Direct Transformation of Crystalline MoO3 into Few-Layers MoS2.
Ontology highlight
ABSTRACT:
SUBMITTER: Carrascoso F
PROVIDER: S-EPMC7287652 | biostudies-literature | 2020 May
REPOSITORIES: biostudies-literature
Publications
Direct Transformation of Crystalline MoO<sub>3</sub> into Few-Layers MoS<sub>2</sub>.
Carrascoso Felix F Sánchez-Santolino Gabriel G Hsu Chun-Wei CW Nemes Norbert M NM Torres-Pardo Almudena A Gant Patricia P Mompeán Federico J FJ Kalantar-Zadeh Kourosh K Alonso José A JA García-Hernández Mar M Frisenda Riccardo R Castellanos-Gomez Andres A
Materials (Basel, Switzerland) 20200515 10
We fabricated large-area atomically thin MoS<sub>2</sub> layers through the direct transformation of crystalline molybdenum trioxide (MoO<sub>3</sub>) by sulfurization at relatively low temperatures. The obtained MoS<sub>2</sub> sheets are polycrystalline (~10-20 nm single-crystal domain size) with areas of up to 300 × 300 µm<sup>2</sup>, 2-4 layers in thickness and show a marked p-type behavior. The synthesized films are characterized by a combination of complementary techniques: Raman spectros ...[more]
Similar Datasets
Project description:The structure and the role of the interfacial water in mediating the interactions of extended hydrophobic surfaces are not well understood. Two-dimensional materials provide a variety of large and atomically flat hydrophobic surfaces to facilitate our understanding of hydrophobic interactions. The angstrom resolution capabilities of three-dimensional AFM are exploited to image the interfacial water organization on graphene, few-layer MoS2 and few-layer WSe2. Those interfaces are characterized by the existence of a 2 nm thick region above the solid surface where the liquid density oscillates. The distances between adjacent layers for graphene, few-layer MoS2 and WSe2 are ~0.50 nm. This value is larger than the one predicted and measured for water density oscillations (~0.30 nm). The experiments indicate that on extended hydrophobic surfaces water molecules are expelled from the vicinity of the surface and replaced by several molecular-size hydrophobic layers.
| S-EPMC6565678 | biostudies-other
Project description:Edge structures are low-dimensional defects unavoidable in layered materials of the transition metal dichalcogenides (TMD) family. Among the various types of such structures, the armchair (AC) and zigzag (ZZ) edge types are the most common. It has been predicted that the presence of intrinsic strain localized along these edges structures can have direct implications for the customization of their electronic properties. However, pinning down the relation between local structure and electronic properties at these edges is challenging. Here, we quantify the local strain field that arises at the edges of MoS2 flakes by combining aberration-corrected transmission electron microscopy (TEM) with the geometrical-phase analysis (GPA) method. We also provide further insight on the possible effects of such edge strain on the resulting electronic behavior by means of electron energy loss spectroscopy (EELS) measurements. Our results reveal that the two-dominant edge structures, ZZ and AC, induce the formation of different amounts of localized strain fields. We also show that by varying the free edge curvature from concave to convex, compressive strain turns into tensile strain. These results pave the way toward the customization of edge structures in MoS2, which can be used to engineer the properties of layered materials and thus contribute to the optimization of the next generation of atomic-scale electronic devices built upon them.
| S-EPMC5695858 | biostudies-literature
Project description:We report a simple and mass-scalable approach for thin MoS2 films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS2 target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700?°C in a sulfur and argon environment. The analysis confirmed the growth of continuous bilayer to few-layer MoS2 film. The mobility value of ~29?cm(2)/Vs and current on/off ratio on the order of ~10(4) were obtained for bilayer MoS2. The mobility increased up to ~173-181?cm(2)/Vs, respectively, for few-layer MoS2. The mobility of our bilayer MoS2 FETs is larger than any previously reported values of single to bilayer MoS2 grown on SiO2/Si substrate with a SiO2 gate oxide. Moreover, our few-layer MoS2 FETs exhibited the highest mobility value ever reported for any MoS2 FETs with a SiO2 gate oxide. It is presumed that the high mobility behavior of our film could be attributed to low charged impurities of our film and dielectric screening effect by an interfacial MoOxSiy layer. The combined preparation route of RF sputtering and post-deposition annealing process opens up the novel possibility of mass and batch production of MoS2 film.
| S-EPMC4974610 | biostudies-literature
Project description:We report a combined experimental and theoretical study of the growth of sub-monolayer amounts of silicon (Si) on molybdenum disulfide (MoS2). At room temperature and low deposition rates we have found compelling evidence that the deposited Si atoms intercalate between the MoS2 layers. Our evidence relies on several experimental observations: (1) Upon the deposition of Si on pristine MoS2 the morphology of the surface transforms from a smooth surface to a hill-and-valley surface. The lattice constant of the hill-and-valley structure amounts to 3.16 Å, which is exactly the lattice constant of pristine MoS2. (2) The transitions from hills to valleys are not abrupt, as one would expect for epitaxial islands growing on-top of a substrate, but very gradual. (3) I(V) scanning tunneling spectroscopy spectra recorded at the hills and valleys reveal no noteworthy differences. (4) Spatial maps of dI/dz reveal that the surface exhibits a uniform work function and a lattice constant of 3.16 Å. (5) X-ray photo-electron spectroscopy measurements reveal that sputtering of the MoS2/Si substrate does not lead to a decrease, but an increase of the relative Si signal. Based on these experimental observations we have to conclude that deposited Si atoms do not reside on the MoS2 surface, but rather intercalate between the MoS2 layers. Our conclusion that Si intercalates upon the deposition on MoS2 is at variance with the interpretation by Chiappe et al. (Adv. Mater.2014, 26, 2096-2101) that silicon forms a highly strained epitaxial layer on MoS2. Finally, density functional theory calculations indicate that silicene clusters encapsulated by MoS2 are stable.
| S-EPMC5629401 | biostudies-other
Project description:An animal's hard tissue is mainly composed of crystalline calcium phosphate. In vitro, small changes in the reaction conditions affect the species of calcium phosphate formed, whereas, in vivo, distinct types of crystalline calcium phosphate are formed in a well-controlled spatiotemporal-dependent manner. A variety of proteins are involved in hard-tissue formation; however, the mechanisms by which they regulate crystal growth are not yet fully understood. Clarification of these mechanisms will not only lead to the development of new therapeutic regimens but will also provide guidance for the application of biomineralization in bionanotechnology. Here, we focused on the peptide motifs present in dentin matrix protein 1 (DMP1), which was previously shown to enhance hydroxylapatite (HAP) formation when immobilized on a glass substrate. We synthesized a set of artificial proteins composed of combinatorial arrangements of these motifs and successfully obtained clones that accelerated formation of HAP without immobilization. Time-resolved static light-scattering analyses revealed that, in the presence of the protein, amorphous calcium phosphate (ACP) particles increased their fractal dimension and molecular mass without increasing their gyration radii during a short period before precipitation. The protein thus facilitated reorganization of the internal structure of amorphous particles into ordered crystalline states, i.e., the direct transformation of ACP to HAP, thereby acting as a nucleus for precipitation of crystalline calcium phosphate. Without the protein, the fractal dimension, molecular mass, and gyration radii of ACP particles increased concurrently, indicating heterogeneous growth transformation.
| S-EPMC2575226 | biostudies-literature
Project description:Graphene and 2D materials have been exploited in a growing number of applications and the quality of the deposited layer has been found to be a critical issue for the functionality of the developed devices. Particularly, Chemical Vapor Deposition (CVD) of high quality graphene should be preserved without defects also in the subsequent processes of transferring and patterning. In this work, a lift-off assisted patterning process of Few Layer Graphene (FLG) has been developed to obtain a significant simplification of the whole transferring method and a conformal growth on micrometre size features. The process is based on the lift-off of the catalyst seed layer prior to the FLG deposition. Starting from a SiO2 finished Silicon substrate, a photolithographic step has been carried out to define the micro patterns, then an evaporation of Pt thin film on Al2O3 adhesion layer has been performed. Subsequently, the Pt/Al2O3 lift-off step has been attained using a dimethyl sulfoxide (DMSO) bath. The FLG was grown directly on the patterned Pt seed layer by Chemical Vapor Deposition (CVD). Raman spectroscopy was applied on the patterned area in order to investigate the quality of the obtained graphene. Following the novel lift-off assisted patterning technique a minimization of the de-wetting phenomenon for temperatures up to 1000 °C was achieved and micropatterns, down to 10 µm, were easily covered with a high quality FLG.
| S-EPMC6631601 | biostudies-literature
Project description:Nanocrystalline molybdenum oxide (?-MoO3) thin films with iso-oriented crystalline layers were synthesised by the anodisation of Mo foils. Upon band-gap excitation using light illumination, ?-MoO3 generates excited electrons for reductive reactions and stores some of the excited electrons in its layered crystalline structure via alkali cation intercalation. These stored electrons can be subsequently discharged from ?-MoO3 to allow reductive reactions to continue to occur under non-illuminated conditions. The modulation of water concentrations in the organic/aqueous anodisation electrolytes readily produces ?-MoO3 crystals with high degree of (kk0) crystallographic orientation. Moreover, these (kk0)-oriented MoO3 crystals exhibit well-developed {hk0} and {0k0} crystal facets. In this paper, we show the benefits of producing ?-MoO3 thin films with defined crystal facets and an iso-oriented layered structure for in situ storing of excited charges. ?-MoO3 crystals with dominant (kk0) planes can achieve fast charging and a strong balance between charge release for immediate exploitation under illuminated conditions and charge storage for subsequent utilisation in dark. In comparison, ?-MoO3 crystals with dominant (0k0) planes show a preference for excited charge storage.
| S-EPMC4262818 | biostudies-other
Project description:Combining MoS2 monolayers to form multilayers allows to access new functionalities. Deterministic assembly of large area van der Waals structures requires concrete indicators of successful interlayer coupling in bilayers grown by chemical vapor deposition. In this work, we examine the correlation between the stacking order and the interlayer coupling of valence states in both as-grown MoS2 homobilayer samples and in artificially stacked bilayers from monolayers, all grown by chemical vapor deposition. We show that hole delocalization over the bilayer is only allowed in 2H stacking and results in strong interlayer exciton absorption and also in a larger A-B exciton separation as compared to 3R bilayers. Comparing 2H and 3R reflectivity spectra allows to extract an interlayer coupling energy of about t??=?49?meV. Beyond DFT calculations including excitonic effects confirm signatures of efficient interlayer coupling for 2H stacking in agreement with our experiments.
| S-EPMC7220905 | biostudies-literature
Project description:Two dimensional (2D) materials with a monolayer of atoms represent an ultimate control of material dimension in the vertical direction. Molybdenum sulfide (MoS2) monolayers, with a direct bandgap of 1.8?eV, offer an unprecedented prospect of miniaturizing semiconductor science and technology down to a truly atomic scale. Recent studies have indeed demonstrated the promise of 2D MoS2 in fields including field effect transistors, low power switches, optoelectronics, and spintronics. However, device development with 2D MoS2 has been delayed by the lack of capabilities to produce large-area, uniform, and high-quality MoS2 monolayers. Here we present a self-limiting approach that can grow high quality monolayer and few-layer MoS2 films over an area of centimeters with unprecedented uniformity and controllability. This approach is compatible with the standard fabrication process in semiconductor industry. It paves the way for the development of practical devices with 2D MoS2 and opens up new avenues for fundamental research.
| S-EPMC3659320 | biostudies-literature
Project description:Monolayer molybdenum disulphide (MoS2) has attracted much attention, due to its attractive properties, such as two-dimensional properties, direct bandgap, valley-selective circular dichroism, and valley Hall effect. However, some of its fundamental physical parameters, e.g. refractive index, have not been studied in detail because of measurement difficulties. In this work, we have synthesized highly crystalline monolayer MoS2 on SiO2/Si substrates via chemical vapor deposition (CVD) method and devised a method to measure their optical contrast spectra. Using these contrast spectra, we extracted the complex refractive index spectrum of monolayer MoS2 in the wavelength range of 400 nm to 750 nm. We have analyzed the pronounced difference between the obtained complex refractive index spectrum and that of bulk MoS2. The method presented here is effective for two-dimensional materials of small size. Furthermore, we have calculated the color contour plots of the contrast as a function of both SiO2 thickness and incident light wavelength for monolayer MoS2 using the obtained refractive index spectrum. These plots are useful for both fundamental study and device application.
| S-EPMC4326697 | biostudies-literature