Double Pinned Perpendicular-Magnetic-Tunnel-Junction Spin-Valve Providing Multi-level Resistance States.

ABSTRACT: A new design for high density integration greater than gigabits of perpendicular-magnetic-tunnel-junction (p-MTJ) spin-valve, called the double pinned (i.e., bottom and top pinned structures) p-MTJ spin-valve achieved a multi-level memory-cell operation exhibiting four-level resistances. Three key magnetic properties, the anisotropy exchange field (H_ex) of the bottom pinned structure, the coercivity (H_c) of the double free-layer, and the H_c of the top pinned structure mainly determined four-level resistances producing tunneling-magnetoresistance (TMR) ratios of 152.6%, 33.6%, and 166.5%. The three key-design concepts are: i) the bottom pinned structure with a sufficiently large H_ex to avoid a write-error, ii) the H_c of the double free-

SUBMITTER: Choi JY 

PROVIDER: S-EPMC6695488 | biostudies-literature | 2019 Aug

REPOSITORIES: biostudies-literature