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?-Ga₂O₃ Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications.

ABSTRACT: Steep-slope ?-Ga₂O₃ nanomembrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in the gate dielectric stack. Subthreshold slope less than 60 mV/dec at room temperature is obtained for both forward and reverse gate-voltage sweeps with a minimum value of 34.3 mV/dec at the reverse gate-voltage sweep and 53.1 mV/dec at the forward gate-voltage sweep at V _DS = 0.5 V. Enhancement-mode operation with a threshold voltage of ?0.4 V is achieved by tuning the thickness of the ?-Ga₂O₃ membrane. Low hysteresis of less than 0.1 V is obtained. The steep-slope, low hysteresis, and enhancement-mode ?-Ga₂O₃ NC-FETs are promising as an nFET candidate for future wide band gap complementary metal-oxide-semiconductor logic applications.

SUBMITTER: Si M

PROVIDER: S-EPMC6645059 | biostudies-literature | 2017 Oct

REPOSITORIES: biostudies-literature

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β-Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications.

Si Mengwei M Yang Lingming L Zhou Hong H Ye Peide D PD

ACS omega 20171025 10

Steep-slope β-Ga2O3 nanomembrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in the gate dielectric stack. Subthreshold slope less than 60 mV/dec at room temperature is obtained for both forward and reverse gate-voltage sweeps with a minimum value of 34.3 mV/dec at the reverse gate-voltage sweep and 53.1 mV/dec at the forward gate-voltage sweep at V DS = 0.5 V. Enhancement-mode operati ...[more]

PMID: 31457293

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