Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

On the possibility of a terahertz light emitting diode based on a dressed quantum well.

ABSTRACT: We consider theoretically the realization of a tunable terahertz light emitting diode from a quantum well with dressed electrons placed in a highly doped p-n junction. In the considered system the strong resonant dressing field forms dynamic Stark gaps in the valence and conduction bands and the electric field inside the p-n junction makes the QW asymmetric. It is shown that the electrons transiting through the light induced Stark gaps in the conduction band emit photons with energy directly proportional to the dressing field. This scheme is tunable, compact, and shows a fair efficiency.

SUBMITTER: Mandal S

PROVIDER: S-EPMC6841726 | biostudies-literature | 2019 Nov

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

On the possibility of a terahertz light emitting diode based on a dressed quantum well.

Mandal S S Dini K K Kibis O V OV Liew T C H TCH

Scientific reports 20191108 1

We consider theoretically the realization of a tunable terahertz light emitting diode from a quantum well with dressed electrons placed in a highly doped p-n junction. In the considered system the strong resonant dressing field forms dynamic Stark gaps in the valence and conduction bands and the electric field inside the p-n junction makes the QW asymmetric. It is shown that the electrons transiting through the light induced Stark gaps in the conduction band emit photons with energy directly pro ...[more]

PMID: 31705055

Similar Datasets

Dual-Facets Emissive Quantum-Dot Light-Emitting Diode Based on AZO Electrode.

Project description:We report on a green, dual emissive quantum-dot light-emitting diode (QLED) using alumina (Al)-doped ZnO (AZO) to adjust the band offset between the cathode and QD-emitting layers. The dual emissive QLED structure was designed by enhancing the efficient hole injection/transfer and slowing down the electron injection/transfer from AZO to the QD. The QLEDs presented a maximum luminance of 9450 cd/m2, corresponding to a power efficiency of 15.7 lm/W, a current efficiency of 25.5 cd/A, as well as a turn-on voltage of 2.3 V. It is worth noting that the performance of the dual emissive QLED is comparable to that of a single emissive QLED. Therefore, there is a 1.3-fold enhancement in the performance of the QLED based on the AZO cathode due to the balanced charge injection/transfer.

| S-EPMC8836426 | biostudies-literature

High-Performance Vertical Light-Emitting Transistors Based on ZnO Transistor/Quantum-Dot Light-Emitting Diode Integration and Electron Injection Layer Modification.

Project description:Vertical light-emitting transistors (VLETs) consisting of vertically stacked unipolar transistors and organic light-emitting diodes (OLEDs) have been proposed as a prospective building block for display technologies. In addition to OLEDs, quantum-dot (QD) LEDs (QLEDs) with high brightness and high color purity have also become attractive light-emitting devices for display applications. However, few studies have attempted to integrate QLEDs into VLETs, as this not only involves technical issues such as compatible solution process of QDs and fine patterning of electrodes in multilayer stacked geometries but also requires a high driving current that is demanding on transistor design. Here we show that these integration issues of QLEDs can be addressed by using inorganic transistors with robust processability and high mobility, such as the studied ZnO transistor, which facilitates simple fabrication of QD VLETs (QVLETs) with efficient emission in the patterned channel area, suitable for high-resolution display applications. We perform a detailed optimization of QVLET by modifying ZnO:polyethylenimine nanocomposite as the electron injection layer (EIL) between the integrated ZnO transistor/QLED, and achieve the highest external quantum efficiency of ~3% and uniform emission in the patterned transistor channel. Furthermore, combined with a systematic study of corresponding QLEDs, electron-only diodes, and electroluminescence images, we provide a deeper understanding of the effect of EIL modification on current balance and distribution, and thus on QVLET performance.

| S-EPMC10609005 | biostudies-literature

A quantum light-emitting diode for the standard telecom window around 1,550 nm.

Project description:Single photons and entangled photon pairs are a key resource of many quantum secure communication and quantum computation protocols, and non-Poissonian sources emitting in the low-loss wavelength region around 1,550 nm are essential for the development of fibre-based quantum network infrastructure. However, reaching this wavelength window has been challenging for semiconductor-based quantum light sources. Here we show that quantum dot devices based on indium phosphide are capable of electrically injected single photon emission in this wavelength region. Using the biexciton cascade mechanism, they also produce entangled photons with a fidelity of 87 ± 4%, sufficient for the application of one-way error correction protocols. The material system further allows for entangled photon generation up to an operating temperature of 93 K. Our quantum photon source can be directly integrated with existing long distance quantum communication and cryptography systems, and provides a promising material platform for developing future quantum network hardware.

| S-EPMC5830408 | biostudies-literature

Diarylboron-Based Asymmetric Red-Emitting Ir(III) Complex for Solution-Processed Phosphorescent Organic Light-Emitting Diode with External Quantum Efficiency above 28.

Project description:Organic light-emitting diodes (OLEDs) are one of the most promising technologies for future displays and lighting. Compared with the blue and green OLEDs that have achieved very high efficiencies by using phosphorescent Ir(III) complexes, the red OLEDs still show relatively low efficiencies because of the lack of high-performance red-emitting Ir(III) complexes. Here, three highly efficient asymmetric red-emitting Ir(III) complexes with two different cyclometalating ligands made by incorporating only one electron-deficient triarylboron group into the nitrogen heterocyclic ring are reported. These complexes show enhanced photoluminescence quantum yields up to 0.96 and improved electron transporting capacity. In addition, the asymmetric structure can help to improve the solubility of Ir(III) complexes, which is crucial for fabricating OLEDs using the solution method. The photoluminescent and oxidation-reduction properties of these Ir(III) complexes are investigated both experimentally and theoretically. Most importantly, a solution-processed red OLED achieves extremely high external quantum efficiency, current efficiency, and power efficiency with values of 28.5%, 54.4 cd A-1, and 50.1 lm W-1, respectively, with very low efficiency roll-off. Additionally, the related device has a significantly extended operating lifetime compared with the reference device. These results demonstrate that the asymmetric diarylboron-based Ir(III) complexes have great potential for fabricating high-performance red OLEDs.

| S-EPMC5979779 | biostudies-literature

Effect of Excitation Wavelength on Optical Performances of Quantum-Dot-Converted Light-Emitting Diode.

Project description:Light-emitting diode (LED) combined with quantum dots (QDs) is an important candidate for next-generation high-quality semiconductor devices. However, the effect of the excitation wavelength on their optical performance has not been fully explored. In this study, green and red QDs are applied to LEDs of different excitation wavelengths from 365 to 455 nm. The blue light is recommended for exciting QDs from the perspective of energy utilization. However, QD LEDs excited at 365 nm have unique advantages in eliminating the original peaks from the LED chip. Moreover, the green or red light excited by ultraviolet light has an advantage in colorimetry. Even for the 455 nm LED with the highest QD concentration at 7.0 wt%, the color quality could not compete with the 365 nm LED with the lowest QD concentration at 0.2 wt%. A 117.5% (NTSC1953) color gamut could be obtained by the 365 nm-excited RGB system, which is 32.6% higher than by the 455 nm-excited solution, and this can help expand the color gamut of LED devices. Consequently, this study provides an understanding of the properties of QD-converted LEDs under different wavelength excitations, and offers a general guide to selecting a pumping source for QDs.

| S-EPMC6723292 | biostudies-literature

Quantum-dot light-emitting diode with ultrathin Au electrode embedded in solution-processed phosphomolybdic acid.

Project description:We proposed to exploit phosphomolybdic acid (PMA) as a cost-efficient MoO x source for combined spin-coating/sputtering/spin-coating deposition of a MoO x /Au/MoO x (MAM) composite electrode. The bottom PMA layer provides perfect wetting conditions for ultrathin Au film sputtering and prevents the formation of gold islands on the glass surface, while the top PMA layer helps to reduce light reflection. By optimizing the thickness of ultrathin Au films and PMA layers, we achieved maximum transmittance of 79% at 550 nm and a sheet resistance of only 22 Ω sq-1 which is comparable to the resistance of ITO substrates (20 Ω sq-1). MAM multilayer was explored both as a transparent electrode and as a hole injection layer (HIL) to eliminate ITO and PEDOT:PSS from solution-processed quantum-dot light-emitting diodes (QLEDs). The fabricated MAM-based QLED shows a peak external quantum efficiency (EQE) of 2.7% and maximum brightness of 12 000 cd m-2 at 7 V. By performing bending tests of the polyethylene (PET) substrate coated with MAM electrode, we demonstrate that it is also a promising candidate for flexible transparent optoelectronics.

| S-EPMC9062623 | biostudies-literature

Light-Emitting Diode Photobiomodulation After Cerebral Ischemia.

Project description:Photobiomodulation (PBM) therapy is a promising therapeutic approach for several pathologies, including stroke. The biological effects of PBM for the treatment of cerebral ischemia have previously been explored as a neuroprotective strategy using different light sources, wavelengths, and incident light powers. However, the capability of PBM as a novel alternative therapy to stimulate the recovery of the injured neuronal tissue after ischemic stroke has been poorly explored. The aim of this study was to investigate the low-level light irradiation therapy by using Light Emitting Diodes (LEDs) as potential therapeutic strategy for stroke. The LED photobiomodulation (continuous wave, 830 nm, 0.2-0.6 J/cm2) was firstly evaluated at different energy densities in C17.2 immortalized mouse neural progenitor cell lines, in order to observe if this treatment had any effect on cells, in terms of proliferation and viability. Then, the PBM-LED effect (continuous wave, 830 nm, 0.28 J/cm2 at brain cortex) on long-term recovery (12 weeks) was analyzed in ischemic animal model by means lesion reduction, behavioral deficits, and functional magnetic resonance imaging (fMRI). Analysis of cellular proliferation after PBM was significantly increased (1 mW) in all different exposure times used; however, this effect could not be replicated in vivo experimental conditions, as PBM did not show an infarct reduction or functional recovery. Despite the promising therapeutic effect described for PBM, further preclinical studies are necessary to optimize the therapeutic window of this novel therapy, in terms of the mechanism associated to neurorecovery and to reduce the risk of failure in futures clinical trials.

| S-EPMC6713875 | biostudies-literature

Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films.

Project description:We propose and demonstrate both flexible and stretchable blue light-emitting diodes based on core/shell InGaN/GaN quantum well microwires embedded in polydimethylsiloxane membranes with strain-insensitive transparent electrodes involving single-walled carbon nanotubes. InGaN/GaN core-shell microwires were grown by metal-organic vapor phase epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films can stand up to 20% stretching while maintaining efficient operation. Membrane-based LEDs show less than 15% degradation of electroluminescence intensity after 20 cycles of stretching thus opening an avenue for highly deformable inorganic devices.

| S-EPMC8230151 | biostudies-literature

Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate.

Project description:Growing III-V semiconductor materials on Si substrates for opto-electronic applications is challenging because their high lattice mismatch and different thermal expansion coefficients cause the epitaxial layers to have low quality. Here we report the growth of a high-quality AlN template on a micro-circle-patterned Si substrate by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques. Then, we fabricated and characterized a deep-ultraviolet light-emitting diode (UV-LED) device using this AlN/patterned Si. By using standard lithography and inductively coupled plasma etching, the Si substrate was prepared with very high pattern density and was made deep enough to grow a thick AlN template with high crystal quality and very few threading dislocations, allowing for further re-growth of the deep UV-LED device. And by combining a transparent p-AlGaN contact layer, an electron blocking layer and using this high quality AlN template: a deep UV-LED device fabricated and showed a strong single sharp electroluminescence (EL) peak at 325?nm and achieved an external quantum efficiency (EQE) of about 0.03%, for a deep UV-LED grown on Si substrate.

| S-EPMC5610239 | biostudies-literature

Red Organic Light-Emitting Diode with External Quantum Efficiency beyond 20% Based on a Novel Thermally Activated Delayed Fluorescence Emitter.

Project description:A novel thermally activated delayed fluorescence (TADF) emitter 12,15-di(10H-phenoxazin-10-yl)dibenzo[a,c]dipyrido[3,2-h:2',3'-j]phenazine (DPXZ-BPPZ) is developed for a highly efficient red organic light-emitting diode (OLED). With rigid and planar constituent groups and evident steric hindrance between electron-donor (D) and electron-acceptor (A) segments, DPXZ-BPPZ realizes extremely high rigidity to suppress the internal conversion process. Meanwhile, the highly twisted structure between D and A segments will also lead to an extremely small singlet-triplet energy split to DPXZ-BPPZ. Therefore, DPXZ-BPPZ successfully realizes an efficient fluorescent radiation transition and reverse intersystem crossing process, and possesses an extremely high photoluminescence quantum efficiency of 97.1 ± 1.1% under oxygen-free conditions. The OLED based on DPXZ-BPPZ shows red emission with a peak at 612 nm and a Commission Internationale de L'Eclairage (CIE) coordinate of (0.60, 0.40), and it achieves high maximum forward-viewing efficiencies of 20.1 ± 0.2% (external quantum efficiency), 30.2 ± 0.6 cd A-1 (current efficiency), and 30.9 ± 1.3 lm W-1 (power efficiency). The prepared OLED has the best performance among the reported red TADF OLEDs. These results prove that DPXZ-BPPZ is an ideal candidate for red TADF emitters, and the designing approach is valuable for highly efficient red TADF emitters.

| S-EPMC6145404 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data