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Semiconductor-nanoantenna-assisted solar absorber for ultra-broadband light trapping.

ABSTRACT: Light trapping is an important performance of ultra-thin solar cells because it cannot only increase the optical absorption in the photoactive region but it also allows for the efficient absorption with very little materials. Semiconductor-nanoantenna has the ability to enhance light trapping and raise the transfer efficiency of solar energy. In this work, we present a solar absorber based on the gallium arsenide (GaAs) nanoantennas. Near-perfect light absorption (above 90%) is achieved in the wavelength which ranges from 468 to 2870?nm, showing an ultra-broadband and near-unity light trapping for the sun's radiation. A high short-circuit current density up to 61.947?mA/cm2 is obtained. Moreover, the solar absorber is with good structural stability and high temperature tolerance. These offer new perspectives for achieving ultra-compact efficient photovoltaic cells and thermal emitters.

SUBMITTER: Li Y

PROVIDER: S-EPMC7142205 | biostudies-literature | 2020 Apr

REPOSITORIES: biostudies-literature

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Semiconductor-nanoantenna-assisted solar absorber for ultra-broadband light trapping.

Li Yuyin Y Liu Zhengqi Z Pan Pingping P Liu Xiaoshan X Fu Guolan G Liu Zhongmin Z Luo Haimei H Liu Guiqiang G

Nanoscale research letters 20200408 1

Light trapping is an important performance of ultra-thin solar cells because it cannot only increase the optical absorption in the photoactive region but it also allows for the efficient absorption with very little materials. Semiconductor-nanoantenna has the ability to enhance light trapping and raise the transfer efficiency of solar energy. In this work, we present a solar absorber based on the gallium arsenide (GaAs) nanoantennas. Near-perfect light absorption (above 90%) is achieved in the w ...[more]

PMID: 32270307

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