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Enhancing photoelectrochemical water splitting by combining work function tuning and heterojunction engineering.


ABSTRACT: We herein demonstrate the unusual effectiveness of two strategies in combination to enhance photoelectrochemical water splitting. First, the work function adjustment via molybdenum (Mo) doping significantly reduces the interfacial energy loss and increases the open-circuit photovoltage of bismuth vanadate (BiVO4) photoelectrochemical cells. Second, the creation and optimization of the heterojunction of boron (B) doping carbon nitride (C3N4) and Mo doping BiVO4 to enforce directional charge transfer, accomplished by work function adjustment via B doping for C3N4, substantially boost the charge separation of photo-generated electron-hole pairs at the B-C3N4 and Mo-BiVO4 interface. The synergy between the above efforts have significantly reduced the onset potential, and enhanced charge separation and optical properties of the BiVO4-based photoanode, culminating in achieving a record applied bias photon-to-current efficiency of 2.67% at 0.54?V vs. the reversible hydrogen electrode. This work sheds light on designing and fabricating the semiconductor structures for the next-generation photoelectrodes.

SUBMITTER: Ye KH 

PROVIDER: S-EPMC6695449 | biostudies-literature | 2019 Aug

REPOSITORIES: biostudies-literature

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Enhancing photoelectrochemical water splitting by combining work function tuning and heterojunction engineering.

Ye Kai-Hang KH   Li Haibo H   Huang Duan D   Xiao Shuang S   Qiu Weitao W   Li Mingyang M   Hu Yuwen Y   Mai Wenjie W   Ji Hongbing H   Yang Shihe S  

Nature communications 20190815 1


We herein demonstrate the unusual effectiveness of two strategies in combination to enhance photoelectrochemical water splitting. First, the work function adjustment via molybdenum (Mo) doping significantly reduces the interfacial energy loss and increases the open-circuit photovoltage of bismuth vanadate (BiVO<sub>4</sub>) photoelectrochemical cells. Second, the creation and optimization of the heterojunction of boron (B) doping carbon nitride (C<sub>3</sub>N<sub>4</sub>) and Mo doping BiVO<sub  ...[more]

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