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Reduced Energy Barrier for Li+ Transport Across Grain Boundaries with Amorphous Domains in LLZO Thin Films.


ABSTRACT: The high-resistive grain boundaries are the bottleneck for Li+ transport in Li7La3Zr2O12 (LLZO) solid electrolytes. Herein, high-conductive LLZO thin films with cubic phase and amorphous domains between crystalline grains are prepared, via annealing the repetitive LLZO/Li2CO3/Ga2O3 multi-nanolayers at 600?°C for 2?h. The amorphous domains may provide additional vacant sites for Li+, and thus relax the accumulation of Li+ at grain boundaries. The significantly improved ionic conductivity across grain boundaries demonstrates that the high energy barrier for Li+ migration caused by space charge layer is effectively reduced. Benefiting from the Li+ transport paths with low energy barriers, the presented LLZO thin film exhibits a cutting-edge value of ionic conductivity as high as 6.36 × 10-4?S/cm, which is promising for applications in thin film lithium batteries.

SUBMITTER: Zhu Y 

PROVIDER: S-EPMC7382668 | biostudies-literature | 2020 Jul

REPOSITORIES: biostudies-literature

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Reduced Energy Barrier for Li<sup>+</sup> Transport Across Grain Boundaries with Amorphous Domains in LLZO Thin Films.

Zhu Yanlin Y   Wu Shuai S   Pan Yilan Y   Zhang Xiaokun X   Yan Zongkai Z   Xiang Yong Y  

Nanoscale research letters 20200725 1


The high-resistive grain boundaries are the bottleneck for Li<sup>+</sup> transport in Li<sub>7</sub>La<sub>3</sub>Zr<sub>2</sub>O<sub>12</sub> (LLZO) solid electrolytes. Herein, high-conductive LLZO thin films with cubic phase and amorphous domains between crystalline grains are prepared, via annealing the repetitive LLZO/Li<sub>2</sub>CO<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> multi-nanolayers at 600 °C for 2 h. The amorphous domains may provide additional vacant sites for Li<sup>+</sup>, and  ...[more]

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