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Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C.

ABSTRACT: III-V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III-Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g., 156.6 °C for indium), previous experiments required a minimum growth temperature of 500 °C, thus being incompatible with many application-specific substrates. Here, we demonstrate low-temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 °C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO)-coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III-Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics.

SUBMITTER: Hettick M

PROVIDER: S-EPMC6969534 | biostudies-literature | 2020 Jan

REPOSITORIES: biostudies-literature

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Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C.

Hettick Mark M Li Hao H Lien Der-Hsien DH Yeh Matthew M Yang Tzu-Yi TY Amani Matin M Gupta Niharika N Chrzan Daryl C DC Chueh Yu-Lun YL Javey Ali A

Proceedings of the National Academy of Sciences of the United States of America 20191231 2

III-V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III-Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP gro ...[more]

PMID: 31892540

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Dataset Information

Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C.

Publications

Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C.

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