Browse
Submit Data
Databases
API
Help

Dataset Information

6 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

A caloritronics-based Mott neuristor.

ABSTRACT: Machine learning imitates the basic features of biological neural networks at a software level. A strong effort is currently being made to mimic neurons and synapses with hardware components, an approach known as neuromorphic computing. While recent advances in resistive switching have provided a path to emulate synapses at the 10?nm scale, a scalable neuron analogue is yet to be found. Here, we show how heat transfer can be utilized to mimic neuron functionalities in Mott nanodevices. We use the Joule heating created by current spikes to trigger the insulator-to-metal transition in a biased VO2 nanogap. We show that thermal dynamics allow the implementation of the basic neuron functionalities: activity, leaky integrate-and-fire, volatility and rate coding. This approach could enable neuromorphic hardware to take full advantage of the rapid advances in memristive synapses, allowing for much denser and complex neural networks.

SUBMITTER: Del Valle J

PROVIDER: S-EPMC7062821 | biostudies-literature | 2020 Mar

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

A caloritronics-based Mott neuristor.

Del Valle Javier J Salev Pavel P Kalcheim Yoav Y Schuller Ivan K IK

Scientific reports 20200309 1

Machine learning imitates the basic features of biological neural networks at a software level. A strong effort is currently being made to mimic neurons and synapses with hardware components, an approach known as neuromorphic computing. While recent advances in resistive switching have provided a path to emulate synapses at the 10 nm scale, a scalable neuron analogue is yet to be found. Here, we show how heat transfer can be utilized to mimic neuron functionalities in Mott nanodevices. We use th ...[more]

PMID: 32152331

Similar Datasets

An artificial spiking afferent nerve based on Mott memristors for neurorobotics.

Project description:Neuromorphic computing based on spikes offers great potential in highly efficient computing paradigms. Recently, several hardware implementations of spiking neural networks based on traditional complementary metal-oxide semiconductor technology or memristors have been developed. However, an interface (called an afferent nerve in biology) with the environment, which converts the analog signal from sensors into spikes in spiking neural networks, is yet to be demonstrated. Here we propose and experimentally demonstrate an artificial spiking afferent nerve based on highly reliable NbOx Mott memristors for the first time. The spiking frequency of the afferent nerve is proportional to the stimuli intensity before encountering noxiously high stimuli, and then starts to reduce the spiking frequency at an inflection point. Using this afferent nerve, we further build a power-free spiking mechanoreceptor system with a passive piezoelectric device as the tactile sensor. The experimental results indicate that our afferent nerve is promising for constructing self-aware neurorobotics in the future.

| S-EPMC6940364 | biostudies-literature

Mycobacterium intracellulare MOTT-02

Project description:Mycobacterium intracellulare MOTT-02 Genome sequencing

| PRJNA82153 | ENA

Stabilizing the false vacuum: Mott skyrmions.

Project description:Topological excitations keep fascinating physicists since many decades. While individual vortices and solitons emerge and have been observed in many areas of physics, their most intriguing higher dimensional topological relatives, skyrmions (smooth, topologically stable textures) and magnetic monopoles emerging almost necessarily in any grand unified theory and responsible for charge quantization remained mostly elusive. Here we propose that loading a three-component nematic superfluid such as (23)Na into a deep optical lattice and thereby creating an insulating core, one can create topologically stable skyrmion textures. The skyrmion's extreme stability and its compact geometry enable one to investigate the skyrmion's structure, and the interplay of topology and excitations in detail. In particular, the superfluid's excitation spectrum as well as the quantum numbers are demonstrated to change dramatically due to the skyrmion, and reflect the presence of a trapped monopole, as imposed by the skyrmion's topology.

| S-EPMC4291555 | biostudies-literature

Weyl Mott Insulator.

Project description:Relativistic Weyl fermion (WF) often appears in the band structure of three dimensional magnetic materials and acts as a source or sink of the Berry curvature, i.e., the (anti-)monopole. It has been believed that the WFs are stable due to their topological indices except when two Weyl fermions of opposite chiralities annihilate pairwise. Here, we theoretically show for a model including the electron-electron interaction that the Mott gap opens for each WF without violating the topological stability, leading to a topological Mott insulator dubbed Weyl Mott insulator (WMI). This WMI is characterized by several novel features such as (i) energy gaps in the angle-resolved photo-emission spectroscopy (ARPES) and the optical conductivity, (ii) the nonvanishing Hall conductance, and (iii) the Fermi arc on the surface with the penetration depth diverging as approaching to the momentum at which the Weyl point is projected. Experimental detection of the WMI by distinguishing from conventional Mott insulators is discussed with possible relevance to pyrochlore iridates.

| S-EPMC4731769 | biostudies-other

Mycobacterium paraintracellulare strain:MOTT-64

Project description:Mycobacterium paraintracellulare strain:MOTT-64 Genome sequencing

| PRJNA82155 | ENA

Selective area doping for Mott neuromorphic electronics.

Project description:The cointegration of artificial neuronal and synaptic devices with homotypic materials and structures can greatly simplify the fabrication of neuromorphic hardware. We demonstrate experimental realization of vanadium dioxide (VO2) artificial neurons and synapses on the same substrate through selective area carrier doping. By locally configuring pairs of catalytic and inert electrodes that enable nanoscale control over carrier density, volatility or nonvolatility can be appropriately assigned to each two-terminal Mott memory device per lithographic design, and both neuron- and synapse-like devices are successfully integrated on a single chip. Feedforward excitation and inhibition neural motifs are demonstrated at hardware level, followed by simulation of network-level handwritten digit and fashion product recognition tasks with experimental characteristics. Spatially selective electron doping opens up previously unidentified avenues for integration of emerging correlated semiconductors in electronic device technologies.

| S-EPMC10022892 | biostudies-literature

Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor.

Project description:The intrinsic stochasticity of the memristor can be used to generate true random numbers, essential for non-decryptable hardware-based security devices. Here, we propose a novel and advanced method to generate true random numbers utilizing the stochastic oscillation behavior of a NbOx mott memristor, exhibiting self-clocking, fast and variation tolerant characteristics. The random number generation rate of the device can be at least 40 kb s-1, which is the fastest record compared with previous volatile memristor-based TRNG devices. Also, its dimensionless operating principle provides high tolerance against both ambient temperature variation and device-to-device variation, enabling robust security hardware applicable in harsh environments.

| S-EPMC8131590 | biostudies-literature

Non-thermal resistive switching in Mott insulator nanowires.

Project description:Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. Using nanowires of two archetypal Mott insulators-VO2 and V2O3 we unequivocally show that a purely non-thermal electrical IMT can occur in both materials. The mechanism behind this effect is identified as field-assisted carrier generation leading to a doping driven IMT. This effect can be controlled by similar means in both VO2 and V2O3, suggesting that the proposed mechanism is generally applicable to Mott insulators. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state-of-the-art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.

| S-EPMC7293290 | biostudies-literature

A Mott insulator continuously connected to iron pnictide superconductors.

Project description:Iron-based superconductivity develops near an antiferromagnetic order and out of a bad-metal normal state, which has been interpreted as originating from a proximate Mott transition. Whether an actual Mott insulator can be realized in the phase diagram of the iron pnictides remains an open question. Here we use transport, transmission electron microscopy, X-ray absorption spectroscopy, resonant inelastic X-ray scattering and neutron scattering to demonstrate that NaFe1-xCuxAs near x?0.5 exhibits real space Fe and Cu ordering, and are antiferromagnetic insulators with the insulating behaviour persisting above the Néel temperature, indicative of a Mott insulator. On decreasing x from 0.5, the antiferromagnetic-ordered moment continuously decreases, yielding to superconductivity ?x=0.05. Our discovery of a Mott-insulating state in NaFe1-xCuxAs thus makes it the only known Fe-based material, in which superconductivity can be smoothly connected to the Mott-insulating state, highlighting the important role of electron correlations in the high-Tc superconductivity.

| S-EPMC5187431 | biostudies-literature

Interfacial charge-transfer Mott state in iridate-nickelate superlattices.

Project description:We investigate [Formula: see text]/[Formula: see text] superlattices in which we observe a full electron transfer at the interface from Ir to Ni, triggering a massive structural and electronic reconstruction. Through experimental characterization and first-principles calculations, we determine that a large crystal field splitting from the distorted interfacial [Formula: see text] octahedra surprisingly dominates over the spin-orbit coupling and together with the Hund's coupling results in the high-spin (S = 1) configurations on both the Ir and Ni sites. This demonstrates the power of interfacial charge transfer in coupling lattice, charge, orbital, and spin degrees of freedom, opening fresh avenues of investigation of quantum states in oxide superlattices.

| S-EPMC6778181 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data