Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization.

ABSTRACT: Ferroelectric engineered pn doping in two-dimensional (2D) semiconductors hold essential promise in realizing customized functional devices in a reconfigurable manner. Here, we report the successful pn doping in molybdenum disulfide (MoS₂) optoelectronic device by local patterned ferroelectric polarization, and its configuration into lateral diode and npn bipolar phototransistors for photodetection from such a versatile playground. The lateral pn diode formed in this way manifests efficient self-powered detection by separating ~12% photo-generated electrons and holes. When polarized as bipolar phototransistor, the device is customized with a gain ~1000 by its transistor action, reaching the responsivity ~12?A?W^-1 and detectivity over 10¹³ Jones while keeping a fast response speed within 20 ?s. A promising pathway toward high performance optoelectronics is thus opened up based on local ferroelectric polarization coupled 2D semiconductors.

SUBMITTER: Lv L 

PROVIDER: S-EPMC6659647 | biostudies-literature | 2019 Jul

REPOSITORIES: biostudies-literature