Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit.

ABSTRACT: Two-dimensional heterostructures combined with vertical geometries are candidates to probe and utilize the physical properties of atomically-thin materials. The vertical configuration enables a unique form of hot-carrier spectroscopy as well as atomic-scale devices. Here, we present the room-temperature evolution of heteroepitaxial perovskite hot-electron transistors using a SrRuO₃ base down to the monolayer limit (?4?Å). As a fundamental electronic probe, we observe an abrupt transition in the hot-electron mean free path as a function of base thickness, coinciding with the thickness-dependent resistive transition. As a path towards devices, we demonstrate the integrated synthesis of perovskite one-dimensional electrical edge contacts using water-soluble and growth-compatible Sr₃Al₂O₆ hard masks. Edge-contacted monolayer-base transistors exhibit on/off ratios reaching ?10⁸, complete electrostatic screening by the base manifesting pure hot-electron injection, and excellent scaling of the output current density with device dimensions. These results open new avenues for incorporating emergent phenomena at oxide interfaces and in heterostructures.

SUBMITTER: Kim BSY 

PROVIDER: S-EPMC6874601 | biostudies-literature | 2019 Nov

REPOSITORIES: biostudies-literature