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Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures.


ABSTRACT: In addition to being grown on industry-standard orientation, vertical [100] oriented nanowires present novel families of facets and related cross-sectional shapes. These nanowires are engineered to achieve a number of facet combinations and cross-sectional shapes, by varying their growth parameters within ranges that facilitate vertical growth. In situ post-growth annealing technique is used to realise other combinations that are unattainable solely using growth parameters. Two examples of possible novel radial heterostructures grown on these vertical [100] oriented nanowire facets are presented, demonstrating their potential in future applications.

SUBMITTER: Fonseka HA 

PROVIDER: S-EPMC6937364 | biostudies-literature | 2019 Dec

REPOSITORIES: biostudies-literature

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Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures.

Fonseka H Aruni HA   Caroff Philippe P   Guo Yanan Y   Sanchez Ana M AM   Tan Hark Hoe HH   Jagadish Chennupati C  

Nanoscale research letters 20191230 1


In addition to being grown on industry-standard orientation, vertical [100] oriented nanowires present novel families of facets and related cross-sectional shapes. These nanowires are engineered to achieve a number of facet combinations and cross-sectional shapes, by varying their growth parameters within ranges that facilitate vertical growth. In situ post-growth annealing technique is used to realise other combinations that are unattainable solely using growth parameters. Two examples of possi  ...[more]

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