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Fabrication and Characteristics of Heavily Fe-Doped LiNbO3/Si Heterojunction.


ABSTRACT: A series of heavily Fe-doped LiNbO3 (LN:Fe) crystals were grown via the Czochralski method. The dark- and photo-conductivity of the 5.0 wt.% Fe-doped LiNbO3 crystal reached 3.30 × 10-8 ?-1 cm-1 and 1.46 × 10-7 ?-1 cm-1 at 473 nm, which are about 7 and 5 orders of magnitude higher than that of congruent LiNbO3, respectively. Then, a p-n heterojunction was fabricated by depositing the heavily Fe-doped LiNbO3 on a p-type Si substrate using the pulsed laser deposition. The current-voltage curve of the LN:Fe/Si heterojunction presents a well-defined behavior with a turn-on voltage of 2.9 V. This LN:Fe/Si heterojunction gives an excellent prototype device for integrated optics and electro-photonics.

SUBMITTER: Li W 

PROVIDER: S-EPMC6747580 | biostudies-literature | 2019 Aug

REPOSITORIES: biostudies-literature

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Fabrication and Characteristics of Heavily Fe-Doped LiNbO<sub>3</sub>/Si Heterojunction.

Li Wencan W   Cui Jiao J   Zheng Dahuai D   Wang Weiwei W   Wang Shuolin S   Song Shaoqing S   Liu Hongde H   Kong Yongfa Y   Xu Jingjun J  

Materials (Basel, Switzerland) 20190821 17


A series of heavily Fe-doped LiNbO<sub>3</sub> (LN:Fe) crystals were grown via the Czochralski method. The dark- and photo-conductivity of the 5.0 wt.% Fe-doped LiNbO<sub>3</sub> crystal reached 3.30 × 10<sup>-8</sup> Ω<sup>-1</sup> cm<sup>-1</sup> and 1.46 × 10<sup>-7</sup> Ω<sup>-1</sup> cm<sup>-1</sup> at 473 nm, which are about 7 and 5 orders of magnitude higher than that of congruent LiNbO<sub>3</sub>, respectively. Then, a p-n heterojunction was fabricated by depositing the heavily Fe-dope  ...[more]

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