Browse
Submit Data
Databases
API
Help

Dataset Information

26 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Tuning of the Thermoelectric Properties of Bi₂Te₃ Nanorods Using Helium Ion Irradiation.

ABSTRACT: The present study reports an enhancement of the power factor of Bi₂Te₃ nanorods NRs) by helium (He⁺) ion irradiation. High-resolution transmission electron microscopy studies revealed the formation of amorphous layers on the surface of the NRs at the high ion fluence. This amorphous nature is due to the accumulation of migrating point defect clusters at the surface of the NRs. Raman scattering experiments provide further insight to the observed structural modifications. At higher ion fluence, impurity-dominated scattering processes significantly enhance the value of the Seebeck coefficient of Bi₂Te₃ NRs. The He⁺ ion irradiation up to the ion fluence of 1 × 10¹⁶ ions/cm² improves the thermoelectric transport properties with the highest power factor, 8.2 ?W/m K², at 390 K. Further investigations may result in the possibility of fabricating the Bi₂Te₃ NRs as thermoelectric generators with a high power factor for space applications.

SUBMITTER: M S

PROVIDER: S-EPMC6643506 | biostudies-literature | 2018 Dec

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Tuning of the Thermoelectric Properties of Bi2Te3 Nanorods Using Helium Ion Irradiation.

M Sinduja S Amirthapandian S S Magudapathy P P Srivastava S K SK Asokan K K

ACS omega 20181227 12

The present study reports an enhancement of the power factor of Bi2Te3 nanorods NRs) by helium (He+) ion irradiation. High-resolution transmission electron microscopy studies revealed the formation of amorphous layers on the surface of the NRs at the high ion fluence. This amorphous nature is due to the accumulation of migrating point defect clusters at the surface of the NRs. Raman scattering experiments provide further insight to the observed structural modific ...[more]

PMID: 31458413

Similar Datasets

Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films.

Project description:The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

| S-EPMC7578806 | biostudies-literature

Enhancing thermoelectric performance by Fermi level tuning and thermal conductivity degradation in (Ge1-xBix)Te crystals.

Project description:In this work, a high thermoelectric figure of merit, zT of 1.9 at 740 K is achieved in Ge1-xBixTe crystals through the concurrent of Seebeck coefficient enhancement and thermal conductivity reduction with Bi dopants. The substitution of Bi for Ge not only compensates the superfluous hole carriers in pristine GeTe but also shifts the Fermi level (EF) to an eligible region. Experimentally, with moderate 6-10% Bi dopants, the carrier concentration is drastically decreased from 8.7 × 1020 cm-3 to 3-5 × 1020 cm-3 and the Seebeck coefficient is boosted three times to 75 μVK-1. In the meantime, based on the density functional theory (DFT) calculation, the Fermi level EF starts to intersect with the pudding mold band at L point, where the band effective mass is enhanced. The enhanced Seebeck coefficient effectively compensates the decrease of electrical conductivity and thus successfully maintain the power factor as large as or even superior than that of the pristine GeTe. In addition, the Bi doping significantly reduces both thermal conductivities of carriers and lattices to an extremely low limit of 1.57 W m-1K-1 at 740 K with 10% Bi dopants, which is an about 63% reduction as compared with that of pristine GeTe. The elevated figure of merit observed in Ge1-xBixTe specimens is therefore realized by synergistically optimizing the power factor and downgrading the thermal conductivity of alloying effect and lattice anharmonicity caused by Bi doping.

| S-EPMC6565697 | biostudies-literature

In-situ Observation of Size and Irradiation Effects on Thermoelectric Properties of Bi-Sb-Te Nanowire in FIB Trimming.

Project description:In this report, the thermoelectric properties of a Bi0.8Sb1.2Te2.9 nanowire (NW) were in-situ studied as it was trimmed from 750 down to 490 and 285 nm in diameter by a focused ion beam. While electrical and thermal conductivities both indubitably decrease with the diameter reduction, the two physical properties clearly exhibit different diameter dependent behaviors. For 750 and 490 nm NWs, much lower thermal conductivities (0.72 and 0.69 W/m-K respectively) were observed as compared with the theoretical prediction of Callaway model. The consequence indicates that in addition to the size effect, extra phonon scattering of defects created by Ga ion irradiation was attributed to the reduction of thermal conductivities. As the NW was further trimmed down to 285 nm, both the electrical and thermal conductivities exhibited a dramatic reduction which was ascribed to the formation of amorphous structure due to Ga ion irradiation. The size dependence of Seebeck coefficient and figure of merit (ZT) show the maximum at 750 nm, then decrease linearly with size decrease. The study not only provides the thoroughly understanding of the size and defect effects on the thermoelectric properties but also proposes a possible method to manipulate the thermal conductivity of NWs via ion irradiation.

| S-EPMC4814841 | biostudies-literature

Self-Tuning n-Type Bi2(Te,Se)3/SiC Thermoelectric Nanocomposites to Realize High Performances up to 300 °C.

Project description:Bi2Te3 thermoelectric materials are utilized for refrigeration for decades, while their application of energy harvesting requires stable thermoelectric and mechanical performances at elevated temperatures. This work reveals that a steady zT of ≈0.85 at 200 to 300 °C can be achieved by doping small amounts of copper iodide (CuI) in Bi2Te2.2Se0.8-silicon carbide (SiC) composites, where SiC nanodispersion enhances the flexural strength. It is found that CuI plays two important roles with atomic Cu/I dopants and CuI precipitates. The Cu/I dopants show a self-tuning behavior due to increasing solubility with increasing temperatures. The increased doping concentration increases electrical conductivity at high temperatures and effectively suppresses the intrinsic excitation. In addition, a large reduction of lattice thermal conductivity is achieved due to the "in situ" CuI nanoprecipitates acting as phonon-scattering centers. Over 60% reduction of bipolar thermal conductivity is achieved, raising the maximum useful temperature of Bi2Te3 for substantially higher efficiency. For module applications, the reported materials are suitable for segmentation with a conventional ingot. This leads to high device ZT values of ≈0.9-1.0 and high efficiency up to 9.2% from 300 to 573 K, which can be of great significance for power generation from waste heat.

| S-EPMC5700642 | biostudies-literature

3D Bi2Te3 Interconnected Nanowire Networks to Increase Thermoelectric Efficiency.

Project description:3D interconnected nanowire scaffoldings are shown to increase the thermoelectric efficiency in comparison to similar diameter 1D nanowires and films grown under similar electrodeposition conditions. Bi2Te3 3D nanonetworks offer a reduction in thermal conductivity (κT) while preserving the high electrical conductivity of the films. The reduction in κT is modeled using the hydrodynamic heat transport equation, and it can be understood as a heat viscosity effect due to the 3D nanostructuration. In addition, the Seebeck coefficient is twice that of nanowires and films, and up to 50% higher than in a single crystal. This increase is interpreted as a nonequilibrium effect that the geometry of the structure induces on the distribution function of the phonons, producing an enhanced phonon drag. These thermoelectric metamaterials have higher performance and are fabricated with large areas by a cost-effective method, which makes them suitable for up-scale production.

| S-EPMC9127787 | biostudies-literature

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi.

Project description:Chalcogenide semiconducting systems are of growing interest for mid-temperature range (~500 K) thermoelectric applications. In this work, Ge20Te77Se₃ glasses were intentionally crystallized by doping with Cu and Bi. These effectively-crystallized materials of composition (Ge20Te77Se₃)100-xMx (M = Cu or Bi; x = 5, 10, 15), obtained by vacuum-melting and quenching techniques, were found to have multiple crystalline phases and exhibit increased electrical conductivity due to excess hole concentration. These materials also have ultra-low thermal conductivity, especially the heavily-doped (Ge20Te77Se₃)100-xBix (x = 10, 15) samples, which possess lattice thermal conductivity of ~0.7 Wm-1 K-1 at 525 K due to the assumable formation of nano-precipitates rich in Bi, which are effective phonon scatterers. Owing to their high metallic behavior, Cu-doped samples did not manifest as low thermal conductivity as Bi-doped samples. The exceptionally low thermal conductivity of the Bi-doped materials did not, alone, significantly enhance the thermoelectric figure of merit, zT. The attempt to improve the thermoelectric properties by crystallizing the chalcogenide glass compositions by excess doping did not yield power factors comparable with the state of the art thermoelectric materials, as these highly electrically conductive crystallized materials could not retain the characteristic high Seebeck coefficient values of semiconducting telluride glasses.

| S-EPMC5506923 | biostudies-literature

Bi2Te3-based applied thermoelectric materials: research advances and new challenges.

Project description: Not available

| S-EPMC8290941 | biostudies-literature

Influence of Nanoparticle Processing on the Thermoelectric Properties of (Bix Sb1-X )2 Te3 Ternary Alloys.

Project description:The synthesis of phase-pure ternary solutions of tetradymite-type materials (Bix Sb1-x )2 Te3 (x=0.25; 0.50; 0.75) in an ionic liquid approach has been carried out. The nanoparticles are characterized by means of energy-dispersive X-ray spectroscopy (EDX), powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), and transmission electron microscopy. In addition, the role of different processing approaches on the thermoelectric properties - Seebeck coefficient as well as electrical and thermal conductivity - is demonstrated.

| S-EPMC7874259 | biostudies-literature

Optimizing Room-Temperature Thermoelectric Performance of n-Type Bi2Te2.7Se0.3.

Project description:Bi2Te3-based compounds are exclusive commercial thermoelectric materials around room temperature. For n-type compounds, optimal thermoelectric properties are normally obtained at temperatures higher than room temperature to suppress the bipolar effect through increased carrier concentration. We find that doping with trace amounts of Cd and the addition of excess Bi are effective ways to optimize carrier concentration and achieve enhanced room-temperature thermoelectric performance for the Bi2Te2.7Se0.3 alloy in this work. For the Cd-doped samples, the replacement of Cd with Bi leads to not only a significant decrease in electron concentration but also apparently reduces the total thermal conductivity. The addition of excess Bi in the samples creates a Bi-rich synthetic atmosphere during the synthesis process, leading to increased BiTe antisite defects, decreased electron concentration, and reduced total thermal conductivity. Doping a small amount of Cd or adding excess Bi causes optimal thermoelectric performance of the n-type Bi2Te2.7Se0.3 sample shifts obviously toward low temperatures, and the samples with 0.4 atom % Cd and 0.8 atom % excess Bi achieve maximum zT of ∼0.97 at 448 K and ∼0.88 at 348 K, respectively.

| S-EPMC8675032 | biostudies-literature

Structural Characterization and Thermoelectric Properties of Br-Doped AgSnm[Sb0.8Bi0.2]Te2+m Systems.

Project description:Herein, we report the synthesis, structural and microstructural characterization, and thermoelectric properties of AgSnm[Sb0.8Bi0.2]Te2+m and Br-doped telluride systems. These compounds were prepared by solid-state reaction at high temperature. Powder X-ray diffraction data reveal that these samples exhibit crystal structures related to the NaCl-type lattice. The microstructures and morphologies are investigated by scanning electron microscopy, energy-dispersive X-ray spectroscopy (EDS), and high-resolution transmission electron microscopy (HRTEM). Positive values of the Seebeck coefficient (S) indicate that the transport properties are dominated by holes. The S of undoped AgSnm[Sb0.8Bi0.2]Te2+m ranges from +40 to 57 μV·K-1. Br-doped samples with m = 2 show S values of +74 μV·K-1 at RT, and the Seebeck coefficient increases almost linearly with increasing temperature. The total thermal conductivity (κtot) monotonically increases with increasing temperature (10-300 K). The κtot values of undoped AgSnm[Sb0.8Bi0.2]Te2+m are ~1.8 W m-1 K-1 (m = 4) and ~1.0 W m-1 K-1 (m = 2) at 300 K. The electrical conductivity (σ) decreases almost linearly with increasing temperature, indicating metal-like behavior. The ZT value increases as a function of temperature. A maximum ZT value of ~0.07 is achieved at room temperature for the Br-doped phase with m = 4.

| S-EPMC10419848 | biostudies-literature