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Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers.

ABSTRACT: Electrostatic gating of two-dimensional (2D) materials with ionic liquids (ILs), leading to the accumulation of high surface charge carrier densities, has been often exploited in 2D devices. However, the intrinsic liquid nature of ILs, their sensitivity to humidity, and the stress induced in frozen liquids inhibit ILs from constituting an ideal platform for electrostatic gating. Here we report a lithium-ion solid electrolyte substrate, demonstrating its application in high-performance back-gated n-type MoS₂ and p-type WSe₂ transistors with sub-threshold values approaching the ideal limit of 60 mV/dec and complementary inverter amplifier gain of 34, the highest among comparable amplifiers. Remarkably, these outstanding values were obtained under 1 V power supply. Microscopic studies of the transistor channel using microwave impedance microscopy reveal a homogeneous channel formation, indicative of a smooth interface between the TMD and underlying electrolytic substrate. These results establish lithium-ion substrates as a promising alternative to ILs for advanced thin-film devices.

SUBMITTER: Alam MH

PROVIDER: S-EPMC7314772 | biostudies-literature | 2020 Jun

REPOSITORIES: biostudies-literature

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Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers.

Alam Md Hasibul MH Xu Zifan Z Chowdhury Sayema S Jiang Zhanzhi Z Taneja Deepyanti D Banerjee Sanjay K SK Lai Keji K Braga Maria Helena MH Akinwande Deji D

Nature communications 20200624 1

Electrostatic gating of two-dimensional (2D) materials with ionic liquids (ILs), leading to the accumulation of high surface charge carrier densities, has been often exploited in 2D devices. However, the intrinsic liquid nature of ILs, their sensitivity to humidity, and the stress induced in frozen liquids inhibit ILs from constituting an ideal platform for electrostatic gating. Here we report a lithium-ion solid electrolyte substrate, demonstrating its application in high-performance back-gated ...[more]

PMID: 32581271

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Project description:Two-dimensional materials, in particular transition metal dichalcogenides (TMDs), have attracted a nascent interest in the implementation of memristive architectures. In addition to being functionally similar to synapses, their nanoscale footprint promises to achieve the high density of a biological neural network in the context of neuromorphic computing. However, in order to advance from the current exploratory phase and reach reliable and sound memristive performances, an understanding of the underlying physical mechanisms in TMD memristors seems imperative. Despite the distinctive transport medium inherent to multilayer TMDs, the memristance is routinely attributed to defects or metal atoms present in the system, with their precise contribution remaining elusive. Specifically, the role of intrinsic point defects in the formation of conductive channels, although shown for monolayer TMDs, is not conclusively studied for multilayer samples. In this work, using density functional theory (DFT) and nonequilibrium Green's function (NEGF) formalism, a systematic study is carried out to analyze the impact that defects and metal atoms produce on the out-of-plane conductivity of multilayer TMDs. MoS2, a representative of the 2H structural configuration, and PtS2, a representative of the 1T structure, the most common crystal arrangements among TMDs, are used for this analysis. It is found that the intrinsic sulfur vacancies, which are the dominant defects present in both TMDs, appear to be insufficient in causing resistive switching on the application of an external bias. The claim that the intrinsic point defects on their own can realize a valence change memory-type device by providing a controllable conductive channel through the van der Waals structure seems, according to our study, improbable. The presence of metallic atoms is demonstrated to be essential to trigger the memristive mechanism, emphasizing the proper choice of a metal electrode as being critical in the fabrication and optimization of memristors using TMDs.

Dataset Information

Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers.

Publications

Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers.

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