Ontology highlight
ABSTRACT:
SUBMITTER: Banerjee W
PROVIDER: S-EPMC6644850 | biostudies-literature | 2017 Oct
REPOSITORIES: biostudies-literature
ACS omega 20171018 10
Variability control over the resistive switching process is one of the key requirements to improve the performance stability of the resistive random access memory (RRAM) devices. In this study, we show the improvement of the variability of the resistive switching operation in the TiO <sub><i>x</i></sub> /Al<sub>2</sub>O<sub>3</sub> bilayer RRAM devices. The achievement is based on the thickness engineering of the Al<sub>2</sub>O<sub>3</sub> layer. A thick Al<sub>2</sub>O<sub>3</sub> dielectric a ...[more]