Impact of Spin-Orbit Torque on Spin-Transfer Torque Switching in Magnetic Tunnel Junctions.

ABSTRACT: The paper presents our simulated results showing the substantial improvement of both switching speed and energy consumption in a perpendicular magnetic tunnel junction (p-MTJ), a core unit of Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM), by the help of additional Spin-Orbit-Torque (SOT) write pulse current (WP_SOT). An STT-SOT hybrid torque module for OOMMF simulation is implemented to investigate the switching behavior of a 20 nm cell in the p-MTJ. We found that the assistance of WP_SOT to STT write pulse current (WP_STT) have a huge influence on the switching behavior of the free layer in the p-MTJ. For example, we could dramatically reduce the switching time (t_SW) by 80% and thereby reduce the write energy over 70% as compared to

SUBMITTER: Pathak S 

PROVIDER: S-EPMC7029010 | biostudies-literature | 2020 Feb

REPOSITORIES: biostudies-literature