Browse
Submit Data
Databases
API
Help

Dataset Information

21 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

?-Ga₂O₃ Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications.

ABSTRACT: Steep-slope ?-Ga₂O₃ nanomembrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in the gate dielectric stack. Subthreshold slope less than 60 mV/dec at room temperature is obtained for both forward and reverse gate-voltage sweeps with a minimum value of 34.3 mV/dec at the reverse gate-voltage sweep and 53.1 mV/dec at the forward gate-voltage sweep at V _DS = 0.5 V. Enhancement-mode operation with a threshold voltage of ?0.4 V is achieved by tuning the thickness of the ?-Ga₂O₃ membrane. Low hysteresis of less than 0.1 V is obtained. The steep-slope, low hysteresis, and enhancement-mode ?-Ga₂O₃ NC-FETs are promising as an nFET candidate for future wide band gap complementary metal-oxide-semiconductor logic applications.

SUBMITTER: Si M

PROVIDER: S-EPMC6645059 | biostudies-literature | 2017 Oct

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

β-Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications.

Si Mengwei M Yang Lingming L Zhou Hong H Ye Peide D PD

ACS omega 20171025 10

Steep-slope β-Ga2O3 nanomembrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in the gate dielectric stack. Subthreshold slope less than 60 mV/dec at room temperature is obtained for both forward and reverse gate-voltage sweeps with a minimum value of 34.3 mV/dec at the reverse gate-voltage sweep and 53.1 mV/dec at the forward gate-voltage sweep at V DS = 0.5 V. Enhancement-mode operati ...[more]

PMID: 31457293

Similar Datasets

Is negative capacitance FET a steep-slope logic switch?

Project description:The negative-capacitance field-effect transistor(NC-FET) has attracted tremendous research efforts. However, the lack of a clear physical picture and design rule for this device has led to numerous invalid fabrications. In this work, we address this issue based on an unexpectedly concise and insightful analytical formulation of the minimum hysteresis-free subthreshold swing (SS), together with several important conclusions. Firstly, well-designed MOSFETs that have low trap density, low doping in the channel, and excellent electrostatic integrity, receive very limited benefit from NC in terms of achieving subthermionic SS. Secondly, quantum-capacitance is the limiting factor for NC-FETs to achieve hysteresis-free subthermionic SS, and FETs that can operate in the quantum-capacitance limit are desired platforms for NC-FET construction. Finally, a practical role of NC in FETs is to save the subthreshold and overdrive voltage losses. Our analysis and findings are intended to steer the NC-FET research in the right direction.

| S-EPMC6954266 | biostudies-literature

Thermodynamic Studies of β-Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate.

Project description:The self-heating effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliability. On applying an ultrafast and high-resolution thermoreflectance imaging technique, the direct self-heating effect and surface temperature increase phenomenon are observed on novel top-gate β-Ga2O3 on insulator field-effect transistors. Here, we demonstrate that by utilizing a higher thermal conductivity sapphire substrate rather than a SiO2/Si substrate, the temperature rise above room temperature of β-Ga2O3 on the insulator field-effect transistor can be reduced by a factor of 3 and thereby the self-heating effect is significantly reduced. Both thermoreflectance characterization and simulation verify that the thermal resistance on the sapphire substrate is less than 1/3 of that on the SiO2/Si substrate. Therefore, maximum drain current density of 535 mA/mm is achieved on the sapphire substrate, which is 70% higher than that on the SiO2/Si substrate due to reduced self-heating. Integration of β-Ga2O3 channel on a higher thermal conductivity substrate opens a new route to address the low thermal conductivity issue of β-Ga2O3 for power electronics applications.

| S-EPMC6645553 | biostudies-literature

Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor.

Project description:Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44?mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at -0.5?V showing ultra-low operating voltage with the highest mobility (250.5?cm(2)/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature.

| S-EPMC4838852 | biostudies-other

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor.

Project description:Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursued approaches to achieve such a subthermionic subthreshold swing consist in alternative carrier injection mechanisms, like quantum mechanical band-to-band tunneling (BTBT) in Tunnel FETs or abrupt phase-change in metal-insulator transition (MIT) devices. The strengths of the BTBT and MIT have been combined in a hybrid device architecture called phase-change tunnel FET (PC-TFET), in which the abrupt MIT in vanadium dioxide (VO2) lowers the subthreshold swing of strained-silicon nanowire TFETs. In this work, we demonstrate that the principle underlying the low swing in the PC-TFET relates to a sub-unity body factor achieved by an internal differential gate voltage amplification. We study the effect of temperature on the switching ratio and the swing of the PC-TFET, reporting values as low as 4.0 mV/decade at 25 °C, 7.8 mV/decade at 45 °C. We discuss how the unique characteristics of the PC-TFET open new perspectives, beyond FETs and other steep-slope transistors, for low power electronics, analog circuits and neuromorphic computing.

| S-EPMC5428222 | biostudies-literature

ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior.

Project description:Here we report the ZrOx-based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V VGS range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrOx/TaN capacitors is proposed to be originated from the oxygen vacancy dipoles. The NC effect of the amorphous HfO2 and ZrOx films devices can be proved by the sudden drop of gate leakage, the negative differential resistance (NDR) phenomenon, the enhancement of IDS and sub-60 subthreshold swing. 5 nm ZrOx-based NCFETs achieve a clockwise hysteresis of 0.24 V, lower than 60 mV/decade SS and an 12% IDS enhancement compared to the control device without ZrOx. The suppressed NC effect of Al2O3/HfO2 NCFET compared with ZrOx NCFET is related to the partial switching of oxygen vacancy dipoles in the forward sweeping due to negative interfacial dipoles at the Al2O3/HfO2 interface.

| S-EPMC7855158 | biostudies-literature

All-2D ReS2 transistors with split gates for logic circuitry.

Project description:Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides (TMDs) and black phosphorus, are the most promising channel materials for future electronics because of their unique electrical properties. Even though a number of 2D-materials-based logic devices have been demonstrated to date, most of them are a combination of more than two unit devices. If logic devices can be realized in a single channel, it would be advantageous for higher integration and functionality. In this study we report high-performance van der Waals heterostructure (vdW) ReS2 transistors with graphene electrodes on atomically flat hBN, and demonstrate a NAND gate comprising a single ReS2 transistor with split gates. Highly sensitive electrostatic doping of ReS2 enables fabrication of gate-tunable NAND logic gates, which cannot be achieved in bulk semiconductor materials because of the absence of gate tunability. The vdW heterostructure NAND gate comprising a single transistor paves a novel way to realize "all-2D" circuitry for flexible and transparent electronic applications.

| S-EPMC6637167 | biostudies-literature

Van der Waals negative capacitance transistors.

Project description:The Boltzmann distribution of electrons sets a fundamental barrier to lowering energy consumption in metal-oxide-semiconductor field-effect transistors (MOSFETs). Negative capacitance FET (NC-FET), as an emerging FET architecture, is promising to overcome this thermionic limit and build ultra-low-power consuming electronics. Here, we demonstrate steep-slope NC-FETs based on two-dimensional molybdenum disulfide and CuInP2S6 (CIPS) van der Waals (vdW) heterostructure. The vdW NC-FET provides an average subthreshold swing (SS) less than the Boltzmann's limit for over seven decades of drain current, with a minimum SS of 28 mV dec-1. Negligible hysteresis is achieved in NC-FETs with the thickness of CIPS less than 20 nm. A voltage gain of 24 is measured for vdW NC-FET logic inverter. Flexible vdW NC-FET is further demonstrated with sub-60 mV dec-1 switching characteristics under the bending radius down to 3.8 mm. These results demonstrate the great potential of vdW NC-FET for ultra-low-power and flexible applications.

| S-EPMC6620276 | biostudies-literature

Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope

Project description:Description van der Waals metal gate to two-dimensional semiconductors enables low-power electronic devices. Ultrathin two-dimensional (2D) semiconductors are regarded as a potential channel material for low-power transistors with small subthreshold swing and low leakage current. However, their dangling bond–free surface makes it extremely difficult to deposit gate dielectrics with high-quality interface in metal-oxide-semiconductor (MOS) field-effect transistors (FETs). Here, we demonstrate a low-temperature process to transfer metal gate to 2D MoS2 for high-quality interface. By excluding extrinsic doping to MoS2 and increasing contact distance, the high–barrier height Pt-MoS2 Schottky junction replaces the commonly used MOS capacitor and eliminates the use of gate dielectrics. The MoS2 transferred metal gate (TMG) FETs exhibit sub-1 V operation voltage and a subthreshold slope close to thermal limit (60 mV/dec), owing to intrinsically high junction capacitance and the high-quality interface. The TMG and back gate enable logic functions in a single transistor with small footprint.

| S-EPMC8550226 | biostudies-literature

A steep-slope transistor based on abrupt electronic phase transition.

Project description:Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance transistors have experienced little success. Here, we demonstrate a pathway for harnessing the abrupt resistivity transformation across the insulator-to-metal transition in vanadium dioxide (VO2), to design a hybrid-phase-transition field-effect transistor that exhibits gate controlled steep ('sub-kT/q') and reversible switching at room temperature. The transistor design, wherein VO2 is implemented in series with the field-effect transistor's source rather than into the channel, exploits negative differential resistance induced across the VO2 to create an internal amplifier that facilitates enhanced performance over a conventional field-effect transistor. Our approach enables low-voltage complementary n-type and p-type transistor operation as demonstrated here, and is applicable to other insulator-to-metal transition materials, offering tantalizing possibilities for energy-efficient logic and memory applications.

| S-EPMC4918311 | biostudies-other

Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu2O and Nanomembrane β-Ga2O3 pn Oxide Heterojunction.

Project description:Herein, we present a solar-blind ultraviolet photodetector realized using atomic layer-deposited p-type cuprous oxide (Cu2O) underneath a mechanically exfoliated n-type β-gallium oxide (β-Ga2O3) nanomembrane. The atomic layer deposition process of the Cu2O film applies bis(N,N'-di-secbutylacetamidinato)dicopper(I) [Cu(5Bu-Me-amd)]2 as a novel Cu precursor and water vapor as an oxidant. The exfoliated β-Ga2O3 nanomembrane was transferred to the top of the Cu2O layer surface to realize a unique oxide pn heterojunction, which is not easy to realize by conventional oxide epitaxy techniques. The current-voltage (I-V) characteristics of the fabricated pn heterojunction diode show the typical rectifying behavior. The fabricated Cu2O/β-Ga2O3 photodetector achieves sensitive detection of current at the picoampere scale in the reverse mode. This work provides a new approach to integrate all oxide heterojunctions using membrane transfer and bonding techniques, which goes beyond the limitation of conventional heteroepitaxy.

| S-EPMC6906937 | biostudies-literature