Exploring an Approach toward the Intrinsic Limits of GaN Electronics.
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ABSTRACT:
SUBMITTER: Jiang S
PROVIDER: S-EPMC7146752 | biostudies-literature | 2020 Mar
REPOSITORIES: biostudies-literature
Publications
Exploring an Approach toward the Intrinsic Limits of GaN Electronics.
Jiang Sheng S Cai Yuefei Y Feng Peng P Shen Shuoheng S Zhao Xuanming X Fletcher Peter P Esendag Volkan V Lee Kean-Boon KB Wang Tao T
ACS applied materials & interfaces 20200305 11
To fully exploit the advantages of GaN for electronic devices, a critical electric field that approaches its theoretical value (3 MV/cm) is desirable but has not yet been achieved. It is necessary to explore a new approach toward the intrinsic limits of GaN electronics from the perspective of epitaxial growth. By using a novel two-dimensional growth mode benefiting from our high-temperature AlN buffer technology, which is different from the classic two-step growth approach, our high-electron-mob ...[more]
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