target wafers and possible proof-of-concept development of graphene-based devices in standard Si technologies.

| S-EPMC8222355 | biostudies-literature

Synthesis and Luminescence Properties of Core-Shell-Shell Composites: SiO₂@PMDA-Si-Tb@SiO₂ and SiO₂@PMDA-Si-Tb-phen@SiO₂.

Project description:Two novel core-shell composites SiO₂@PMDA-Si-Tb, SiO₂@PMDA-Si-Tb-phen with SiO₂ as the core and terbium organic complex as the shell, were successfully synthesized. The terbium ion was coordinated with organic ligand forming terbium organic complex in the shell layer. The bi-functional organosilane ((HOOC)₂C₆H₂(CONH(CH₂)₃Si(OCH₂CH₃)₃)₂ (abbreviated as PMDA-Si) was used as the first ligand and phen as the second ligand. Furthermore, the silica-modified SiO₂@PMDA-Si-Tb@SiO₂ and SiO₂@PMDA-Si-Tb-phen@SiO₂ core-shell-shell composites were also synthesized by sol-gel chemical route. An amorphous silica shell was coated around the SiO₂@PMDA-Si-Tb and SiO₂@PMDA-Si-Tb-phen core-shell composites. The core-shell and core-shell-shell composites both exhibited excellent luminescence in solid state. The luminescence of core-shell-shell composites was stronger than that of core-shell composites. Meanwhile, an improved luminescence stability property for the core-shell-shell composites was found in the aqueous solution. The core-shell-shell composites exhibited bright luminescence, high stability, long lifetime, and good solubility, which may present potential applications in the bio-medical field.

| S-EPMC6410162 | biostudies-literature

Capacitive humidity sensing properties of freestanding bendable porous SiO2/Si thin films.

Project description:The fabrication of freestanding bendable films without polymer substrates is demonstrated as a capacitive humidity-sensing material. The bendable and porous SiO2/Si films are simply prepared by electrochemical-assisted stripping, metal-assisted chemical etching, followed by oxidation procedures. The capacitive humidity-sensing properties of the fabricated porous SiO2/Si film are characterized as a function of the relative humidity and frequency. The remarkable sensing performance is demonstrated in the wide RH range from 13.8 to 79.0%. The sensing behavior of the porous SiO2/Si film is studied by electrochemical impedance spectroscopy analysis. Additionally, the reliability of the porous SiO2/Si sensing material is confirmed by cyclic and long-term sensing tests.

| S-EPMC9270390 | biostudies-literature

Investigation of Boron Distribution at the SiO2/Si Interface of Monolayer Doping.

Project description:Monolayer doping is a possible method for achieving complex-geometry structures with different semiconductors. Understanding the dopant diffusion behavior of monolayer doping, especially under different heating sources, is essential for further improvement. We examine and compare the doping profile and dopant activation with two different heating sources (rapid thermal annealing and microwave annealing), especially focused on SiO2/Si interface. These heating sources are used for junction diode fabrication, to realize current switching behavior. Direct observations of monolayer doping profiles, especially inside the capping oxide, are discussed to provide quantitative information for dopant concentration. This can provide significant information for better tuning of surface chemistries and process protocols applied in monolayer doping methodologies.

| S-EPMC7807803 | biostudies-literature

Pomegranate-Like Structured Si@SiOx Composites With High-Capacity for Lithium-Ion Batteries.

Project description:Silicon anodes with an extremely high theoretical specific capacity of 4,200 mAh g-1 have been considered as one of the most promising anode materials for next-generation lithium-ion batteries. However, the large volume expansion during lithiation hinders its practical application. In this work, pomegranate-like Si@SiOx composites were prepared using a simple spray drying process, during which silicon nanoparticles reacted with oxygen and generated SiOx on the surface. The thickness of the SiOx layer was tuned by adjusting the drying temperature. In the unique architecture, the SiOx which serves as the protection layer and the void space in pomegranate-like structure could alleviate the volume expansion during repeated lithium insertion/extraction. As a lithium-ion battery anode, pomegranate-like Si@SiOx composites dried at 180°C delivered a high specific capacity of 1746.5 mAh g-1 after 300 cycles at 500 mA g-1.

| S-EPMC7516033 | biostudies-literature

Synthesis of SiC/SiO2 core-shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature.

Project description:In this study, the high-density SiC/SiO2 core-shell nanowires were synthesized on the nickel coated SiO2 (100 nm)/Si substrate by chemical vapor deposition (CVD) method with ferrocene precursor at temperature 1000 °C compared to previous studies (1300-1600 °C). The present work provides an efficient strategy for the production of SiC/SiO2 nanowires with uniform morphology and good optical properties, where the Ni layer plays important roles for this fabrication at low temperature which reduces the decomposition temperature of hydrocarbon gases and improves the growth quality of SiC nanowires. The as-synthesized SiC/SiO2 nanowires consist of single crystal 3C structures as well as 3C structures with defects along [111] direction. In the photoluminescence (PL) spectrum, the SiC/SiO2 core-shell nanowires revealed an obvious blueshift. The blueshift is due to the formation of nanoscale silicon carbide polytypism caused by the stacking faults in 3C-SiC and the nanoscale polytypism also caused the transition from indirect to direct bandgap which explains why the stacking faults percentage in SiC confirmed from X-ray diffraction (XRD) is 19%, but ultimately makes the strongest emission intensity. Finally, the PL characteristics are further improved by changing the diameter of the SiC nanowire and etching and an approximate model followed by the vapor-liquid-solid (VLS) mechanism was proposed to explain the possible growth mechanism of the SiC/SiO2 nanowires.

| S-EPMC7794414 | biostudies-literature

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating.

Project description:Impurity doping of ultrasmall nanoscale (usn) silicon (Si) currently used in ultralarge scale integration (ULSI) faces serious miniaturization challenges below the 14 nm technology node such as dopant out-diffusion and inactivation by clustering in Si-based field-effect transistors (FETs). Moreover, self-purification and massively increased ionization energy cause doping to fail for Si nano-crystals (NCs) showing quantum confinement. To introduce electron- (n-) or hole- (p-) type conductivity, usn-Si may not require doping, but an energy shift of electronic states with respect to the vacuum energy between different regions of usn-Si. We show in theory and experiment that usn-Si can experience a considerable energy offset of electronic states by embedding it in silicon dioxide (SiO2) or silicon nitride (Si3N4), whereby a few monolayers (MLs) of SiO2 or Si3N4 are enough to achieve these offsets. Our findings present an alternative to conventional impurity doping for ULSI, provide new opportunities for ultralow power electronics and open a whole new vista on the introduction of p- and n-type conductivity into usn-Si.

| S-EPMC6122087 | biostudies-literature

Millimeters long super flexible Mn5Si3@SiO2 electrical nanocables applicable in harsh environments.

Project description:Providing high performance electrical nano-interconnects for micro-nano electronics that are robust in harsh environments is highly demanded. Today, electrical nano-interconnects based on metallic nanowires, e.g. Ag and Cu, are limited by their positive physicochemical reactivity and ductility under large strain (i.e. irreversible dislocations and local necking-down elongation) at high temperatures or in strong oxidizing and acidic environments. Herein, to overcome these limitations, high-quality millimetre-sized soft manganese-based silicide (Mn5Si3@SiO2) nanowire nanocables are designed via a glassy Si-Mn-O matrix assisted growth. The proposed nanocables exhibit good electrical performance (resistivity of 1.28 to 3.84×10-6 ?m and maximum current density 1.22 to 3.54×107 A cm-2) at temperatures higher than 317°C in air atmosphere, strongly acidic (HCl, PH=1.0) and oxidizing (H2O2, 10%) ambient, and under complex electric field. The proposed Mn5Si3@SiO2 nanocables, which withstand a strain of 16.7% free of failure, could be exploited for diverse applications in flexible electronics and complex wiring configurations.

| S-EPMC6994472 | biostudies-literature