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Deciphering atomistic mechanisms of the gas-solid interfacial reaction during alloy oxidation.


ABSTRACT: Gas-solid interfacial reaction is critical to many technological applications from heterogeneous catalysis to stress corrosion cracking. A prominent question that remains unclear is how gas and solid interact beyond chemisorption to form a stable interphase for bridging subsequent gas-solid reactions. Here, we report real-time atomic-scale observations of Ni-Al alloy oxidation reaction from initial surface adsorption to interfacial reaction into the bulk. We found distinct atomistic mechanisms for oxide growth in O2 and H2O vapor, featuring a "step-edge" mechanism with severe interfacial strain in O2, and a "subsurface" one in H2O. Ab initio density functional theory simulations rationalize the H2O dissociation to favor the formation of a disordered oxide, which promotes ion diffusion to the oxide-metal interface and leads to an eased interfacial strain, therefore enhancing inward oxidation. Our findings depict a complete pathway for the Ni-Al surface oxidation reaction and delineate the delicate coupling of chemomechanical effect on gas-solid interactions.

SUBMITTER: Luo L 

PROVIDER: S-EPMC7182408 | biostudies-literature | 2020 Apr

REPOSITORIES: biostudies-literature

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Deciphering atomistic mechanisms of the gas-solid interfacial reaction during alloy oxidation.

Luo Langli L   Li Liang L   Schreiber Daniel K DK   He Yang Y   Baer Donald R DR   Bruemmer Stephen M SM   Wang Chongmin C  

Science advances 20200424 17


Gas-solid interfacial reaction is critical to many technological applications from heterogeneous catalysis to stress corrosion cracking. A prominent question that remains unclear is how gas and solid interact beyond chemisorption to form a stable interphase for bridging subsequent gas-solid reactions. Here, we report real-time atomic-scale observations of Ni-Al alloy oxidation reaction from initial surface adsorption to interfacial reaction into the bulk. We found distinct atomistic mechanisms f  ...[more]

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