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Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors.

ABSTRACT: Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives.

SUBMITTER: Li Z

PROVIDER: S-EPMC7142779 | biostudies-literature | 2020 Mar

REPOSITORIES: biostudies-literature

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Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors.

Li Ziyuan Z Allen Jeffery J Allen Monica M Tan Hark Hoe HH Jagadish Chennupati C Fu Lan L

Materials (Basel, Switzerland) 20200319 6

Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), ...[more]

PMID: 32204482

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