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Ferromagnetic Order at Room Temperature in Monolayer WSe2 Semiconductor via Vanadium Dopant.


ABSTRACT: Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition are reported. Ferromagnetic order is manifested using magnetic force microscopy up to 360 K, while retaining high on/off current ratio of ?105 at 0.1% V-doping concentration. The V-substitution to W sites keeps a V-V separation distance of 5 nm without V-V aggregation, scrutinized by high-resolution scanning transmission electron microscopy. More importantly, the ferromagnetic order is clearly modulated by applying a back-gate bias. The findings open new opportunities for using 2D transition metal dichalcogenides for future spintronics.

SUBMITTER: Yun SJ 

PROVIDER: S-EPMC7201245 | biostudies-literature | 2020 May

REPOSITORIES: biostudies-literature

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Ferromagnetic Order at Room Temperature in Monolayer WSe<sub>2</sub> Semiconductor via Vanadium Dopant.

Yun Seok Joon SJ   Duong Dinh Loc DL   Ha Doan Manh DM   Singh Kirandeep K   Phan Thanh Luan TL   Choi Wooseon W   Kim Young-Min YM   Lee Young Hee YH  

Advanced science (Weinheim, Baden-Wurttemberg, Germany) 20200311 9


Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe<sub>2</sub> monolayer synthesized by chemical vapor deposition are reported. Ferromagnetic order is manifested using magnetic force microscopy up to 360 K, while retaining high on/off current  ...[more]

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