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Initial Growth Study of Atomic-Layer Deposition of Al2O3 by Vibrational Sum-Frequency Generation.


ABSTRACT: The initial growth during the atomic-layer deposition (ALD) of Al2O3 using trimethylaluminum (TMA) and water was studied on two starting surfaces: SiO2 and -H-terminated Si(111) [H/Si(111)]. In situ spectroscopy ellipsometry (SE) showed virtually immediate growth of Al2O3 on both surfaces, although for H/Si(111) a reduced growth-per-cycle was observed in the initial 20 cycles. The underlying surface chemistry during the initial cycles of ALD was monitored with in situ broadband sum-frequency generation (BB-SFG) spectroscopy. For the SiO2 surface, the -CH3 surface groups were followed revealing that only the first TMA half-cycle deviates from the steady-growth regime. The reaction cross section of the initial TMA half-cycle (?TMA = 2.0 ± 0.2 × 10-18 cm2) was a factor of 3 lower than the cross section of the TMA half-cycle during the steady-growth regime of ALD (?TMA = 6.5 ± 0.6 × 10-18 cm2). All H2O half-cycles, including the first, showed steady-growth behavior with a corresponding reaction cross section (?H2O = 4.0 ± 0.4 × 10-20 cm2). Therefore, only the first ALD cycle was affected by initial growth effects on the SiO2 starting surface, in line with the SE data. For the H/Si(111) surface, the Si-H groups were monitored with BB-SFG spectroscopy, revealing a reaction cross section of ?TMA = 3.1 ± 0.3 × 10-18 cm2 for the first TMA half-cycle on H/Si(111); a factor two lower than that during the steady regime of Al2O3. These results demonstrate that the chemistry during the initial growth regime of Al2O3 ALD on SiO2 and H/Si(111) shows subtle but measurable differences compared to the steady-growth regime.

SUBMITTER: Vandalon V 

PROVIDER: S-EPMC6694409 | biostudies-literature | 2019 Aug

REPOSITORIES: biostudies-literature

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Initial Growth Study of Atomic-Layer Deposition of Al<sub>2</sub>O<sub>3</sub> by Vibrational Sum-Frequency Generation.

Vandalon V V   Kessels W M M Erwin WMME  

Langmuir : the ACS journal of surfaces and colloids 20190730 32


The initial growth during the atomic-layer deposition (ALD) of Al<sub>2</sub>O<sub>3</sub> using trimethylaluminum (TMA) and water was studied on two starting surfaces: SiO<sub>2</sub> and -H-terminated Si(111) [H/Si(111)]. In situ spectroscopy ellipsometry (SE) showed virtually immediate growth of Al<sub>2</sub>O<sub>3</sub> on both surfaces, although for H/Si(111) a reduced growth-per-cycle was observed in the initial 20 cycles. The underlying surface chemistry during the initial cycles of ALD  ...[more]

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