Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing.

ABSTRACT: Remarkable improvements in both structural and optical properties of wafer-scale hexagonal boron nitride (h-BN) films grown by metal-organic chemical vapor deposition (MOCVD) enabled by high-temperature post-growth annealing is presented. The enhanced crystallinity and homogeneity of the MOCVD-grown h-BN films grown at 1050?°C is attributed to the solid-state atomic rearrangement during the thermal annealing at 1600?°C. In addition, the appearance of the photoluminescence by excitonic transitions as well as enlarged optical band gap were observed for the post-annealed h-BN films as direct consequences of the microstructural improvement. The post-growth annealing is a very promising strategy to overcome limited crystallinity of h-BN films grown by typical MOCVD systems while maintaining their advantage of multiple wafer scalability for practical applications towards two-dimensional electronics and optoelectronics.

SUBMITTER: Lee SH 

PROVIDER: S-EPMC6646322 | biostudies-literature | 2019 Jul

REPOSITORIES: biostudies-literature