Ultrasensitive MoS₂ photodetector by serial nano-bridge multi-heterojunction.

ABSTRACT: The recent reports of various photodetectors based on molybdenum disulfide (MoS₂) field effect transistors showed that it was difficult to obtain optoelectronic performances in the broad detection range [visible-infrared (IR)] applicable to various fields. Here, by forming a mono-/multi-layer nano-bridge multi-heterojunction structure (more than?>?300 junctions with 25?nm intervals) through the selective layer control of multi-layer MoS₂, a photodetector with ultrasensitive optoelectronic performances in a broad spectral range (photoresponsivity of 2.67?×?10⁶?A/W at ??=?520?nm and 1.65?×?10⁴ A/W at ??=?1064?nm) superior to the previously reported MoS₂-based photodetectors could be successfully fabricated. The nano-bridge multi-heterojunction is believed to be an important device technology that can be applied to broadband light sensing, highly sensitive fluorescence imaging, ultrasensitive biomedical diagnostics, and ultrafast optoelectronic integrated circuits through the formation of a nanoscale serial multi-heterojunction, just by adding a selective layer control process.

SUBMITTER: Kim KS 

PROVIDER: S-EPMC6796006 | biostudies-literature | 2019 Oct

REPOSITORIES: biostudies-literature