Dataset Information

A Universal Strategy for Stretchable Polymer Nonvolatile Memory via Tailoring Nanostructured Surfaces.

ABSTRACT: Building stretchable memory is an effective strategy for developing next-generation memory technologies toward stretchable and wearable electronics. Here we demonstrate a universal strategy for the fabrication of high performance stretchable polymer memory via tailoring surface morphology, in which common conjugated polymers and sharp reduced graphene oxide (r-rGO) films are used as active memristive layers and conductive electrodes, respectively. The fabricated devices feature write-once-read-many-times (WORM) memory, with a low switching voltage of 1.1?V, high ON/OFF current ratio of 104, and an ideal long retention time over 12000?s. Sharp surface-induced resistive switching behavior has been proposed to explore the electrical transition. Moreover, the polymer memory show reliable electrical bistable properties with a stretchability up to 30%, demonstrating their great potential candidates as high performance stretchable memory in soft electronics.

SUBMITTER: Ban C

PROVIDER: S-EPMC6637107 | biostudies-literature | 2019 Jul

REPOSITORIES: biostudies-literature

ACCESS DATA

Publications

A Universal Strategy for Stretchable Polymer Nonvolatile Memory via Tailoring Nanostructured Surfaces.

Ban Chaoyi C Wang Xiangjing X Zhou Zhe Z Mao Huiwu H Cheng Shuai S Zhang Zepu Z Liu Zhengdong Z Li Hai H Liu Juqing J Huang Wei W

Scientific reports 20190717 1

Building stretchable memory is an effective strategy for developing next-generation memory technologies toward stretchable and wearable electronics. Here we demonstrate a universal strategy for the fabrication of high performance stretchable polymer memory via tailoring surface morphology, in which common conjugated polymers and sharp reduced graphene oxide (r-rGO) films are used as active memristive layers and conductive electrodes, respectively. The fabricated devices feature write-once-read-m ...[more]

PMID: 31316141

Similar Datasets

Project description:Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices.

Dataset Information

A Universal Strategy for Stretchable Polymer Nonvolatile Memory via Tailoring Nanostructured Surfaces.

Publications

A Universal Strategy for Stretchable Polymer Nonvolatile Memory via Tailoring Nanostructured Surfaces.

Similar Datasets

OmicsDI is part of the ELIXIR infrastructure

Tweets