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Fabrication and Characteristics of Heavily Fe-Doped LiNbO3/Si Heterojunction.

ABSTRACT: A series of heavily Fe-doped LiNbO3 (LN:Fe) crystals were grown via the Czochralski method. The dark- and photo-conductivity of the 5.0 wt.% Fe-doped LiNbO3 crystal reached 3.30 × 10-8 ?-1 cm-1 and 1.46 × 10-7 ?-1 cm-1 at 473 nm, which are about 7 and 5 orders of magnitude higher than that of congruent LiNbO3, respectively. Then, a p-n heterojunction was fabricated by depositing the heavily Fe-doped LiNbO3 on a p-type Si substrate using the pulsed laser deposition. The current-voltage curve of the LN:Fe/Si heterojunction presents a well-defined behavior with a turn-on voltage of 2.9 V. This LN:Fe/Si heterojunction gives an excellent prototype device for integrated optics and electro-photonics.

SUBMITTER: Li W

PROVIDER: S-EPMC6747580 | biostudies-literature | 2019 Aug

REPOSITORIES: biostudies-literature

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Fabrication and Characteristics of Heavily Fe-Doped LiNbO3/Si Heterojunction.

Li Wencan W Cui Jiao J Zheng Dahuai D Wang Weiwei W Wang Shuolin S Song Shaoqing S Liu Hongde H Kong Yongfa Y Xu Jingjun J

Materials (Basel, Switzerland) 20190821 17

A series of heavily Fe-doped LiNbO3 (LN:Fe) crystals were grown via the Czochralski method. The dark- and photo-conductivity of the 5.0 wt.% Fe-doped LiNbO3 crystal reached 3.30 × 10-8 Ω-1 cm-1 and 1.46 × 10-7 Ω-1 cm-1 at 473 nm, which are about 7 and 5 orders of magnitude higher than that of congruent LiNbO3, respectively. Then, a p-n heterojunction was fabricated by depositing the heavily Fe-dope ...[more]

PMID: 31438556

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