Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

In Operando Characterization and Control over Intermittent Light Emission from Molecular Tunnel Junctions via Molecular Backbone Rigidity.

ABSTRACT: In principle, excitation of surface plasmons by molecular tunnel junctions can be controlled at the molecular level. Stable electrical excitation sources of surface plasmons are therefore desirable. Herein, molecular junctions are reported where tunneling charge carriers excite surface plasmons in the gold bottom electrodes via inelastic tunneling and it is shown that the intermittent light emission (blinking) originates from conformational dynamics of the molecules. The blinking rates, in turn, are controlled by changing the rigidity of the molecular backbone. Power spectral density analysis shows that molecular junctions with flexible aliphatic molecules blink, while junctions with rigid aromatic molecules do not.

SUBMITTER: Wang T

PROVIDER: S-EPMC6794720 | biostudies-literature | 2019 Oct

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

In Operando Characterization and Control over Intermittent Light Emission from Molecular Tunnel Junctions via Molecular Backbone Rigidity.

Wang Tao T Du Wei W Tomczak Nikodem N Wang Lejia L Nijhuis Christian A CA

Advanced science (Weinheim, Baden-Wurttemberg, Germany) 20190822 20

In principle, excitation of surface plasmons by molecular tunnel junctions can be controlled at the molecular level. Stable electrical excitation sources of surface plasmons are therefore desirable. Herein, molecular junctions are reported where tunneling charge carriers excite surface plasmons in the gold bottom electrodes via inelastic tunneling and it is shown that the intermittent light emission (blinking) originates from conformational dynamics of the molecules. The blinking rates, in turn, ...[more]

PMID: 31637155

Similar Datasets

Light Emission in Metal-Semiconductor Tunnel Junctions: Direct Evidence for Electron Heating by Plasmon Decay.

Project description:We study metal-insulator-semiconductor tunnel junctions where the metal electrode is a patterned gold layer, the insulator is a thin layer of Al2O3, and the semiconductor is p-type silicon. We observe light emission due to plasmon-assisted inelastic tunneling from the metal to the silicon valence band. The emission cutoff shifts to higher energies with increasing voltage, a clear signature of electrically driven plasmons. The cutoff energy exceeds the applied voltage, and a large fraction of the emission is above the threshold, ℏω > eV. We find that the emission spectrum manifests the Fermi-Dirac distribution of the electrons in the gold electrode. This distribution can be used to determine the effective electron temperature, Te, which is shown to have a linear dependence on the applied voltage. The strong correlation of Te with the plasmon energy serves as evidence that the mechanism for heating the electrons is plasmon decay at the source metal electrode.

| S-EPMC7883388 | biostudies-literature

Palladium electrodes for molecular tunnel junctions.

Project description:Gold has been the metal of choice for research on molecular tunneling junctions, but it is incompatible with complementary metal-oxide-semiconductor fabrication because it forms deep level traps in silicon. Palladium electrodes do not contaminate silicon, and also give higher tunnel current signals in the molecular tunnel junctions that we have studied. The result is cleaner signals in a recognition-tunneling junction that recognizes the four natural DNA bases as well as 5-methyl cytosine, with no spurious background signals. More than 75% of all the recorded signal peaks indicate the base correctly.

| S-EPMC3501205 | biostudies-literature

Tunable directional emission from electrically driven nano-strip metal-insulator-metal tunnel junctions.

Project description:Electrically driven nanoantennas for on-chip generation and manipulation of light have attracted significant attention in recent times. Metal-insulator-metal (MIM) tunnel junctions have been extensively used to electrically excite surface plasmons and photons via inelastic electron tunneling. However, the dynamic switching of light from MIM junctions into spatially separate channels has not been shown. Here, we numerically demonstrate switchable, highly directional light emission from electrically driven nano-strip Ag-SiO2-Ag tunnel junctions. The top electrode of our Ag-SiO2-Ag stack is divided into 16 nano-strips, with two of the tunnel junctions at the centre (S L and S R) acting as sources. Using full-wave electromagnetic simulations, we show that when S L is excited, the emission is highly directional with an angle of emission of -30° and an angular spread of ∼11°. When the excitation is switched to S R, the emission is redirected to an angle of 30° with an identical angular spread. A directivity of 29.4 is achieved in the forward direction, with a forward-to-backward ratio of 12. We also demonstrate wavelength-selective directional switching by changing the width, and thereby the resonance wavelength, of the sources. The emission can be tuned by varying the periodicity of the structure, paving the way for electrically driven, reconfigurable light sources.

| S-EPMC9400511 | biostudies-literature

Ultraviolet-B Resonant-Cavity Light-Emitting Diodes with Tunnel Junctions and Dielectric Mirrors.

Project description:We demonstrate the first electrically injected AlGaN-based ultraviolet-B resonant-cavity light-emitting diode (RCLED). The devices feature dielectric SiO2/HfO2 distributed Bragg reflectors enabled by tunnel junctions (TJs) for lateral current spreading. A highly doped n++-AlGaN/n++-GaN/p++-AlGaN TJ and a top n-AlGaN current spreading layer are used as transparent contacts, resulting in a good current spreading up to an active region mesa diameter of 120 μm. To access the N-face side of the device, the substrate is removed by electrochemically etching a sacrificial n-AlGaN layer, leading to a smooth underetched surface without evident parasitic etching in the n- and n++-doped layers of the device. The RCLEDs show a narrow emission spectrum with a full width at half-maximum (FWHM) of 4.3 nm compared to 9.4 nm for an ordinary LED and a more directional emission pattern with an angular FWHM of 52° for the resonance at 310 nm in comparison to ∼126° for an LED. Additionally, the RCLEDs show a much more stable emission spectrum with temperature with a red-shift of the electroluminescence peak of about ∼18 pm/K and a negligible change of the FWHM compared to LEDs, which shift ∼30 pm/K and show spectrum broadening with temperature. The demonstration of those devices, where a highly reflective mirror is spatially separated from an ohmic metal contact, opens up a new design space to potentially increase the poor light extraction efficiency in UV LEDs and is an important step toward electrically injected UV vertical-cavity surface-emitting lasers.

| S-EPMC11342380 | biostudies-literature

Functional ferroelectric tunnel junctions on silicon.

Project description:The quest for solid state non-volatility memory devices on silicon with high storage density, high speed, low power consumption has attracted intense research on new materials and novel device architectures. Although flash memory dominates in the non-volatile memory market currently, it has drawbacks, such as low operation speed, and limited cycle endurance, which prevents it from becoming the "universal memory". In this report, we demonstrate ferroelectric tunnel junctions (Pt/BaTiO3/La0.67Sr0.33MnO3) epitaxially grown on silicon substrates. X-ray diffraction spectra and high resolution transmission electron microscope images prove the high epitaxial quality of the single crystal perovskite films grown on silicon. Furthermore, the write speed, data retention and fatigue properties of the device compare favorably with flash memories. The results prove that the silicon-based ferroelectric tunnel junction is a very promising candidate for application in future non-volatile memories.

| S-EPMC4517170 | biostudies-literature

Giant Electroresistance in Ferroionic Tunnel Junctions.

Project description:Oxide-based resistive switching devices, including ferroelectric tunnel junctions and resistance random access memory, are promising candidates for the next-generation non-volatile memory technology. In this work, we propose a ferroionic tunnel junction to realize a giant electroresistance. It functions as a ferroelectric tunnel junction at low resistance state and as a Schottky junction at high resistance state, due to interface engineering through the field-induced migration of oxygen vacancies. An extremely large electroresistance with ON/OFF ratios of 5.1×107 at room temperature and 2.1×109 at 10 K is achieved, using an ultrathin BaTiO3-δ layer as the ferroelectric barrier and a semiconducting Nb-doped SrTiO3 substrate as the bottom electrode. The results point toward an appealing way for the design of high-performance resistive switching devices based on ultrathin oxide heterostructures by ionic controlled interface engineering.

| S-EPMC6584484 | biostudies-literature

Quasiparticle tunnel electroresistance in superconducting junctions.

Project description:The term tunnel electroresistance (TER) denotes a fast, non-volatile, reversible resistance switching triggered by voltage pulses in ferroelectric tunnel junctions. It is explained by subtle mechanisms connected to the voltage-induced reversal of the ferroelectric polarization. Here we demonstrate that effects functionally indistinguishable from the TER can be produced in a simpler junction scheme-a direct contact between a metal and an oxide-through a different mechanism: a reversible redox reaction that modifies the oxide's ground-state. This is shown in junctions based on a cuprate superconductor, whose ground-state is sensitive to the oxygen stoichiometry and can be tracked in operando via changes in the conductance spectra. Furthermore, we find that electrochemistry is the governing mechanism even if a ferroelectric is placed between the metal and the oxide. Finally, we extend the concept of electroresistance to the tunnelling of superconducting quasiparticles, for which the switching effects are much stronger than for normal electrons. Besides providing crucial understanding, our results provide a basis for non-volatile Josephson memory devices.

| S-EPMC6994500 | biostudies-literature

Scanning tunnelling microscope light emission: Finite temperature current noise and over cut-off emission.

Project description:The spectral distribution of light emitted from a scanning tunnelling microscope junction not only bears its intrinsic plasmonic signature but is also imprinted with the characteristics of optical frequency fluc- tuations of the tunnel current. Experimental spectra from gold-gold tunnel junctions are presented that show a strong bias (V b ) dependence, curiously with emission at energies higher than the quantum cut-off (eV b ); a component that decays monotonically with increasing bias. The spectral evolution is explained by developing a theoretical model for the power spectral density of tunnel current fluctuations, incorporating finite temperature contribution through consideration of the quantum transport in the system. Notably, the observed decay of the over cut-off emission is found to be critically associated with, and well explained in terms of the variation in junction conductance with V b . The investigation highlights the scope of plasmon-mediated light emission as a unique probe of high frequency fluctuations in electronic systems that are fundamental to the electrical generation and control of plasmons.

| S-EPMC5471255 | biostudies-literature

Operando Surface Characterization of InP Nanowire p-n Junctions.

Project description:We present an in-depth analysis of the surface band alignment and local potential distribution of InP nanowires containing a p-n junction using scanning probe and photoelectron microscopy techniques. The depletion region is localized to a 15 nm thin surface region by scanning tunneling spectroscopy and an electronic shift of up to 0.5 eV between the n- and p-doped nanowire segments was observed and confirmed by Kelvin probe force microscopy. Scanning photoelectron microscopy then allowed us to measure the intrinsic chemical shift of the In 3d, In 4d, and P 2p core level spectra along the nanowire and the effect of operating the nanowire diode in forward and reverse bias on these shifts. Thanks to the high-resolution techniques utilized, we observe fluctuations in the potential and chemical energy of the surface along the nanowire in great detail, exposing the sensitive nature of nanodevices to small scale structural variations.

| S-EPMC7025757 | biostudies-literature

Plasmonic tunnel junctions for single-molecule redox chemistry.

Project description:Nanoparticles attached just above a flat metallic surface can trap optical fields in the nanoscale gap. This enables local spectroscopy of a few molecules within each coupled plasmonic hotspot, with near thousand-fold enhancement of the incident fields. As a result of non-radiative relaxation pathways, the plasmons in such sub-nanometre cavities generate hot charge carriers, which can catalyse chemical reactions or induce redox processes in molecules located within the plasmonic hotspots. Here, surface-enhanced Raman spectroscopy allows us to track these hot-electron-induced chemical reduction processes in a series of different aromatic molecules. We demonstrate that by increasing the tunnelling barrier height and the dephasing strength, a transition from coherent to hopping electron transport occurs, enabling observation of redox processes in real time at the single-molecule level.

| S-EPMC5714966 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data