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Tunability of MoO3 Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission.


ABSTRACT: The chemical and electronic structure of MoO3 thin films is monitored by synchrotron-based hard X-ray photoelectron spectroscopy while annealing from room temperature to 310 °C. Color-coded 2D intensity maps of the Mo 3d and O 1s and valence band maximum (VBM) spectra show the evolution of the annealing-induced changes. Broadening of the Mo 3d and O 1s spectra indicate the reduction of MoO3. At moderate temperatures (120-200 °C), we find spectral evidence for the formation of Mo5+ and at higher temperatures (>165 °C) also of Mo4+ states. These states can be related to the spectral intensity above the VBM attributed to O vacancy induced gap states caused by partial filling of initially unoccupied Mo 4d-derived states. A clear relation between annealing temperature and the induced changes in the chemical and electronic structure suggests this approach as a route for deliberate tuning of MoO3 thin-film properties.

SUBMITTER: Liao X 

PROVIDER: S-EPMC6648274 | biostudies-literature | 2019 Jun

REPOSITORIES: biostudies-literature

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Tunability of MoO<sub>3</sub> Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission.

Liao Xiaxia X   Jeong Ah Reum AR   Wilks Regan G RG   Wiesner Sven S   Rusu Marin M   Félix Roberto R   Xiao Ting T   Hartmann Claudia C   Bär Marcus M  

ACS omega 20190624 6


The chemical and electronic structure of MoO<sub>3</sub> thin films is monitored by synchrotron-based hard X-ray photoelectron spectroscopy while annealing from room temperature to 310 °C. Color-coded 2D intensity maps of the Mo 3d and O 1s and valence band maximum (VBM) spectra show the evolution of the annealing-induced changes. Broadening of the Mo 3d and O 1s spectra indicate the reduction of MoO<sub>3</sub>. At moderate temperatures (120-200 °C), we find spectral evidence for the formation  ...[more]

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