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Investigation of C-terminal domain of SARS nucleocapsid protein-Duplex DNA interaction using transistors and binding-site models.


ABSTRACT: AlGaN/GaN high electron mobility transistors (HEMTs) were used to sense the binding between double stranded DNA (dsDNA) and the severe acute respiratory syndrome coronavirus (SARS-CoV) nucleocapsid protein (N protein). The sensing signals were the drain current change of the HEMTs induced by the protein-dsDNA binding. Binding-site models using surface coverage ratios were utilized to analyze the signals from the HEMT-based sensors to extract the dissociation constants and predict the number of binding sites. Two dissociation constants, K D1 = 0.0955 nM, K D2 = 51.23 nM, were obtained by fitting the experimental results into the two-binding-site model. The result shows that this technique is more competitive than isotope-labeling electrophoretic mobility shift assay (EMSA). We demonstrated that AlGaN/GaN HEMTs were highly potential in constructing a semiconductor-based-sensor binding assay to extract the dissociation constants of nucleotide-protein interaction.

SUBMITTER: Hsu YR 

PROVIDER: S-EPMC7126644 | biostudies-literature | 2014 Mar

REPOSITORIES: biostudies-literature

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Investigation of C-terminal domain of SARS nucleocapsid protein-Duplex DNA interaction using transistors and binding-site models.

Hsu You-Ren YR   Kang Yen-Wen YW   Fang Jung-Ying JY   Lee Geng-Yen GY   Chyi Jen-Inn JI   Chang Chung-Ke CK   Huang Chih-Cheng CC   Hsu Chen-Pin CP   Huang Tai-Huang TH   Huang Yu-Fen YF   Sun Yuh-Chang YC   Hsu Chia-Hsien CH   Chen Chih-Chen CC   Li Sheng-Shian SS   Yeh J Andrew JA   Yao Da-Jeng DJ   Ren Fan F   Wang Yu-Lin YL  

Sensors and actuators. B, Chemical 20131201


AlGaN/GaN high electron mobility transistors (HEMTs) were used to sense the binding between double stranded DNA (dsDNA) and the severe acute respiratory syndrome coronavirus (SARS-CoV) nucleocapsid protein (N protein). The sensing signals were the drain current change of the HEMTs induced by the protein-dsDNA binding. Binding-site models using surface coverage ratios were utilized to analyze the signals from the HEMT-based sensors to extract the dissociation constants and predict the number of b  ...[more]

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