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A kinetic-inductance-based superconducting memory element with shunting and sub-nanosecond write times.

ABSTRACT: We present a kinetic-inductance-based superconducting memory element with non-destructive readout, femtojoule read and write energies, both read and write shunts, which is writeable with pulses shorter than 400 ps. The element utilizes both a high-kinetic-inductance layer made from tungsten silicide as well as a low-kinetic-inductance layer made from niobium. By using tungsten silicide-which has a long (20 ns) thermal time constant-and measuring bit error rates from 10 MHz to 1 GHz, we were able to verify that the thin-film elements could be operated at a data rate at least as fast as the material thermal time constant with a bit error ratio less than 10-6. We also analyze the margins of the device, and outline the characteristics by which a more efficient device may be designed.

SUBMITTER: McCaughan AN

PROVIDER: S-EPMC7047614 | biostudies-literature | 2018

REPOSITORIES: biostudies-literature

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A kinetic-inductance-based superconducting memory element with shunting and sub-nanosecond write times.

McCaughan Adam N AN Toomey Emily E Schneider Michael M Berggren Karl K KK Nam Sae Woo SW

Superconductor science & technology 20180101 1

We present a kinetic-inductance-based superconducting memory element with non-destructive readout, femtojoule read and write energies, both read and write shunts, which is writeable with pulses shorter than 400 ps. The element utilizes both a high-kinetic-inductance layer made from tungsten silicide as well as a low-kinetic-inductance layer made from niobium. By using tungsten silicide-which has a long (20 ns) thermal time constant-and measuring bit error rates from 10 MHz to 1 GHz, we were able ...[more]

PMID: 32116414

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