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Direct Growth of Two Dimensional Molybdenum Disulfide on Flexible Ceramic Substrate.


ABSTRACT: In this paper, we report the first successful demonstration of the direct growth of high-quality two-dimensional (2D) MoS2 semiconductors on a flexible substrate using a 25-?m-thick Yttria-stabilized zirconia ceramic substrate. Few-layered MoS2 crystals grown at 800 °C showed a uniform crystal size of approximately 50 ?m, which consisted of about 10 MoS2 layers. MoS2 crystals were characterized using energy-dispersive X-ray spectroscopy. Raman spectroscopy was performed to investigate the crystal quality under bending conditions. The Raman mapping revealed a good uniformity with a stable chemical composition of the MoS2 crystals. Our approach offers a simple and effective route to realize various flexible electronics based on MoS2. Our approach can be applied for MoS2 growth and for other 2D materials. Therefore, it offers a new opportunity that allows us to demonstrate high-performance flexible electronic/optoelectronic applications in a less expensive, simpler, and faster manner without sacrificing the intrinsic performance of 2D materials.

SUBMITTER: Zheng Y 

PROVIDER: S-EPMC6835219 | biostudies-literature | 2019 Oct

REPOSITORIES: biostudies-literature

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Direct Growth of Two Dimensional Molybdenum Disulfide on Flexible Ceramic Substrate.

Zheng Yixiong Y   Yuan Chunyan C   Wei Sichen S   Kim Hyun H   Yao Fei F   Seo Jung-Hun JH  

Nanomaterials (Basel, Switzerland) 20191014 10


In this paper, we report the first successful demonstration of the direct growth of high-quality two-dimensional (2D) MoS<sub>2</sub> semiconductors on a flexible substrate using a 25-μm-thick Yttria-stabilized zirconia ceramic substrate. Few-layered MoS<sub>2</sub> crystals grown at 800 °C showed a uniform crystal size of approximately 50 μm, which consisted of about 10 MoS<sub>2</sub> layers. MoS<sub>2</sub> crystals were characterized using energy-dispersive X-ray spectroscopy. Raman spectros  ...[more]

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2024-06-27 | GSE235996 | GEO