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Phase stability and thermoelectric properties of semiconductor-like tetragonal FeAl2.


ABSTRACT: Tetragonal FeAl2 is a high-pressure phase and is predicted to exhibit semiconductor-like behavior. We investigated the pressure and temperature synthesizing conditions of tetragonal FeAl2, supported by in situ X-ray diffractions, using synchrotron radiation during heating the sample under a pressure of 20 GPa. Based on the determined optimal conditions, we synthesized the bulk polycrystalline samples of tetragonal FeAl2 at 7.5 GPa and 873 K, using a multi-anvil press and measured its thermoelectric properties. The Seebeck coefficient of tetragonal FeAl2 showed a large negative value of - 105 ?V/K at 155 K and rapidly changed to a positive value of 75 ?V/K at 400 K. Although these values are the largest among those of Fe-Al alloys, the maximum power factor remained at 0.41 mW/mK2 because the carrier concentration was not tuned. A comparison of the Gibbs free energy of tetragonal FeAl2, triclinic FeAl2 and FeAl+Fe2Al5 revealed that tetragonal FeAl2 became unstable as the temperature increased, because of its smaller contribution of vibrational entropy.

SUBMITTER: Tobita K 

PROVIDER: S-EPMC6764376 | biostudies-literature | 2019

REPOSITORIES: biostudies-literature

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Phase stability and thermoelectric properties of semiconductor-like tetragonal FeAl<sub>2</sub>.

Tobita Kazuki K   Kitahara Koichi K   Katsura Yukari Y   Sato Naoki N   Nishio-Hamane Daisuke D   Gotou Hirotada H   Kimura Kaoru K  

Science and technology of advanced materials 20190902 1


Tetragonal FeAl<sub>2</sub> is a high-pressure phase and is predicted to exhibit semiconductor-like behavior. We investigated the pressure and temperature synthesizing conditions of tetragonal FeAl<sub>2</sub>, supported by <i>in situ</i> X-ray diffractions, using synchrotron radiation during heating the sample under a pressure of 20 GPa. Based on the determined optimal conditions, we synthesized the bulk polycrystalline samples of tetragonal FeAl<sub>2</sub> at 7.5 GPa and 873 K, using a multi-  ...[more]

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