Antisymmetric magnetoresistance in van der Waals Fe₃GeTe₂/graphite/Fe₃GeTe₂ trilayer heterostructures.

ABSTRACT: With no requirements for lattice matching, van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next-generation spintronic devices. We report a hitherto rarely seen antisymmetric magnetoresistance (MR) effect in vdW heterostructured Fe₃GeTe₂ (FGT)/graphite/FGT devices. Unlike conventional giant MR (GMR), which is characterized by two resistance states, the MR in these vdW heterostructures features distinct high-, intermediate-, and low-resistance states. This unique characteristic is suggestive of underlying physical mechanisms that differ from those observed before. After theoretical calculations, the three-resistance behavior was attributed to a spin momentum locking induced spin-polarized current at the gr

SUBMITTER: Albarakati S 

PROVIDER: S-EPMC6611684 | biostudies-literature | 2019 Jul

REPOSITORIES: biostudies-literature