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Low-Noise Mid-Infrared Photodetection in BP/h-BN/Graphene van der Waals Heterojunctions.

ABSTRACT: We present a low-noise photodetector based on van der Waals stacked black phosphorus (BP)/boron nitride (h-BN)/graphene tunneling junctions. h-BN acts as a tunneling barrier that significantly blocks dark current fluctuations induced by shallow trap centers in BP. The device provides a high photodetection performance at mid-infrared (mid-IR) wavelengths. While it was found that the photoresponsivity is similar to that in a BP photo-transistor, the noise equivalent power and thus the specific detectivity are nearly two orders of magnitude better. These exemplify an attractive platform for practical applications of long wavelength photodetection, as well as provide a new strategy for controlling flicker noise.

SUBMITTER: Lu Q

PROVIDER: S-EPMC6720574 | biostudies-literature | 2019 Aug

REPOSITORIES: biostudies-literature

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Low-Noise Mid-Infrared Photodetection in BP/h-BN/Graphene van der Waals Heterojunctions.

Lu Qin Q Yu Li L Liu Yan Y Zhang Jincheng J Han Genquan G Hao Yue Y

Materials (Basel, Switzerland) 20190809 16

We present a low-noise photodetector based on van der Waals stacked black phosphorus (BP)/boron nitride (h-BN)/graphene tunneling junctions. h-BN acts as a tunneling barrier that significantly blocks dark current fluctuations induced by shallow trap centers in BP. The device provides a high photodetection performance at mid-infrared (mid-IR) wavelengths. While it was found that the photoresponsivity is similar to that in a BP photo-transistor, the noise equivalent power and thus the specific det ...[more]

PMID: 31395796

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