Dataset Information

Sapphire Wafer for 226 nm Far UVC Generation with Carbon Nanotube-Based Cold Cathode Electron Beam (C-Beam) Irradiation.

ABSTRACT: Far ultraviolet C (UVC) light sources have the potential for numerous applications ranging from sterilization, purification, sensing, deodorization, surface modification, and so on. In particular, a short wavelength of far UVC is effective at sterilizing viruses and bacteria by minimizing damage to mammalian skin. Recently, many researchers are devoting materials and alternative light sources to overcome low efficiency, small light-emitting area, UV absorption, and complicated manufacturing processes of far UVC generation. Here, the sapphire wafer is evaluated for far UVC light generation using electron beam irradiation with carbon nanotube (CNT) emitters. A CNT-based cold cathode electron beam (C-beam) that emits electrons and accelerated onto ?-Al2O3 of the sapphire wafer was used as an excitation source to demonstrate high-power far UVC light generation. High-efficiency 226 nm far UVC is made with a power conversion efficiency of 0.87% and a light-emitting area of 960 mm2. Far UVC generation depends on the input power and the crystallinity of sapphire wafers.

SUBMITTER: Yoo ST

PROVIDER: S-EPMC7331211 | biostudies-literature | 2020 Jun

REPOSITORIES: biostudies-literature

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Sapphire Wafer for 226 nm Far UVC Generation with Carbon Nanotube-Based Cold Cathode Electron Beam (C-Beam) Irradiation.

Yoo Sung Tae ST Park Kyu Chang KC

ACS omega 20200615 25

Far ultraviolet C (UVC) light sources have the potential for numerous applications ranging from sterilization, purification, sensing, deodorization, surface modification, and so on. In particular, a short wavelength of far UVC is effective at sterilizing viruses and bacteria by minimizing damage to mammalian skin. Recently, many researchers are devoting materials and alternative light sources to overcome low efficiency, small light-emitting area, UV absorption, and complicated manufacturing proc ...[more]

PMID: 32637836

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Project description:BackgroundIn dentistry, instruments, appliances, and body fluids such as saliva or blood are possible sources of infection. Although conventional antiseptic procedures effectively prevent infection, spittoons cannot be sanitized between each treated patient and are usually washed only with running water. However, there is currently no fast and efficient disinfection method that can be implemented between treatments. An optically filtered krypton chloride excimer lamp using ultraviolet light (Far UV-C) in the 200-230 nm wavelength range (innocuous to humans) has been recently used as a virus- and bacteria-inactivating technology. This study aimed to identify the bioburden of a dental spittoon and examine the susceptibility of two oral Streptococcus and two Enterococci to 222-nm Far UV-C by irradiating the spittoon with 222 nm Far UV-C for 5 min before evaluating the disinfection effect.MethodsBacterial analysis and real-time polymerase-chain reaction testing was used to confirm the spittoon's biological contamination. Bacterial susceptibility to a 222-nm Far UV-C was determined with a graded dose irradiation test. After each treatment, the spittoon was irradiated with 222-nm Far UV-C for 5 min, and the disinfecting effect was evaluated. Microbial analysis of the spittoon's surface was performed using the Silva database.ResultsWe found that > 97% of the microbes consisted of six bacterial phyla, whereas no viruses were found. Pseudomonas aeruginosa was frequently detected. The 1-log reduction value of two oral-derived Streptococci and two Enterococci species at 222-nm Far UV-C was 4.5-7.3 mJ/cm2. Exposure of the spittoon to 222-nm Far UV-C at 3.6-13.5 mJ/cm2 significantly decreased bacterial counts (p < 0.001).ConclusionsIrradiation with 222-nm Far UV-C at 3.6-13.5 mJ/cm2 significantly eliminates bacteria in spittoons, even when they are only rinsed with water. Hence, 222-nm Far UV-C irradiation may inhibit the risk of bacterial transmission from droplets in sink surfaces.

Dataset Information

Sapphire Wafer for 226 nm Far UVC Generation with Carbon Nanotube-Based Cold Cathode Electron Beam (C-Beam) Irradiation.

Publications

Sapphire Wafer for 226 nm Far UVC Generation with Carbon Nanotube-Based Cold Cathode Electron Beam (C-Beam) Irradiation.

Similar Datasets

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