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Single Photon Randomness based on a Defect Center in Diamond.

ABSTRACT: The prototype of a quantum random number generator is a single photon which impinges onto a beam splitter and is then detected by single photon detectors at one of the two output paths. Prior to detection, the photon is in a quantum mechanical superposition state of the two possible outcomes with -ideally- equal amplitudes until its position is determined by measurement. When the two output modes are observed by a single photon detector, the generated clicks can be interpreted as ones and zeros - and a raw random bit stream is obtained. Here we implement such a random bit generator based on single photons from a defect center in diamond. We investigate the single photon emission of the defect center by an anti-bunching measurement. This certifies the "quantumness" of the supplied photonic input state, while the random "decision" is still based on the vacuum fluctuations at the open port of the beam-splitter. Technical limitations, such as intensity fluctuations, mechanical drift, and bias are discussed. A number of ways to suppress such unwanted effects, and an a priori entropy estimation are presented. The single photon nature allows for a characterization of the non-classicality of the source, and allows to determine a background fraction. Due to the NV-center's superior stability and optical properties, we can operate the generator under ambient conditions around the clock. We present a true 24/7 operation of the implemented random bit generator.

SUBMITTER: Chen X

PROVIDER: S-EPMC6895230 | biostudies-literature | 2019 Dec

REPOSITORIES: biostudies-literature

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Single Photon Randomness based on a Defect Center in Diamond.

Chen Xing X Greiner Johannes N JN Wrachtrup Jörg J Gerhardt Ilja I

Scientific reports 20191205 1

The prototype of a quantum random number generator is a single photon which impinges onto a beam splitter and is then detected by single photon detectors at one of the two output paths. Prior to detection, the photon is in a quantum mechanical superposition state of the two possible outcomes with -ideally- equal amplitudes until its position is determined by measurement. When the two output modes are observed by a single photon detector, the generated clicks can be interpreted as ones and zeros ...[more]

PMID: 31804519

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Project description:Single-photon defect emitters (SPEs), especially those with magnetically and optically addressable spin states, in technologically mature wide bandgap semiconductors are attractive for realizing integrated platforms for quantum applications. Broadening of the zero phonon line (ZPL) caused by dephasing in solid state SPEs limits the indistinguishability of the emitted photons. Dephasing also limits the use of defect states in quantum information processing, sensing, and metrology. In most defect emitters, such as those in SiC and diamond, interaction with low-energy acoustic phonons determines the temperature dependence of the dephasing rate and the resulting broadening of the ZPL with the temperature obeys a power law. GaN hosts bright and stable single-photon emitters in the 600-700 nm wavelength range with strong ZPLs even at room temperature. In this work, we study the temperature dependence of the ZPL spectra of GaN SPEs integrated with solid immersion lenses with the goal of understanding the relevant dephasing mechanisms. At temperatures below ~ 50 K, the ZPL lineshape is found to be Gaussian and the ZPL linewidth is temperature independent and dominated by spectral diffusion. Above ~ 50 K, the linewidth increases monotonically with the temperature and the lineshape evolves into a Lorentzian. Quite remarkably, the temperature dependence of the linewidth does not follow a power law. We propose a model in which dephasing caused by absorption/emission of optical phonons in an elastic Raman process determines the temperature dependence of the lineshape and the linewidth. Our model explains the temperature dependence of the ZPL linewidth and lineshape in the entire 10-270 K temperature range explored in this work. The ~ 19 meV optical phonon energy extracted by fitting the model to the data matches remarkably well the ~ 18 meV zone center energy of the lowest optical phonon band ([Formula: see text]) in GaN. Our work sheds light on the mechanisms responsible for linewidth broadening in GaN SPEs. Since a low energy optical phonon band ([Formula: see text]) is a feature of most group III-V nitrides with a wurtzite crystal structure, including hBN and AlN, we expect our proposed mechanism to play an important role in defect emitters in these materials as well.

Project description:BackgroundAldosterone (Ald) is a crucial factor in maintaining electrolyte and water homeostasis. Defect in either its synthesis or function causes salt wasting (SW) manifestation. This disease group is rare, while most reported cases are sporadic. This study aimed to obtain an overview of the etiology and clinical picture of patients with the above condition and report our rare cases.MethodsA combination of retrospective review and case studies was conducted at the Pediatric Endocrine unit of The First Affiliated Hospital Sun Yat Sen University from September 1989 to June 2020.ResultsA total of 187 patients with SW were enrolled, of which 90.4% (n = 169) were diagnosed with congenital adrenal hyperplasia (CAH). SW type 21-hydroxylase deficiency accounted for 98.8% (n = 167) of CAH diagnosis, while 1.2% (n = 2) was of lipoid CAH. Non-CAH comprised 9.6% (n = 18) of the total patients whose etiologies included SF-1 gene mutation (n = 1), X-linked adrenal hypoplasia congenita (n = 9), aldosterone synthase deficiency (ASD, n = 4), and pseudo-hypoaldosteronism type 1 (PHA1, n = 1). Etiologies were not identified in three patients. All of patients with ASD and PHA1 exhibited SW syndrome in their early neonatal period. DNA sequencing showed mutations of CYP11B2 for P1-P4 and NR3C2 for P5. P1 and P2 were sibling brothers affected by compound heterozygous mutations of c.1121G > A (p.R374Q) and c.1486delC p.(L496fs); likewise, P4 was identified with compound heterozygous mutations of c.1200 + 1G > A and c.240-1 G > T; meanwhile P3 demonstrated c.1303G > A p.(G435S) homozygous mutation in CYP11B2 gene. Lastly, P5 showed c.1768 C > T p.(R590*) heterozygous mutation in the NR3C2 gene.ConclusionEtiology of infant with aldosterone defect was mostly congenital. Renal and adrenal imaging are recommended to exclude renal causes. If clinical picture is suggestive, normal plasma Ald in early infancy cannot rule out aldosterone insufficiency.

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Single Photon Randomness based on a Defect Center in Diamond.

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Single Photon Randomness based on a Defect Center in Diamond.

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