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Synthesis and Physicochemical Properties of Piceno[4,3-b:9,10-b']dithiophene Derivatives and Their Application in Organic Field-Effect Transistors.

ABSTRACT: Efficient synthesis and characterization of several piceno[4,3-b:9,10-b']dithiophene (PiDT) derivatives by Negishi coupling, epoxidation, and Lewis acid-catalyzed cycloaromatization sequences and their potential utility in organic field-effect transistors (OFETs) have been reported. PiDT derivatives, with extended ?-electron systems, showed high air stability due to their deep highest occupied molecular orbital energy levels (around -5.6 eV). OFET devices based on 2,11-dioctylated PiDT (C₈-PiDT) showed excellent hole mobility, as high as 2.36 cm² V^-1 s^-1. Their structure-property relationships were investigated by X-ray diffraction and atomic force microscopy.

SUBMITTER: Hyodo K

PROVIDER: S-EPMC6641018 | biostudies-literature | 2017 Jan

REPOSITORIES: biostudies-literature

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Synthesis and Physicochemical Properties of Piceno[4,3-b:9,10-b']dithiophene Derivatives and Their Application in Organic Field-Effect Transistors.

Hyodo Keita K Toyama Ryota R Mori Hiroki H Nishihara Yasushi Y

ACS omega 20170130 1

Efficient synthesis and characterization of several piceno[4,3-b:9,10-b']dithiophene (PiDT) derivatives by Negishi coupling, epoxidation, and Lewis acid-catalyzed cycloaromatization sequences and their potential utility in organic field-effect transistors (OFETs) have been reported. PiDT derivatives, with extended π-electron systems, showed high air stability due to their deep highest occupied molecular orbital energy levels (around -5.6 eV). OFET devices based on 2,11-dioctylated ...[more]

PMID: 31457231

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