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Nonpolar (1120) GaN Metal-Semiconductor-Metal Photodetectors with Superior Performance on Silicon.

ABSTRACT: This article reports a nonpolar GaN metal-semiconductor-metal (MSM) photodetector (PD) with an ultrahigh responsivity and an ultrafast response speed in the ultraviolet spectral region, which was fabricated on nonpolar (112?0) GaN stripe arrays with a major improvement in crystal quality grown on patterned (110) silicon substrates by means of using our two-step processes. Our nonpolar GaN MSM-PD exhibits a responsivity of 695.3 A/W at 1 V bias and 12628.3 A/W at 5 V bias, both under 360 nm ultraviolet illumination, which are more than 20 times higher and 4 orders of magnitude higher compared to the current state-of-the-art photodetector, respectively. The nonpolar GaN MSM-PD displays a rise time and a fall time of 66 and 43 ?s, respectively, which are 3 orders of magnitude faster compared to the current state-of-the-art photodetector.

SUBMITTER: Cai Y

PROVIDER: S-EPMC7304820 | biostudies-literature | 2020 Jun

REPOSITORIES: biostudies-literature

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Nonpolar (112̅0) GaN Metal-Semiconductor-Metal Photodetectors with Superior Performance on Silicon.

Cai Yuefei Y Shen Shuoheng S Zhu Chenqi C Zhao Xuanming X Bai Jie J Wang Tao T

ACS applied materials & interfaces 20200518 22

This article reports a nonpolar GaN metal-semiconductor-metal (MSM) photodetector (PD) with an ultrahigh responsivity and an ultrafast response speed in the ultraviolet spectral region, which was fabricated on nonpolar (112̅0) GaN stripe arrays with a major improvement in crystal quality grown on patterned (110) silicon substrates by means of using our two-step processes. Our nonpolar GaN MSM-PD exhibits a responsivity of 695.3 A/W at 1 V bias and 12628.3 A/W at 5 V bias, both under 360 nm ultra ...[more]

PMID: 32374591

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