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?-Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications.


ABSTRACT: Steep-slope ?-Ga2O3 nanomembrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in the gate dielectric stack. Subthreshold slope less than 60 mV/dec at room temperature is obtained for both forward and reverse gate-voltage sweeps with a minimum value of 34.3 mV/dec at the reverse gate-voltage sweep and 53.1 mV/dec at the forward gate-voltage sweep at V DS = 0.5 V. Enhancement-mode operation with a threshold voltage of ?0.4 V is achieved by tuning the thickness of the ?-Ga2O3 membrane. Low hysteresis of less than 0.1 V is obtained. The steep-slope, low hysteresis, and enhancement-mode ?-Ga2O3 NC-FETs are promising as an nFET candidate for future wide band gap complementary metal-oxide-semiconductor logic applications.

SUBMITTER: Si M 

PROVIDER: S-EPMC6645059 | biostudies-literature | 2017 Oct

REPOSITORIES: biostudies-literature

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β-Ga<sub>2</sub>O<sub>3</sub> Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications.

Si Mengwei M   Yang Lingming L   Zhou Hong H   Ye Peide D PD  

ACS omega 20171025 10


Steep-slope β-Ga<sub>2</sub>O<sub>3</sub> nanomembrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in the gate dielectric stack. Subthreshold slope less than 60 mV/dec at room temperature is obtained for both forward and reverse gate-voltage sweeps with a minimum value of 34.3 mV/dec at the reverse gate-voltage sweep and 53.1 mV/dec at the forward gate-voltage sweep at <i>V</i> <sub>DS</sub> = 0.5 V. Enhancement-mode operati  ...[more]

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