Dataset Information

Vapor-Deposited Cs₂AgBiCl₆ Double Perovskite Films toward Highly Selective and Stable Ultraviolet Photodetector.

ABSTRACT: Double perovskites have shown great potentials in addressing the toxicity and instability issues of lead halide perovskites toward practical applications. However, fabrication of high-quality double perovskite thin films has remained challenging. Here, sequential vapor deposition is used to fabricate high-quality Cs₂AgBiCl₆ perovskite films with balanced stoichiometry, superior morphology, and highly oriented crystallinity, with an indirect bandgap of 2.41 eV. Using a diode structure, self-powered Cs₂AgBiCl₆ ultraviolet (UV) photodetectors are demonstrated with high selectivity centered at 370 nm, with low dark current density (?10^-7 mA cm^-2), high photoresponsivity (?10 mA W^-1), and detectivity (?10¹² Jones). Its detectivity is among the highest in all double-perovskite-based photodetectors reported to date and surpassing the performance of other perovskite photodetectors as well as metal oxide in the UV range. The devices also show excellent environmental and irradiation stability comparable to state-of-the-art UV detectors. The findings help pave the way toward application of double perovskites in optoelectronic devices.

SUBMITTER: Wang M

PROVIDER: S-EPMC7284202 | biostudies-literature | 2020 Jun

REPOSITORIES: biostudies-literature

ACCESS DATA

Publications

Vapor-Deposited Cs2AgBiCl6 Double Perovskite Films toward Highly Selective and Stable Ultraviolet Photodetector.

Wang Ming M Zeng Peng P Wang Zenghui Z Liu Mingzhen M

Advanced science (Weinheim, Baden-Wurttemberg, Germany) 20200422 11

Double perovskites have shown great potentials in addressing the toxicity and instability issues of lead halide perovskites toward practical applications. However, fabrication of high-quality double perovskite thin films has remained challenging. Here, sequential vapor deposition is used to fabricate high-quality Cs2AgBiCl6 perovskite films with balanced stoichiometry, superior morphology, and highly oriented crystallinity, with an indirect bandgap of 2.41 eV. Using a diode ...[more]

PMID: 32537411

Similar Datasets

Project description:Atomic-layer-deposited alumina (ALD Al2O3) can be utilized for passivation, structural, and functional purposes in electronics. In all cases, the deposited film is usually expected to maintain chemical stability over the lifetime of the device or during processing. However, as-deposited ALD Al2O3 is typically amorphous with poor resistance to chemical attack by aggressive solutions employed in electronics manufacturing. Therefore, such films may not be suitable for further processing as solvent treatments could weaken the protective barrier properties of the film or dissolved material could contaminate the solvent baths, which can cause cross-contamination of a production line used to manufacture different products. On the contrary, heat-treated, crystalline ALD Al2O3 has shown resistance to deterioration in solutions, such as standard clean (SC) 1 and 2. In this study, ALD Al2O3 was deposited from four different precursor combinations and subsequently annealed either at 600, 800, or 1000 °C for 1 h. Crystalline Al2O3 was achieved after the 800 and 1000 °C heat treatments. The crystalline films showed apparent stability in SC-1 and HF solutions. However, ellipsometry and electron microscopy showed that a prolonged exposure (60 min) to SC-1 and HF had induced a decrease in the refractive index and nanocracks in the films annealed at 800 °C. The degradation mechanism of the unstable crystalline film and the microstructure of the film, fully stable in SC-1 and with minor reaction with HF, were studied with transmission electron microscopy. Although both crystallized films had the same alumina transition phase, the film annealed at 800 °C in N2, with a less developed microstructure such as embedded amorphous regions and an uneven interfacial reaction layer, deteriorates at the amorphous regions and at the substrate-film interface. On the contrary, the stable film annealed at 1000 °C in N2 had considerably less embedded amorphous regions and a uniform Al-O-Si interfacial layer.

Dataset Information

Vapor-Deposited Cs₂AgBiCl₆ Double Perovskite Films toward Highly Selective and Stable Ultraviolet Photodetector.

Publications

Vapor-Deposited Cs<sub>2</sub>AgBiCl<sub>6</sub> Double Perovskite Films toward Highly Selective and Stable Ultraviolet Photodetector.

Similar Datasets

OmicsDI is part of the ELIXIR infrastructure

Tweets